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We propose a method of reduction in optical reflection loss by transparent conductive Indium Gallium Zinc Oxide (IGZO) for the purpose of fabricating mechanical stacked solar cells. Si and Ge substrates coated with 200 nm thick 0.058 Ωcm IGZO layers were stacked with epoxy-type transparent adhesive dispersed with 20 µm sized Indium Thin Oxide (ITO) particles to form a structure of Si/IGZO/adhesive/IGZO/Ge...
We report passivation on the silicon surfaces by combination of oxygen radical and high pressure H2O vapor heat treatment. The top bear surface of 20 Ωcm n-type silicon substrates with the rear surface coated by 100 nm thermally grown SiO2 layers were treated by oxygen radical generated from oxygen plasma via a metal mesh closing the plasma induced by 13.56 MHz radio frequency induction-coupled remote...
We report passivation of silicon surfaces by heat treatment in boiled water. 500-μm-thick n- and p-type silicon substrates with bare surfaces were treated in boiled water for 1 h at 97–99°C. High values of the effective minority carrier lifetime were obtained to be 6.3×10−4 and 4.0×10−5 s for n- and p-type samples. The recombination velocity was estimated to be 34 and 680 cm/s for n- and p-type samples...
We report decrease in reflection loss at the intermediate adhesive layer for mechanical-stack-multi-junction solar cells by increasing the refractive index of the intermediate adhesive layer. Samples of self-standing films of 30-nm-TiO2-particle dispersed Cemedine and Si substrate/TiO2 dispersed Cemedine/ Si structure were fabricated. Analysis of transmissivity of the samples revealed that the effective...
We report a mechanical stacking technology with transparent conductive adhesive as intermediate conductive layer for multi-junction-solar cells. Transparent adhesive jell dispersed with Indium-Tin-Oxide (ITO) particles ranging from 5 to 10 wt% was developed for stacking solar cell substrates. A connecting resistivity below 2.0Ωcm 2 was achieved in a condition of solidifying the adhesive gel...
We report connection conductivity ( $$C_{\rm c}$$ C c ) of adhesive which including $$\hbox {In}_2\hbox {O}_3$$ In 2 O 3 – $$\hbox {SnO}_2$$ SnO 2 (ITO) particles developed for fabrication of stacked-type-multi-junction solar cells. The commercial 20- $$\upmu $$ μ m sized ITO particles were heated in vacuum at temperature ranging from 800 to 1,300 $$^{\circ...
Photo-induced minority carrier annihilation properties at the silicon surface in metal-oxide-semiconductor (MOS) structure were reported using a 9.35 GHz microwave transmittance measurement. Al electrodes were formed with a size of 0.1 × 2.0 cm2 at the top surface and with a half area at the rear surface of 12-Ωcm-n-type 500-µm-thick crystalline silicon substrates coated with 100-nm-thick thermally...
We report a simple method with a commercial microwave oven for activation of 22 Ωcm p-type silicon implanted with phosphorus atoms a doze of 1.0×1015 cm−2 at 1000 W for 9 min. Microwave transmittance measurement revealed a sheet resistance of 209 Ω/sq and an activation ratio of 60 %. The microwave heating achieved recrystallization of the amorphized surface region caused by ion implantation. Typical...
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