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We demonstrated an InAsP/InP nanowire laser (diameter ∼100 nm) in telecommunication band on an Si photonic crystal platform. By measuring light-in versus light-out curves, linewidth, emission rate, and photon correlation, lasing oscillation has been unambiguously demonstrated.
Using first principles Density Functional Theory (DFT) calculations, we have studied the structural and lattice vibrational properties of [111]-oriented Si/Ge core-shell nanowires. Our results show that the fundamental atomicity of the underlying lattice is important for an accurate explanation of phonon frequencies. The detailed analysis shows that thermal conductance due to selective phonon modes...
This work reveals the impact of quantum mechanical effects on the device performancce of n-type silicon nanowire transistors (NWT). Here we present results for two Si NWTs with circular and elliptical cross-section. Additionally we designed both devices to have identical cross-section in order to provide fair comparison. Also we extended our discussions by reporting devices with five different gate...
NEMS based sensors open several opportunities for integrated solutions in emerging domains as chemical analysis and life science. With critical dimensions ranging between 10 and 100 nm, those devices can be made at the VLSI scale, possibly co-integrated with CMOS and are well suited for autonomous, highly sensitive or dense sensors. Several applications will be presented, as complex gas portable recognitions...
An open boundary-conditions full-band quantum transport formalism with a plane-wave basis based on empirical pseudopotentials is used to self-consistently simulate transistors in the sub-1 nm technology node, with one-dimensional silicon nanowires, armchair-edge graphene nanoribbons, and zigzag-edge carbon nanotubes as the channel. The electrostatic potential energy and charge density distribution...
Linear and coherent non-linear resonant high resolution laser spectroscopy was used to characterize In0.54Ga0.46N disks in nanowires. Nonlinear optical spectroscopy and PLE reveal narrow excitonic resonances and evidence of coupling between separate excited states.
We fabricate a vertically stacked photodetector device containing silicon nanowire photodetectors formed above a silicon substrate that also contains a photodetector. The substrate photodetector converts light not absorbed by the nanowires to photocurrent.
The particular opto-electronic properties of chemically synthesized colloidal nanoparticles can be promising for functional materials, as those required for high efficient photovoltaic (PV) devices. In particular, appropriately-designed semiconductor colloids (quantum dots, QDs) can potentially allow sub-bandgap current generation in intermediate-band solar cells; while metal nanoparticles (MNPs)...
In this paper, we have investigated the redundancy in array of Memristive-Biosensors and find optimum number for devices to accomplish reliable biodetection. Our results lead less expensive sensor and reduce the low-reproducibility of this memristive method for the detection of rabbit antigen. Several experiments have been performed with 17 memristive biosensors in several conditions. These conditions...
The numerical simulation of the silicon nanowire (SiNW) thinning effect during the low-temperature dry thermal oxidation is carried out. For the simulation the two-dimensional mathematical model of the silicon thermal oxidation were used. It takes into account the dependence of the oxidation rate on mechanical stresses occurring in the structure and silicon dioxide nonlinear viscoelastic behavior...
We demonstrate Si-cap-free SiGe p-channel FinFETs and gate-all-around (GAA) FETs in a replacement metal gate (RMG) process, for Ge contents of 25% and 45%. We show that the performance of these devices is substantially improved by high-pressure (HP) deuterium (D2) anneal, which is ascribed to a 2x reduction in interface trap density (DIT). Furthermore, it is found that (1) TMAH treatment of SiGe prior...
In this work, water, isopropyl alcohol (IPA), and Zonyl fluorosurfactant are applied on PEDOT:PSS to try to improve PEDOT:PSS attachment on Si nanowires (SiNWs) thoroughly. After treatment, only Zonyl fluorosurfactant assisted PEDOT:PSS has thorough coating profiles on SiNWs. However, water and IPA diluted PEDOT:PSS only touch the top portion of SiNWs. Therefore, Zonyl-PEDOT:PSS/SiNW solar cells generate...
Silicon semiconductor microstructures have demonstrated enhancement in different types of electronic devices, however, controlling the doping within all these devices remain a major challenge. This challenge is increased by the lack of direct methods to quantify the dopant distribution depth in the microstructures. In this paper we present a method that allows the direct measurement of phosphorus...
GaAs nanowires (NWs) growth kinetics by Ga-assisted chemical beam epitaxy on Si(111) substrates is studied as a function of the initial Ga catalyst dimensions and growth parameters such as substrate temperature and V/III flux ratio. The preparation method for substrates is optimized in order to obtain a surface oxide with a thickness around 0.5 nm, allowing the decomposition of Ga metalorganic precursor...
There is an expanding interest in finding novel concepts for increasing the efficiency and reduce the cost in solar cell devices. In this regard, semiconductor nanowires (NWs) provide various paths towards both goals. In this work we explore the increased device freedom offered by nanowires for optimizing carrier extraction and light absorption in solar cells.
The process of exciton dissociation in hybrid organic solar cells is studied and the rates of singlet and triplet exciton dissociations in P3HT:SiNW hybrid solar cell are calculated. Possible loss mechanisms during the dissociation process have also been highlighted. Design optimization in flexible P3HT:SiNW hybrid solar cell is performed and a power conversion efficiency of 4.70% is obtained which...
Growth of silicon nanowires by Vapour-Liquid-Solid (VLS) method has been studied in a cold wall Catalytic Chemical Vapour Deposition (Cat-CVD) chamber. It has been found that the instrument can be used in two modes, Hot Wire Chemical Vapour Deposition (HWCVD) and Chemical Vapour Deposition (CVD). These modes are tested with two methods for the preparation of the catalyst nanoparticles, namely thermal...
Patterning of ultra-dense, large-area lines down to 11 nm half-pitch using extreme ultraviolet (EUV) interference lithography with two types of inorganic photoresist is shown. The resist patterns are transferred using plasma etching into silicon (Si) for both types of resist. 14 nm half-pitch silicon nanowires with 1∶1 aspect ratio and square cross-sectional profile using a hafnium oxide based resist...
Semiconductor nanowires and nanostructures have a great potential for Terahertz generation and detection, especially because certain materials properties such as optical absorption, high electron and hole mobility, and short carrier lifetime can be engineered through structural changes and material compositions. In such structures, the variation in geometry and surface charge characteristics can greatly...
Sensitivity of Phosphorus dopant placement to the channel size of highly doped silicon nanowires is studied using a 10-band sp3 d5 s∗ tight-binding approach coupled to self-consistent simulations. Extending the simulation scope to realistically sized nanowires, we observed that uniform doping does not necessarily reduce the channel energy compared to surface-oriented doping when the diameter of a...
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