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A 5-channel driver array IC with a 6 Vpp differential output voltage swing in SiGe bipolar technology is presented. A pair of these arrays is designed to drive a 10-channel Mach-Zehnder modulator (MZM) in a photonic integrated circuit (PIC) of a 10 × 11.3 Gbit/s dense wavelength division multiplexing transmitter. The driver and PIC assembly is optimized for a low cost and a small footprint. Therefore,...
The design and characterization of a robust pulse generator power-on reset circuit, with accurate bandgap based thresholds, brown-out event detection capability and hysteresis, realized in 0.25 µm SiGe BiCMOS technology is presented. The resulting circuit consumes 7.5 µA and occupies 360×440nm2 area. Measured reset pulses longer than 340 µs are generated. The design was simulated with a voltage and...
In this paper, the design methodology and layout considerations of a multiphase Rotary Travelling-Wave Voltage-Controlled Oscillator (RTW-VCO) and a high gain three-stage Power Amplifier (PA) for a phased-array transmitter application are presented. Using a 0.25 µm BiCMOS process, the fabricated VCO gives access to 8 different phases in steps of 45 degrees and it achieves a tuning range of 1 GHz for...
This paper highlights the general trend towards further monolithic integration in power applications by enabling power management and interfacing solutions in advanced CMOS nodes. The need to combine high-density digital circuits, power-management circuits and robust interfaces in a single technology platform requires the development of additional process options on top of baseline CMOS. Examples...
Combining circuit elements and complete circuit descriptions level with the EM predicted performance of electromagnetic techniques that generate electrical models of the component interconnects and the packaging or physical environment around the circuits is an area where the theory of engineering meets the art of engineering. The circuit node “0” for ground is a misnomer at times in simulation and...
For the first time, the high temperature (to 300°C) DC and AC performance of a > 100 GHz fT/fmax SiGe HBTs on thick-film SOI are investigated for their potential use in emerging energy sector, automotive, and aerospace applications. Metrics such as current gain (βF), BVCEO, M-1, fT, fmax are extracted from 24°C to 300°C and compared with a bulk SiGe HBT platform. The results demonstrate that while...
The impact of the HF cleaning step prior to the emitter α-Si deposition on the Horizontal Current Bipolar Transistor (HCBT) electrical characteristics is analyzed A longer HF dip results in a thinner emitter interface oxide implying a smaller emitter resistance (Re), which equals 85Ω for the unit HCBT as compared to 104 Ω for the unit HCBT with a shorter HF dip. The thinner oxide is still sufficiently...
An empirical reliability model is proposed here that is able to predict parameter degradation for a SiGe Hetero-junction Bipolar Transistor (HBT) by scaling stress time laterally producing a universal curve that describes whole time evolution of degradation. The predictability of the degradation pattern is demonstrated in experiments at a forward active mode as well as the reverse Veb stress accounting...
A single-chip solution for short-range F-band radar systems is presented. It is based on a Transmit-Receive (TR) module realized in a 130 nm BiCMOS process, with a fully integrated chain of Gilbert-cell frequency multipliers generating the required F-band carrier for both transmit and receive paths, a differential Single-Pole-Double-Throw (SPDT) switch that relies on novel differential RF Micro-Electro-Mechanical...
This paper presents an integrated Ka-band 2×2 True-Time-Delay (TTD) phased array receiver using a 0.25nm SiGe:C BiCMOS technology. Each phased array receiver channel is able to perform 20.5 ps variable delay as well as 6 dB variable gain. A mixer and buffer are integrated to down-convert the RF signal into a fixed IF1 at 11 GHz. Each receiver channel presents more than 20 dB RF-IF1 conversion gain...
This paper presents a 110–140GHz reconfigurable radar frontend IC with on-chip antenna. The IC contains two switchable input buffers, two frequency multipliers, a PA, an LNA, a SPDT HBT switch and an on-chip antenna, fully integrated in a SiGe technology. The radar sensor is intended for a multistatic radar array where each unit can be configured as Tx or as Rx, providing more flexibility and information...
This invited paper provides an overview of important attributes of a BiCMOS process in designing high-performance mm-wave integrated circuits, and contends, through several design examples, that it is perhaps one of the best process technologies for wireless applications that seek both high level of integration and high performance. In comparative study of BiCMOS performance compared to Silicon CMOS...
Residual levels of stress remaining after device fabrication have been characterized in the base and emitter regions of shallow-trench-isolated complementary npn and pnp transistors on (100) silicon utilizing uniaxial stress measurements. A residual biaxial stress of approximately 160 MPa has been found in the active regions of the npn transistors, whereas negligible residual stress is observed in...
Due to the miniaturization in microelectronics and corresponding steep doping profiles, it is increasingly difficult to obtain reliable results from SIMS measurements. This paper aims at providing a guideline for calculating unknown profile information by means of TCAD simulations using electrical reference data. The corresponding procedure has been applied to both measurements and synthetic TCAD...
A computationally efficient model for static self-heating and thermal coupling in a multi-finger bipolar transistor is proposed. Compared to an existing state-of-the-art model, our model differs only in the implementation strategy keeping the physical basis intact. The formulated model is implemented in Verilog-A without using any voltage controlled voltage sources. Temperature dependence of the thermal...
Profile optimization techniques are investigated for silicon-germanium heterojunction bipolar transistors (SiGe HBTs) intended for inverse-mode (IM) operation. IM device operation, also known as inverse active, involves electrically swapping the emitter and collector terminals and has been shown to improve the radiation tolerance of SiGe HBTs to single event transients (SETs). Multiple profile design...
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