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We apply a unique three-dimensional (3D) physics-based atomistic simulator to study silicon-rich (SiOx, x<2) resistive switching nonvolatile memory (RRAM) devices. We couple self-consistently a simulation of ion and electron transport to the ‘atomistic’ simulator GARAND and a selfheating model to explore the switching processes in these structures. The simulation model is more advanced than other...
Resistive switching devices and neuromorphic computing systems, while an attractive solution to minimize compute bottlenecks, suffer from sneak-path problem and area inefficient implementations respectively. This has prompted research in developing beyond-CMOS functional blocks that can serve as a compact single device circuit block (selector and oscillator respectively). In this work, we explore...
We present a newly-developed three-dimensional (3D) physical simulator suitable for the study of resistive random-access memory (RRAM) devices. We explore the switching behavior of Si-rich silica (SiOx) RRAM structures, whose operation has been successfully demonstrated experimentally at ambient conditions [1]. The simulator couples self-consistently a simulation of oxygen ion and electron transport...
An array of Circular Transmission Line Model (CTLM) metal contacts was deposited onto the upper surface of the n-SiC/Si chips using laser micromachining as an alternative to standard photolithography technique. Thin epitaxial n-type 3C-SiC/Si chips were used since no current leakage observed in previous studies. Various laser energies were used for the CTLM pattern transfer. Low values of ρc were...
We discovered that Si-doped AlGaN with low AlN molar fraction have been used to realize an external low-resistivity n-layer at room temperature. This Si-doped n-Al0.05Ga0.95N underlying layer is extremely useful for the realization of high-performance nitride-based light emitting diodes. We also confirmed a reduction in the differential resistance of a violet light-emitting diode by using this n-AlGaN.
Base on innovation resistance theory, this research builds the model of factors affecting consumers' resistance in using online travel in Thailand. Through the questionnaires and the SEM methods, empirical analysis results show that functional barriers are even greater sources of resistance to online travel website than psychological barriers. Online experience and independent travel experience have...
In this paper, a systematic test approach is presented for rapid detection of the defects in pre- and post-bond through-silicon vias (TSV). The cylindrical, annular, and coaxial TSVs are studied using the full-wave electromagnetic simulation. The impacts of open and pinhole defects in the pre-bond TSVs can be effectively observed in the Z-parameter variation. Then, a defect detection scheme is developed...
A systematic characterization procedure of Silicon IMPATT (IMPact ionization Avalanche Transit-Time) diode is introduced in this work. DC characterization consists of currentvoltage (I-V) and capacity-voltage (C-V) measurements. RF small signal characterization is performed by the vector network analyzer (VNA). By combining the measured S-parameters of the 30x2 μm2 IMPATT diode and simulated data...
A high cell performance is one of the key drivers to reduce the levelized cost of electricity for PV. Nevertheless, the production costs of a solar cell technology have to be low, to allow a market entry. A both sides-contacted solar cell can potentially fulfill both requirements. In this work we present the latest results of our DOE FPACE project: A both sides-contacted n-type solar cell with a passivated...
Performance reliability and degradation of 190 mono-crystalline PV modules from 9 different manufactures after 16 years in a power plant with fixed tilt configuration under composite climate of India have been evaluated. The dominant failure mode of PV module in the climate zone is found by using a statistical reliability tool, FMECA. Main objective of this study is to do RPN analysis of 25 different...
A selective patterning technique using light-induced anodization (LIA) of a masked metal surface is reported. The method can be used to form metal patterns under masked regions whilst the unmasked regions are anodized to create an anodic metal oxide dielectric layer. The through-wafer current flow in LIA allows the anodization process to be modelled as an array of resistors in series with the solar...
Perovskite solar cells are a candidate for use as space solar cells, and their radiation response is studied here for the first time. Perovskite solar cells are fabricated on a quartz substrate to prevent substrate degradation, which might otherwise affect the evaluation of radiation tolerance of the cells. As a result, superior radiation tolerance of perovskite solar cells is indicated from the comparison...
The electrical properties of n+-Si/n-GaN junctions by room-temperature bonding were investigated. The n+-Si/n-GaN junctions exhibited linear current-voltage characteristics.
The ESD robustness of planar Si and Ge diodes on Silicon-on-Insulator (SOI) optical interposer is studied by using TLP and vfTLP system. Although Ge diodes show a lower failure current, a superior clamping capability with a resistance lowering behavior, which is attributed to the intrinsic material properties of Ge, makes Ge diodes possess a promising potential for ESD protections.
We applied the low-temperature bounding for fabricating base/collector junctions of Si-based bipolar transistor structures. The common-base current gain of fabricated bipolar transistors increased as the ambient temperature was raised up to 165°C, which suggests that the low-temperature bounding might be useful for fabricating high-performance heterojunction devices.
Switching devices such as Silicon Carbide (SiC) MOSFET present significant performance improvement in high frequency switching power converter applications. This paper presents a gate charge profile investigation of a Silicon Carbide MOSFET and gate driver circuit solutions to optimize both switching speed, power losses and EMI requirements. Main technology issues of Silicon carbide MOSFET are presented...
Recent advancement in chip design which made it possible to achieve more functionality in a smaller package means that the silicon die design needs to be compact and multi layered. One particular case which often caused difficulty to failure analysts was the Common Mode Filter (CMF) devices packed in the multi-leads, XDFN package. The device comes with an integrated ESD protection. Differential signaling...
We report a record setting low NMOS contact Rc of 2e−9 Ωcm2 with an all-silicon based solution. The ultra-low contact resistivity of Ti/Si system of 2e−9 Ωcm2 has been demonstrated with Highly Doped Si:P (HD Si:P) EPI layer which is compatible with FinFET S/D structures combined with millisecond laser anneal activation (DSA). Additionally, we show the pathway to further improve contact resistivity...
The lack of high power conversion efficiency in RF passive rectifier circuits at sub-μW power levels with current MOSFET technologies is directly related with the difficulty of the transistors in conducting the required level of current at low voltage values. With a different carrier injection mechanism, the superior electrical characteristics of the Tunnel FET devices at low voltage values (sub-0...
In summary, this work highlights the impact of SMT-induced edge-dislocation positions in nFET device design. Based on experimental results and atomic transport simulation, dislocations with reduced proximity and depth would increase the amount of SFs and TDs which induce high parasitic resistance and high Iboff leakage current together. Trade-off among strained mobility, parasitic resistance and I...
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