The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
La0.7Sr0.3MnO3 (LSMO) suspended bolometers of various geometries have been fabricated using silicon micromachining techniques. Thanks to adequate geometry design and to the operating conditions (temperature and bias current), these uncooled bolometers could be limited by phonon noise and achieve NEP values below 1 pW Hz−1/2 around 300 K.
As the electronic devices miniaturization roadmap trend is pursuing, 3D technologies have also emerged and appeared as one serious option for the next generation of semiconductors industry. The purpose of this paper is to introduce the complete development of fine pitch microbumps and micropillars for chip to wafer interconnections on 300 mm wafers using industrial tools and with already existing...
This invited paper reviews the evolution of silicon carbide power devices from the initial proposal for wide bandgap semiconductors for power electronic applications in 1979 to current commercially available devices. The potential social impact on this technology on energy savings and the environment is briefly discussed.
The paper reports upon the design and characterization of a resistive O2 sensor, which is fully CMOS-compatible and is based on an ultra-low-power Silicon on Insulator (SOI) micro-hotplate membrane. The microsensor employs SrTi0.4Fe0.6O2.8 (STFO60) as sensing layer. Thermo-Gravimetric Analysis (TGA) Energy-Dispersive X-ray Spectroscopy (EDX), X-ray Diffraction (XRD) and Scanning Electron Microscope...
In this work, we study the impact of Si and Al implantation on the current conduction mechanisms and operation of 1T-1R TiN/HfO2/Ti/TiN based ReRAM devices. The pre-forming current and forming voltage evolution clearly reveal different trends as a function of the implanted dose and species. We link our results to the microscopic structure of the material using a first principles approach.
The deterioration of signal integrity (SI) due to the skin effect and dielectric loss has been one of the most serious problems in the printed circuit board (PCB) trace since the clock frequency exceeded several hundred MHz. It is expected that the same problem will occur due to the same causes when the frequency exceeds several GHz in global and very long interconnects in very-large-scale integration...
4H-SiC MOSFET have been fully characterized in the forward conduction over the temperature range −30°C to 150°C. The distinct characteristics of SiC MOSFET and the Si MOSFET counterpart are compared and explained. A physics-based analytical model for SiC MOSFET has been developed by using the MAST language and simulated with SABER. The influences of the geometry (short channel effects), channel mobility,...
Passivating junctions, like hole-collecting p+-polycrystalline silicon/SiOx/crystalline silicon junctions, need a thermal treatment to activate their excellent passivation and contact properties. Aside from surface passivation and from contact resistance between poly-Si and the substrate, the sheet resistance within the poly-Si is another important parameter for solar cell design. We present electrical...
This paper evaluates the SuperJunction MOSFET in cascode configuration with a low-voltage silicon MOSFET. The structure combines the good switching performance provided by the cascode configuration with advantages of the silicon technology as the robustness, the maturity and the low-cost. The objective of this paper is to elucidate and to demonstrate the reduction of switching losses of SuperJunction...
From small voltage regulators to large motor drives, power electronics play a very important role in present day technology. The power electronics market is currently dominated by silicon based devices. However due to inherent limitations of silicon material they are approaching thermal limit in terms of high power and high temperature operation. Performance can only be improved with the development...
Major Depressive Disorder (MDD) is a serious mental disorder that if untreated not only affects physical health but also has a high risk of suicide. While the neurophysiological phenomena that contribute to the formation of Suicidal Ideation (SI) are still ill-defined, clear links between MDD and cardiovascular disease have been reported. The aim of this study is to extract suitable features from...
As a natural result of the continual growth and progress in soft robotics to establish fully compliant bodies primarily made of soft materials using additive manufacturing techniques, there are also increasing efforts towards realizing flexible and stretchable sensors which can seamlessly be embedded in soft robotic devices. In this study, we report on the performance evaluation of two soft strain...
The article disserted the principle of the probe vacillated at testing a large silicon wafer with square four point probe equipment. The article introduces how to obtain the measurement result about the micro area in testing system of square four point probes inclined. Mapping diagram design method based on polar coordinates is introduced. Design principles graphics of 10°indexing angle is analyzed...
The sheet resistance of a silicon wafer with four point probes method is studied based on Labview software. With the help of data acquisition circuit and the Labview software programming, the resistivity of sillicon wafers is tested with the real-time. The system can also be completed for measurement data acquisition and data recordig, and other functions. The actual measurement and verification of...
This paper presents a continuation of an investigation into the behavior of lead magnesium niobate-lead titanate, Pb(Mg0.33Nb0.67)0.65Ti0.35O3) (PMNT) thin film at high frequency through electromagnetic (EM) simulation. The purpose of this paper is to improve the electrical characteristics. The electrical characteristics were analyzed on CPW built on PMNT thin films. In this study, we focus on the...
The understanding of the switching mechanisms in resistive random access memory is of interest as one can use the fundamental mechanisms to better design the memory structure for enhancing both switching and reliability performance. Various analytical methods have been explored to better understand the wear-out and eventual failure mechanisms of RRAM stacks. This includes atomic-scale characterization...
This paper presents characteristics and layout of an integrated charge-sensitive amplifier for the multichannel front-end electronics. The design constraints and requirements are based on the Compressed Baryonic Matter experiment two detector layers: Silicon Tracing System working with silicon strip detectors and the Muon Chamber working with gas detectors. The amplifier is designed for low-power...
A new 60 V rating split gate trench MOSFET fabricated with the state-of-the-art process technology has been investigated and evaluated in the secondary synchronous rectifier board. It shows the best-in-class specific resistance of 10.9 mΩ·mm2 and the figure-of-merit (FOM) of 85 mΩ·nC which is the product of the on-resistance and the gate charge.
This paper discusses the influence of top-electrode (TE) and bottom-electrode (BE) materials on the resistive transition of sputter-deposited TiO2 films. The electronic characteristics of the TiO2 films are elucidated from the physical mechanism of resistive transition.
This work presents a piecewise model to predict electrical waveforms of SuperJunction Cascode Configurations (SJ-CCs) during hard-switching operation. This ultra-fast high-voltage switch is composed of a SuperJunction MOSFET (SJ-FET) in Cascode Configuration (CC) with a Low-Voltage silicon MOSFET (LV-FET). SJ-CCs have been recently proposed as the first solution fully-based on silicon technologies...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.