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The sputter-deposited Cu thin film, coated with a thinner gold layer, was prepared into the butterfly pattern with alternating zones beween Cu thin film and Si. The eutectic SnPb solder balls with different sizes were reflowed on the butterfly pattern. As a result, the liquid solder would be selectively retained on the Au/Cu film zones. At the same time, under the energy minimization control, the...
Ag sintering technology has become a potential candidate to replace solder technology due to its well known high melting point (961°C), excellent electrical and thermal conductivity. In this paper, we report the evaluation of die attach using Ag sinter technology on substrates with different top metallizations (Au, Ag and Cu). Low pressure nano-Ag paste (Alpha Argomax) was chosen for this evaluation...
Glass (7740) and silicon (100) wafer are bonded using gold as the bonding medium and annealed to enhance the bonding strength at temperature about 450°C. The voids in the bonding interface are the main reason to cause the poor reliability of bonding, and scanning electron microscope (SEM) photos reveal that there are a number of voids in the craters on the surface of silicon wafer after bonding. It...
The synthesis of single-crystal silicon (Si) nanowires by a metal-catalyst-free vapor-liquid-solid (VLS) process was studied. Silicon nanowires have been successfully synthesized by simple thermal treatment without any metal catalyst. For cases without metal catalysts, Si nanowires are grown by VLS processes assisted by sulfur. It is thought that single-crystal Si nanowires are grown by a VLS process...
There is an increasing interest in reducing the size of semiconductor devices to sub 20 nm scale for technical requirements, like low power consumption and high switching speed. Electronic devices based on nano Schottky junctions have the potential to address these issues. This is because nano metal-semiconductor contacts are expected to have narrower barriers compared to conventional Schottky diodes...
Scientific articles are formed of citations which need further explored. Previous work deals with the case that citations in a paragraph talk about co-occurring terms. This paper discusses the case that citations situated in different parts of a scientific article talk about same terms. We use the co-occurring terms in citations to summarize the cited papers. The resultant summaries are then used...
We report passivation on the silicon surfaces by combination of oxygen radical and high pressure H2O vapor heat treatment. The top bear surface of 20 Ωcm n-type silicon substrates with the rear surface coated by 100 nm thermally grown SiO2 layers were treated by oxygen radical generated from oxygen plasma via a metal mesh closing the plasma induced by 13.56 MHz radio frequency induction-coupled remote...
A frequency-tunable lens-coupled annular-slot antenna using a Schottky varactor diode has been developed and characterized at 140–220 GHz. A tuning range of ∼50 GHz (agree with simulation) has been demonstrated by varying the diode's DC bias. Antenna far-field patterns have been measured at 203 GHz, showing that the diode has only a minor effect on the antenna's radiation properties. This type of...
The sputter-deposited Cu thin film, coated with a thinner gold layer, was prepared into the butterfly pattern with alternating zones beween Cu thin film and Si. The eutectic SnPb solder balls with different sizes were reflowed on the butterfly pattern. As a result, the liquid solder would be selectively retained on the Au/Cu film zones. At the same time, under the energy minimization control, the...
Ag sintering technology has become a potential candidate to replace solder technology due to its well known high melting point (961°C), excellent electrical and thermal conductivity. In this paper, we report the evaluation of die attach using Ag sinter technology on substrates with different top metallizations (Au, Ag and Cu). Low pressure nano-Ag paste (Alpha Argomax) was chosen for this evaluation...
Glass (7740) and silicon (100) wafer are bonded using gold as the bonding medium and annealed to enhance the bonding strength at temperature about 450°C. The voids in the bonding interface are the main reason to cause the poor reliability of bonding, and scanning electron microscope (SEM) photos reveal that there are a number of voids in the craters on the surface of silicon wafer after bonding. It...
In this paper, a novel wet etching method, named metal-assisted chemical etching (MaCE), is applied for through silicon vias (TSVs) fabrications. The influence of key experimental parameters in MaCE, including catalyst, etchant and dimension of TSVs are discussed. Especially, the type, geometry and morphology of catalyst are varied and the results are compared. A high etching rate over 10 μm/min and...
The copper (Cu) wire has become a new alternative of wires in advanced packaging technology. In this research, we selected large Cu wires to develop a new bonding process based on solid-state process. Upon thorough investigation, we chose silver (Ag) as the bonding medium between Cu wires and silicon (Si) chips, for its ductility and superior physical properties. The end of Cu wires is cut and polished...
This paper explores silicon nanowire technology for ultrathin high-density capacitors, supercapacitors and batteries. Development of such thin power components on glass or silicon will allow integration with other passive components as well as actives such as decoupling capacitors close to locic Ics to form 3D integrated passive and active devices (3D IPACs) that could then be surface-assembled onto...
We demonstrate a newly-developed replication process of a surface shape from an atomically smooth master substrate onto electroplated Au patterns by a lift-off process using a thin sacrificial layer. An atomically smooth Au surface with a root mean square surface roughness of 0.8 nm could be replicated from the master substrate by this process. Then we examined its applicability to room-temperature...
We have studied a thermo-compression bonding method for high density interconnections. Fluxes are commonly used in conventional solder bonding. However, flux applications have several issues such as the void generation in solder and the flux residue remaining between bumps. These could degrade their reliabilities seriously when the bump pitch becomes small since these features do not scale to bump-pitch...
In this paper, a platinum-silver composite nano-dot (Pt@Ag ND) decorated tip apex was successfully fabricated by utilizing a localized two-step galvanic replacement. In the first replacement, Ag-ND tip was prepared by the replacement between silicon and silver ion through fluoride assisted galvanic replacement reaction. In the second replacement, the Ag ND was further changed to Pt by the interaction...
Silver nanowires are superior material for semitransparent electrode fabrication: with printing on a transparent glass or plastic film, deposited and mutually crossed-over silver nanowire network serves as a good electrical conductor, especially when they are composed of grain-boundary free crystallographic 1D nanowires. The free space among the network serves as transparent portion which light passes...
In this research, we combined the electrochemical etching (ECE) and the metal-assisted chemical etching (MACE) to develop a composite vertical etching process for silicon material and then discuss the etching results influenced by experimental parameters. The experimental results show that the developed composite etching process has faster etching rate than both electrochemical etching and metal-assisted...
In this study we presents an effective and simple process for forming multi-level vertical structures on a (100) silicon wafer. The dual materials including gold and platinum was employed as catalytic material in the etching process. We employed an etchant solution consisting of 4.6 M hydrofluoric acid, 0.44 M hydrogen peroxide, and isopropyl alcohol to produce microstructures at an etching rate of...
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