The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In this paper, a new 1200 V-class ultra-narrow-mesas fin p-body IGBT (U-Fin-P IGBT) is proposed. Different from the previously demonstrated fin p-body IGBT, a much narrower fin (mesa) width (∼ 0.5 μm) is adopted in the U-Fin-P IGBT to further reduce the conduction loss; whereas the difficulty of doing emitter contact lithography on top of the ultranarrow mesa regions is resolved by using a self-aligned...
Device modeling has been essential in discovery of innovative concepts, assessing their value proposition and in guiding the process engineering of devices to continue Moore's Law performance scaling for Metal Oxide Semiconductor Field Effect transistors (MOSFET) [1]. TCAD has traditionally relied on continuum model of transport by solving drift-diffusion (DD) equations and including bandstructures...
In our previous work, we had proposed a distributed storage system which aims to optimize the locations of data blocks on the basis of their access frequency. In order to relocate data blocks at an appropriate node, each node should collect fresh information about storage utilization of other nodes. However, frequent information exchange might become the cause of network congestion. In this paper,...
FinFETs are considered as superior alternative to conventional MOSFETs for short channels. Presence of gate on multiple sides helps in performance enhancement. In this work, we have investigated the impact of various process parameters like gate oxide thickness (Tox), aspect ratio of fin height (Hfin) to fin thickness (Wfin) on the performance of Tapered FinFETs for 20 nm gate length. This FinFET...
Elastomer stamp based micro assembly or micro-transfer printing is a practical method for heterogeneous integration of micro-scale devices onto non-native substrates. In this paper, we evaluate the effect of stamp lifetime on performance and assess the useful lifetime of a stamp, both key metrics for using this technology in a manufacturing environment. We also review the performance of micro transfer-printing...
The emergence and evolution of any package technology is driven by market trends as experienced by the end application. With the maturation of the mobile market, the trends for Smartphone and other mobile devices are more than ever for lower cost. Meanwhile, a higher degree of functionality and performance, thinner profile, and longer battery life are some of the additional market drivers seen in...
A new metric is proposed to solely evaluate the performance gap of digital ring oscillators between silicon and model specifications. It separates the impact of device leakage from the traditional static current versus RO frequency. When using together, these two metrics can identify the sources of silicon gap and guide process improvement in the fab.
Ion implantation technology is widely used in semiconductor manufacturing process. Most of install base for high current implanters use deceleration technology to overcome space charge effect especially important for low energy implants. It is necessary to consider the Energy contamination (EC) effects on devices with thinner gate height. This paper use SRIM simulation and dopant profiles, offline...
In this paper, we develop a comprehensive analytical framework to characterize the performance of device-centric content availability in device-to-device (D2D) networks. Modeling the locations of devices as a variant of Thomas cluster process, we derive the coverage probability of a typical device when its content of interest is available at its kth closest device within the same cluster. Using the...
Piezoelectric micromachined ultrasonic transducer (pMUT) gains increasing interests from researchers. It overcomes the inherent shortcomings of conventional bulk ultrasonic transducers such as acoustic impedance mismatching. In addition, pMUT does not require the extremely large input voltage as capacitive micromachined ultrasonic transducer (cMUT), which is potential to be integrated into portable...
Impact of gate underlap in nanoscale ultrathin body Germanium-on Insulator (Ge-OI) MOS transistor is investigated with the help of well calibrated TCAD simulation. Due to higher permittivity of Ge, MOS device with no underlap shows poor short channel immunity. While increasing underlap length significant improvement in short channel immunity is observed. Due to higher channel resistance reduction...
The DC power delivery system is becoming an appealing research topic and real world solution due to its higher energy efficiency compare with AC delivery system. It has already been applied in data centers, commercial buildings, electrical vehicle charge stations and micro grid systems, etc. Among many new issues that need to be addressed for the DC power delivery system, ultra-fast and accurate protection...
Advances in the Through Silicon Via (TSV) process have placed performance demands on gas delivery including higher levels of speed, precision, accuracy and repeatability of critical reactive gases, all driven by demands for high etch rate, increased uniformity, small scallops and better profile control. MKS pulse gas delivery mass flow controllers (Pulse MFCs) have been developed in order to solve...
FinFETs are the most promising candidates for the future scaling technology beyond the scaling limits of conventional CMOS technology. The scaling of the conventional planar MOSFET has been facing problems such as subthreshold swing, significant DIBL, fluctuations of device characteristics and leakage. These problems can be solved using multi-gate devices. In this work, integration of 3-D non-planar...
As the shrinking of chip size continues, the demand for the improvement of the total lithographic overlay performance in the semiconductor industry become increasingly higher, which has resulted in proportionally higher requirement on the alignment performance. When the semiconductor processes reaches the 1X generation, and when the FinFet device becomes a mainstream technology, the lithographic process...
Today's packaging standard for consumer MEMS sensors are plastic mold packages of the LGA or QFN type. Multiple chips are placed on a substrate or leadframe, electrically connected by wire bonds and protected by overmolding the sensitive devices. While being a flexible and very effective packaging technology it contributes significantly to the overall sensor dimensions in x-, y- and z-direction. The...
Organic based materials and devices for flexible electronics have many disadvantages such as low charge transport, process temperature limitation, and etc. Those limitations, based on material itself, make the flexible electronic device difficult to compete with Si-based hard electronics that have excellent electric properties and much advanced design rule. Thus, as an effort to overcome the known...
The superior material properties such as higher breakdown field, thermal conductivity and wider bandgap make Silicon Carbide (SiC) appropriate for transistor applications. However, there are certain parameters where SiC have yet to achieve required performance levels. SiC have number of polytypes having mature technology. Being one of the SiC polytypes, 3C-SiC has higher mobility and saturation velocity...
We report the design of a new application-specific integrated circuit (ASIC) for use in radio telescope correlators. It supports the construction of correlators for an arbitrarily large number of signals. The ASIC uses an intrinsically low-power architecture along with design techniques and a process that together result in unprecedentedly low power consumption. The design is flexible in that it can...
The structure of a conventional laterally diffused MOSFET (LDMOSFET) build on InGaAs is modified by placing trenches in the epitaxial layer. The gate of the proposed device (LDMOSFET) is placed in a oxide (Al2O3) trench between the source of the structure for creating twice channels in the p-base. Parallel conduction of twice channels leads to increase in drain current, higher transconductance, lower...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.