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Control of stress in porous silicon (PS) through porosity changes was studied using X-ray diffraction rocking curve measurements. The effect of thermal annealing on the stress was also investigated, which showed the ability to achieve compressive or tensile films in a reversible manner. The effect of stress on the resonant frequency of PS microbeams was studied to understand the impact of PS film...
Fundamental and technological issues associated with the development and exploitation of the most advanced infrared and terahertz technologies are discussed. In these classes of detectors both photon and thermal detectors are considered. Special attention is directed to HgCdTe ternary alloys, type II superlattices, barrier detectors, uncooled thermal bolometers, extrinsic detectors (including blocked...
We investigate the ferromagnetic resonance response of palladium-cobalt bi-layer thin films to hydrogen charging at atmospheric pressure. Recently it has been found that hydrogen absorption by a palladium capping layer results in the narrowing and shifting of the ferromagnetic resonance peak of the underlying cobalt layer. This effect was explained as originating from a reduction in the spin pumping...
We report issues associated with the calibration of a biased target ion beam deposition system. Variations in deposition rates and oxygen flow have been observed when depositing individual metal oxide films immediately after films deposited from different targets as compared to depositions following films from the same target.
The charging mechanism of the interface between an AlGaN/GaN based open-gate ion-sensitive field-effect transistor and electrolyte is studied theoretically. Density functional theory calculations are performed to obtain the energy minimum structure of the surface oxide and electrolyte interface. Thermodynamics based relations are employed to obtain the double layer parameters. An analytical model...
The threshold switching characteristics of amorphous NbOx thin films is investigated with particular emphasis on temperature dependence of the switching characteristics. Threshold switching in this material is believed to result from a thermally-induced insulator-metal-transition (IMT) induced along a filamentary path by local Joule heating. Increasing the operating temperature is shown to lead to...
Bi2Se3 nanoribbons and nanowires were synthesized by Au-catalyzed and catalyst-free chemical vapor deposition methods. The growth of Au-catalyzed Bi2Se3 nanoribbons and nanowires is governed by the vapor-solid-solid mechanism, and the nanoribbons grow along <1120> and the nanowires grow along <0001> directions. Catalyst-free grown Bi2Se3 nanoribbons are found to have a growth direction...
Localized deposition of pure platinum nanostructures was achieved using a combination of focused electron beam induced processing (FEBID) of an inorganic platinum precursor and low temperature annealing in water vapour. This technique enables fabrication of Pt nanostructures with high spatial resolution and purity, for applications in nanoelectronics, sensing devices and catalysis.
Electrical contacts between metals and semiconductors are fundamentally important for practical semiconductor devices. This work reports the electrical characterization of nanowire arrays fabricated by a top-down approach, where electron beam lithography (EBL) and a highly anisotropic Cl2/H2/Ar inductively coupled plasma (ICP) reactive ion etching (RIE) is utilised to generate vertical arrays of InP...
As designers of MEMS and bioMEMS strive for increased device performance and are exploring more exotic material systems, which may not be compatible with conventional photolithographic processes; techniques that can circumvent the limitations of conventional fabrication processes can offer new pathways for the creation of high impact devices. Microfluidic processes can provide precision control of...
In this paper, we report results of a study of SiNx films deposited on HgCdTe epitaxial layers. Hydrogenated amorphous SiNx films were deposited by inductively-coupled plasma-enhanced chemical vapour deposition at relatively low substrate temperatures (80°C-100°C). The capacitance-voltage characteristics of SïNJn-Hg0.68Cd0.32Te metal-insulator-semiconductor structures indicated that Si-rich SiNx films...
Electrons in two-dimensional atomic crystals such as few-layer sheets of graphene or transition-metal dichalcogenides carry several internal degrees of freedom: real spin, orbital pseudospin, and valley isospin. The interplay of these enables new approaches to spin-dependent transport effects. In this paper, three recent developments in this area are discussed: the unusual magnetoelectric properties...
This paper presents the results of experimental work on a low temperature through-wafer reactive ion etching (RIE) technique obtained in the course of development of a process that can be used in small sample processing for microelectromechanical systems (MEMS). Low temperature RIE are a crucial step for many dry MEMS fabrication processes, where can be used to fabricate silicon vias, trenches, and...
By combining Finite-Difference-Time-Domain simulations and the detailed-balance model of solar cell, we study how absorption efficiency determines the short circuit current density, Jsc, of single vertical nanowire (NW) solar cells. We find that due to the very high absorption efficiency, vertical NW delivers Jsc that are one order of magnitude higher than planar solar cells.
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