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In this work we present the simulation and experimental results of the “Cross Switch (XS)-Hybrid” built with 3.3kV Si-IGBTs and SiC-MOSFETs. We have analyzed the switching performance, mainly the turn-off behavior of the XS-Hybrid (a parallel arrangement of a Si-IGBT and a SiC-MOSFET) with the aid of Sentaurus TCAD device simulations. We discuss in detail the current sharing mechanism between these...
This paper presents a 0.65-V flipped voltage follower (FVF)-based regulator with an embedded sub-1-V voltage reference. A low-pass filter is employed in the current coupling path to reduce the bias noise and improve the power supply rejection (PSR) at a low-frequency band (<kHz). The chip is fabricated in a 0.18-μm CMOS process and occupies an active area of 0.076 mm2. The proposed FVF regulator...
We have studied the electrical transport characteristics of a GaAs quantum point contact with a triple-gate structure at the front surface. Controlling applied voltage to these three gates and, in addition, backgate voltage to control electron density, a potential shape of the one-dimensional channel can be modified, resulting in the various transport characteristics. When the center gate (CG) voltage...
Novel gate driver ICs for the control of 1200V SiC-JFET and -MOSFET half bridges based on high voltage silicon on insulator (SOI) technology are presented. The driver ICs features an extended gate voltage range of 20V and due to an innovative level shifter concept the output voltage levels for turn-off and turn-on can be changed in a wide voltage range between −20V…0V and 0V…+20V. The two dies of...
This paper presents a technique to control the output voltage of series-parallel (SP) topology inductive power transfer (IPT) system by using only a primary side controller which reduces cost, size, complexity and loss compared to the conventional IPT dual-side controller. The duty cycle of the inverter output voltage is controlled by a controller located in the primary side which keeps the DC output...
This paper presents the modeling and simulation of bidirectional half bridge dc-dc converter by using zero voltage switching technique. According to the development of high power converter for renewable energy system, the new topology of power converter is proposed under normal and abnormal operation. This paper presents the operation of high power high frequency converter under the forward- and reverse-operation...
This paper presents the design of a high-voltage (HV) rail-to-rail error amplifier. This circuit controls the output signal of a low drop-out voltage regulator (LDO) according to the reference voltages and based on stacked standard transistors. The circuit is designed using 65 nm CMOS process technology with a nominal voltage of 2.5 V and is optimized for arbitrary values of supply voltage up to 5...
This paper presents a high-voltage (HV) driver for switching a buck converter. The circuit is based on 3-stacked CMOS using gate control circuits to drive maximum current which indicates minimized on-resistance of the HV-driver thus achieving faster switching. The circuit is designed and fabricated using 65 nm CMOS TSMC process technology with a nominal voltage of 2.5 V and with a supply voltage of...
The design of a low power low drop out voltage regulator with no off-chip capacitor and fast transient responses is presented in this paper. The LDO regulator uses a combination of a low power operational trans-conductance amplifier and comparators to drive the gate of the PMOS pass element. The amplifier ensures stability and accurate setting of the output voltage in addition to power supply rejection...
H-bridge is an important driver device for consumer electronics and industry controls; however, the existed dead-time problem will reduce its performance. In this paper, A PMOS-driven H-bridge using a gate-bias technology is proposed to avoid the dead-time generation. In addition to no dead-time requirement, the proposed PMOS-driven H-bridge also achieves the better driving efficiency and low hardware...
Ferroelectric Field Effect Transistor (FeFET) is a promising nonvolatile device which provides high integration density, fast programming speed, and excellent CMOS compatibility. In general, the non-volatility of FeFET is impacted by its physical structure and there is a trade-off between data retention time and device endurance. To improve the cell endurance, for example, the ferroelectric layer...
Various biosensors are employed for characterization of biochemical molecules. In this paper, we present a new Chemically Modulated biosensor structure based on Silicon on Ferroelectric-Insulator (CM-SOFFET). The body-stack SOFFET device has shown tremendous potential for various Ultra-low-power (ULP) and biosensing applications. The device has the potential to provide high performance multi-Vt design,...
Implantable functional electric stimulation (FES) systems are currently being investigated as treatment for some types of neural dysfunctions. For this purpose, several neural stimulator systems on a chip (SOCs) have been proposed for: deep brain stimulation (DBS), cochlear prosthesis, visual prosthesis (VP), and artificial limbs control. Two major and related issues in FES are the charge balancing...
This paper presents the design of two high-voltage level shifters suitable for a wide range of supply voltages. In view of certain drawbacks identified during the design, implementation, simulation and measurement of a 3-stacked CMOS driver using capacitive feedback level shifters, improved high-voltage level shifters are designed. These circuits are compared with each other in terms of their circuit...
In this paper a new approach of generating the Pulse width modulation (PWM) signals which are to be used in various power electronics application like power converters and inverters is presented. Pulse Width Modulation (PWM) triggers the gate terminals of the power electronic semiconductor devices like thyristors, Insulated-Gate Bipolar Transistors (IGBTS), Metal Oxide Semiconductor Field Effect Transistors...
The conventional dc-dc boost converters are unable to provide high step up voltage gain. The transformer less dc-dc converters are used to achieve high step up voltage gain without an extremely large duty ratio. In this paper, the closed loop control of dual switch converter with passive lossless clamping for high step up voltage gain has been investigated. The improved dual switch converter can achieve...
This paper presents a study of the isolated DC/DC stage of Bi-directional on-board battery charger module (OBCM) for electric vehicle (EV) and plug-in hybrid electric vehicle (PHEV) application. The conventional series resonant converter and secondary-side-switch delay-time control is employed. The delay-time control is used to assist the conventional variable-switching-frequency control of primary...
Switched mode power supply (SMPS) is used in majority of portable devices and plays the central role for energy-efficient power management. Recent developments in digital VLSI allow high performance control implementation with ultrafast recovery and high power density. However, electromagnetic interference (EMI) is a major concern in SMPS, which interferes with nearby devices and input power lines...
One of the challenge of multi-MHz resonant converters is to drive the power FETs efficiently in wide input voltage range, for the reason that the phase angle between the drain-to-source voltage and gate drive voltage of the power FETs varies with the input voltage. The phase angle variation results in high reverse conduction loss and switching loss seriously at high frequency, especially for the eGaN...
This paper proposes a method to achieve maximum power point tracking (MPPT) function by “tricking” inexpensive commercial-off-the-shelf (COTS) current mode control regulators. In the commercial market, there are many such inexpensive regulators, but they are designed for the output voltage control. The proposed method utilizes a voltage signal from an additional external microcontroller to regulate...
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