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Novel gate driver ICs for the control of 1200V SiC-JFET and -MOSFET half bridges based on high voltage silicon on insulator (SOI) technology are presented. The driver ICs features an extended gate voltage range of 20V and due to an innovative level shifter concept the output voltage levels for turn-off and turn-on can be changed in a wide voltage range between −20V…0V and 0V…+20V. The two dies of...
A novel approach for medium power IPMs is presented combining 600V and 1200V IGBT/FWD-inverter modules based on spring contact technology with advanced silicon on insulator (SOI) gate driver ICs with fully integrated VCE-monitoring and negative turn-off gate voltage in a reliable cost effective package with excellent thermal conductivity. For the VCE-monitoring of short circuit events the HV-diode...
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