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WR-1.0 rectangular waveguide cavity band-pass filter based on micromaching technique is designed in this letter. The filter consists of two resonant cavities. A transmission zero is implemented by means of broaden stubs. The stub is broaden to the width of the resonant cavity, which simplify the fabrication. The proposed filter is fabricated using the deep reactive ion etching (DRIE) micromachining...
The curing process of flip chip (FC) on flexible printed circuit boards (FPCB) was introduced. The structure of equipment was analyzed. The possible effect of equipment structure was evaluated. Different finite element analysis (FEA) models in different situations were built. Thermal influence parameters were verified for curing process by comparing FEA models and actual products. The parameters of...
GaAs nanowires (NWs) growth kinetics by Ga-assisted chemical beam epitaxy on Si(111) substrates is studied as a function of the initial Ga catalyst dimensions and growth parameters such as substrate temperature and V/III flux ratio. The preparation method for substrates is optimized in order to obtain a surface oxide with a thickness around 0.5 nm, allowing the decomposition of Ga metalorganic precursor...
This paper reports on a novel hybrid integration concept that enables the realization of high-quality (Q) factor, low-frequency coaxial cavity resonators with well-defined capacitive-loading and variable center frequency. It is based on a silicon-micromachined spacer that is mounted on top of a conventional CNC-machined metallic cavity to functionalize the resonator's capacitance. For the first time,...
We report the new doped-AlN thin film, (Mg,Zr)AlN, based micro energy harvester. By co-doping Mg and Zr into AlN crystal, (Mg,Zr)AlN shows giant piezoelectricity and preserves low permittivity. (Mg,Zr)AlN has higher figure of merit (FOM = e312/(ε0ε)) than conventional PZT. The 13 at.%-(Mg,Zr)AlN had the experimental FOM of up to 16.7 GPa. The micromachining harvester provided the high normalized power...
In this paper, a novel betavoltaic (BV) microcell based on semiconducting single-walled carbon nanotube (s-SWCNT) arrays/Si heterojunctions are demonstrated for the first time. The aligned arrays of p-type s-SWCNTs were prepared on n-type silicon to form the p-n heterojunctions as energy conversion by the traditional micro-fabrication process and dielectrophoretic (DEP) technology. The s-SWCNT arrays/Si...
We successfully established a wafer level fabrication process of the quartz crystal resonator (QCR) load sensor using atomic diffusion bonding. The proposed sensor has three-layer structures; two Si-hold layers and a quartz layer. Using microfabrication and atomic diffusion bonding, the assembly process was simplified. The fabrication process enables further miniaturization of the QCR sensor due to...
ZnO nanorods, also known as metal-oxide semiconductor, with its high isoelectric point properties make it suitable for DNA application. To produce highly crystalline ZnO nanorods, the ZnO nanorods were synthesized using hydrothermal technique and annealed in the furnace at 500°C for 2 hours. XRD patterns indicates that the synthesized ZnO nanorods have preferred orientation along the (002) plane....
Thermal to electrical energy conversation was increased by ∼ 50% by dispersing 50-nm-diameter Au nanoparticles over the black-Si light harvesting surface at an optimized concentration of the Au-colloidal solution. The size of Au nanoparticles corresponds to the extinction maximum at the spectral location of the reflection dip of black-Si substrate. Black-Si with reflectivity of 1–2% over the entire...
Deep vertical etching of Si using hydrogen peroxide as oxidant and Au as catalyst has been studied in terms of relative reactant concentrations and catalyst morphology. The concentrations of hydrogen peroxide and hydrofluoric acid are highly important and the ratio of the same can be varied to achieve isotropic to highly anisotropic vertical etching. Catalyst morphology and positioning of the substrate...
Growth of silicon nanowires by Vapour-Liquid-Solid (VLS) method has been studied in a cold wall Catalytic Chemical Vapour Deposition (Cat-CVD) chamber. It has been found that the instrument can be used in two modes, Hot Wire Chemical Vapour Deposition (HWCVD) and Chemical Vapour Deposition (CVD). These modes are tested with two methods for the preparation of the catalyst nanoparticles, namely thermal...
Properties of heterojunction diodes having polyvinyl pyrrolidone (PVP) on p-Si substrate are investigated. PVP layer has grown onto p type silicon substrate via the sol gel spin coating route @ 2000 rpm. The Front contacts have been thermally evaporated in vacuum onto the organic layer at low pressure of 10–6 T, having a diameter of 1.5 mm and a thickness around 250 ± 10 nm. In this research, the...
TEOS and/or TEOS/HFE plasma polymerized thin films, exposed or non-exposed to ultraviolet (UVC) radiation, were obtained on gold electrodes and tested for electrochemical measurements. All films presented good performance on electrochemical measurements. The electronic signal does not change significantly after 24h on physiologic serum but thin TEOS films allow ion permeation. Thus, these films are...
The electroless deposition of Gold on H-terminated Si(100) substrates has been investigated with 2.0 MeV He+ ions Rutherford Backscattering Spectrometry (RBS) and Transmission Electron Microscopy (TEM). A large number of Gold nanoparticles (in excess of 1011 cm−2) was instantaneously generated on the silicon substrate by immersion in a solution containing 1mM KAuCl4 and 4.8M HF. The gold atomic surface...
This work demonstrates the use of gold stud bumps in the design of a CPW-to-CPW flip-chip transition between a silicon die and a FR-4 substrate. The performance is optimal in the 57 to 77 GHz range with return loss values better than 20 dB. The insertion loss of the designed transition and bump is 0.35 dB at 60 GHz as demonstrated in a back-to-back design. To demonstrate the usefulness of the transition,...
In this paper, patterned Cu and Si substrates are interconnected via solder alloys through Al/Ni self-propagating nano-film to obtain hermetical packaging for infrared detector. During the joining process, substrates which are coated with different solder layers (e.g. Sn and AuSn) are bonded under various atmospheres. By optimizing joining parameters, reliable metallurgical joints between Si/Cu and...
Although digital microfluidic system has shown great potential in a wide range of applications, a single-chip platform integrating biochemical sensors with digital microfluidic devices is still lacking. In this paper, film bulk acoustic resonator (FBAR) sensors and electrowetting-on-dielectric (EWOD) actuator are integrated on a single silicon chip, where the EWOD actuator manipulates digital droplets...
This paper demonstrates the monolithic integration of a plasmonic device with metal-oxide-semiconductor field-effect transistors (MOSFETs) on a Si substrate. The plasmonic device consists of a waveguide and a detector, and is fabricated by a simple process. We confirmed that surface plasmon polaritons (SPPs) propagate for a distance of 100 μm on the Au surface, and are detected as a photocurrent....
The design, fabrication, and characterization of a reflective quarter-wave plate operating at 1550 nm wavelength are presented. This device consists of a subwavelength-period grating in silicon with an evaporated gold coating, and is compatible with standard fabrication processes.
A configurable optical retarder based on an active plasmonic grating for visible wavelength is reported. Due to giant birefringence induced on a slit between gold grating lines, a half-wave plate can be developed with a subwavelength thickness. In this research, the grating consists of Au/Si bimorph beams and by actuating interleaved beams by Joule heating, effective thickness of slits is adjusted,...
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