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We present CMOS post-processing compatible resonator structures for passive band-pass filtering in the MHz-few GHz range. This article discusses the considerations leading to the choice of materials and process sequence, practical aspects in the fabrication, and resonator performance. Using in-situ boron-doped polycrystalline germanium-silicon as resonator and electrode material, high quality factors...
The aim of this work is to model accurately the DRIE Bosch process used for the MEMS components fabrication. This modelling will permit, depending on the design, to obtain a 3D visualization of the substrate after etching and therefore foresee the real MEMS profile. Another objective is to determine, depending on the modelling accuracy, some process parameters which have been used on the etching equipment...
This work focuses on the modeling of MEMS piezoresistive pressure sensors with two different diaphragms, one with silicon and the second with silicon and silicon dioxide stack using FEM software Intellisuite®, and comparing the performance parameters of the two sensors. The diaphragm deflection in Silicon pressure sensor was found to be more and exhibit more stress at the edges when compared to SOI...
Square poly cry stalline 3C silicon carbide (poly-SiC) thin diaphragms with large aspect ratios (i.e., side length to thickness: L/t ∼ 600) are explored as a structural material for micromechanical resonators. The effects of varying pressure on the characteristics of multiple resonant modes are studied. Load-deflection tests reveal a Young's modulus of EY = 344 ± 13 GPa and a residual (built-in) stress...
Silicon carbide (SiC) is a leading material for both semiconductor devices and harsh environment micro- and nano-electromechanical systems (MEMS/NEMS) due to a combination of exceptional electrical, mechanical and chemical properties. SiC is also an excellent structural material for micromechanical transducers because of its high Young's modulus and mechanical strength. Suspended thin film diaphragms...
MEMS technology opens up and develops a bran-new technology. MEMS technology is applied in many fields and is developing into kinds of huge industries. The silicon piezoresistive pressure sensor and resonance beam silicon pressure sensor are key branches of MEMS and are analyzed and discussed in detail in this paper. This paper provides relative references and basics for scientific research of silicon...
The purpose of this paper is to present a new material concept to develop highly sensitive three-dimensional tactile force sensors. Conventional three-dimensional force sensors are based on silicon with integrated diffused silicon piezoresistors. Micromechanical force sensors using a soft material instead, e. g. SU-8 resist, would be more sensitive for static deflection measurements. As a characteristic...
MEMS-based programmable slit masks are developed for multi-object spectroscopy in astronomy. Devices with 2048 tiltable micromirrors were fabricated and tested, exhibiting very good surface flatness, high contrast and cryogenic operation ability.
In this work, we present for the first time a miniaturized planar W-band dielectric-lens antenna which is micromachined in a 300 µm silicon wafer. The antenna edge comprises a metamaterial anti-reflection geometry in order to reduce parasitic reflections at the free-space to high-permittivity dielectric interface. Furthermore, the dielectric lens is matched to a standard WR-10 metal waveguide by an...
An all-silicon capacitive-post loaded cavity tunable resonator, continuously tunable from C to K frequency bands is presented for the first time. All parts of the resonator are fabricated using silicon microfabrication techniques. The presented device is tuned electrostatically from 6.1 to 24.4 GHz (4∶1 tuning range) with a measured unloaded quality factor (Qu) from 300–1,000. The resonator includes...
The latest advances in MEMS inertial sensors for applications where size, weight, power, and cost are key considerations are having profound effects on the market place. MEMS industrial and tactical-grade sensors are the most dynamic technology in the high-performance inertial industry. Yole Developpement sees the market growing from $381.8M in 2011 to $638.8M in 2017 for single MEMS accelerometers...
The precise patterning of periodic slow-wave structures can be successfully accomplished by modern photolithography technology on flat substrates in high frequency regime (>100 GHz). When the aspect ratio of the structure between in-plane and out-of-plane dimensions becomes higher than unity, however, controlled MEMS (micro-electromechanical systems) technologies are strongly required to achieve...
This paper reports the characteristics of wafer-level XeF2 gas-phase etching. Compared with chip-level XeF2 etching, the silicon etch rate for wafer-level XeF2 process is much smaller, which is mainly caused by the large exposed silicon area in wafer-level process. Additionally, the silicon etch rate drops off as etching time increased. The aperture size effect is apparent in wafer-level XeF2 processing...
We propose an extension and improvement to reliability predictions in epitaxially grown 3C-SiC cantilever beam MEMS by utilizing dynamic Raman spectroscopy to allow the gathering of Weibull fracture test data to be done directly on devices thereby taking account of actual geometrical tolerances, dynamic load conditions and effects from the microfabrication process due to high lattice and thermal mismatch...
A new micromechanical switch for high-frequency applications is presented. The switch is fabricated by silicon deep reactive ion etching (DRIE) and electroplating. The actuation is realized by an electrostatic parallel plate drive with high actuation force which allows the use of hard gold as contact material. The switch can be adapted for DC to 20 GHz applications. A hermetic zero-level packaging...
This paper presents the results of FEM (Finite Element Modeling) analysis of Integrated Thermal Flow Sensor intended to be used in a Spirometer to measure air flow generated by human's respiratory. Using calculated air flow, the sensor output is used to predict the air flow pattern characterized by two physical parameters, known as FVC and FEV. It is shown that different geometrical design, namely...
Etching post-processes are usually done with systems based on MEMS structures compatible with CMOS technology like micro hotplates membranes used in MEMS gas sensors. Silicon anisotsropic etch steps follows fabrication of the integrated circuit in a silicon foundry for the release of the membrane but care should be taken to avoid damage to other layers used for integrated circuit fabrication, as aluminum...
Limited by the current MEMS fabrication technology, full symmetry of the left and right parts of a dual-mass silicon micro-gyroscope is not achievable. Based on the characteristics of the dual-mass structure, a two degree-of-freedom viscous-damping vibration system model was established for the micro-gyroscope. Harmonic response analysis of the vibration system was implemented then, based on which...
Fabrication and actuation errors of submicron silicon waveguide optical switches are reported to remain within sub-100 nm ranges. These errors cause high loss ruining the optical performance of the switches at the on-state. Elliptical tips with tip angles about the Brewster angle are studied in an attempt to reduce the high-loss of such optical switches. Numerical computations are conducted in 3D...
A novel process for fabricating robust electrothermal bimorph based MEMS devices is reported and scanning electrothermal micromirrors are fabricated. Device parameters can be chosen to customize thermal response time and power requirements. Aluminum (Al) and Tungsten (W) form the active bimorph layers and polyimide is used for thermal isolation.
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