The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In this paper, we describe highly reliable GaN high electron mobility transistors (HEMTs) for high-power and high-efficiency amplifiers. First, we present the reliability mechanisms and progress on the previously reported GaN HEMTs. Next, we introduce our specific device structure for GaN HEMTs for improving reliability. An n-GaN cap and optimized buffer layer are used to realize high efficiency and...
This work presents the design, development and testing of a phase-leg power module packaged by a novel planar packaging technique for high temperature (250degC) operation. Nano-silver paste is chosen as the die-attach material as well as playing the key functions of electrically connecting the devices' pads. The electrical characteristics of the SiC-based power semiconductors, SiC JFETs and SiC diodes,...
In this paper we compare methods to determine the life-time of AlGaN/GaN HEMTs by accelerated DC life-tests. They all base on monitoring of both, IDSS and IDQ during the life-test, either at room temperature of at the elevated ambient temperature. The goal is to investigate whether interruptions of the life test to measure IDSS at room temperature can be prevented and replaced by screening this parameter...
In this paper, a simple and reliable method to estimate the channel temperature of GaN high-electron mobility transistors (HEMTs) is proposed. The technique is based on electrical measurements of performance-related figures of merit (IDmax and RON) with a synchronized pulsed I -V setup. As our technique involves only electrical measurement, no special design in device geometry is required, and packaged...
The recent discovery of the potential and charge modulation by fluorine ions incorporated in III-nitride heterojunction FETs has opened up numerous new opportunities of realizing desired device performance and fabricating integrated circuits with desirable circuit configurations. The most significant development based on the fluorine plasma ion implantation technology is the demonstration of self-aligned...
Performances of AlGaN/GaN HFETs have much improved recently and very high potential of this heterostructure for high power and high frequency electronic devices has been verified. Application of new device technologies such as field plate, recessed gate, digital pre-distortion circuit and dual field plate was essential to realize such high device performances both at 2 GHz, 5GHz and 26 GHz. However,...
Reliability of the AlGaN/GaN HFETs was investigated by applying a short-time (70 min) off-state stress: the drain voltage was 50 V and the channel was pinched off. Significant decrease of the drain current at the stressing conditions was observed. Simultaneously, a decrease of the gate currents was found. On the other hand, the transconductance and threshold voltage did not changed with the stressing...
The instability of the threshold voltage in SiC power DMOSFETs due to gate-bias stress and ON-state stress is a potential reliability issue, although the effects can be mitigated if the threshold voltage is set with enough positive margin so that no increase in OFF-state leakage occurs. In this case, the primary effect will be to increase the ON-state resistance by about five percent, which should...
This paper reviews the main problems characterizing the past and present of GaN-based HEMT reliability. Some general considerations on the maturity of this technology and published lifetesting extrapolations are followed by a review of physical degradation mechanisms, subdivided between temperature-activated and electrical ones, the latter generally linked with the much-debated ldquocurrent collapserdquo...
AlGaN/GaN HEMTs on various substrates have raised a lot of interest for the application in future high-efficiency base station systems for next generation mobile communication, currently dominated by LDMOS technology. Using GaN technology in a transmitter, infrastructure equipment manufacturers will benefit from major improvements in system performance and flexibility. AlGaN/GaN HEMTs enable innovative...
Highly stable and reliable operation is absolutely required for GaN-based high-efficiency power switching devices and high-power RF AlGaN/GaN HEMTs. For the improvement of operation stability in such devices, in this paper, the surface control technologies will be addressed by introducing an ultrathin-Al-layer process and a multi-mesa-channel structure with relevant technologies.
Silicon-carbide junction field-effect transistors (JFETs) are maturing in performance, reliability, and manufacturability, especially with voltage ratings ranging from 600-1800 V. The vertical channel JFET (VJFET) with extremely low specific on-resistance (< 0.25 Omega-mm2) is now available. In this paper, new results are reported on a two-switch module packaged in a commercially available plastic...
Over the last 3 years under the Wide Band Gap Semiconductor (WBGS) DARPA program, TriQuint and their partners, II-VI, IQE, BAE, MIT, RPI and UTD, have performed multiple multi-structure, multi-wafer, multi-technology reliability experiments and failure analysis studies on its GaN on SiC HEMT technology for X-band applications. This manuscript summarizes the main results of this effort.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.