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The cellular frequency spectrum has become increasingly complex with over 50 frequencies in LTE standards. To reduce costs in the front end module the switch has migrated from a III–V PHEMT base to a silicon solution in RFSOI. While many providers have focused on a 180nm base technology node for the RFSOI there has been an increasing move to more advanced nodes to solution the logic requirements of...
This paper describes a direct-conversion 45nm SOI CMOS 60 GHz transceiver for same-channel full duplex applications. A novel polarization-based wideband self-interference cancellation (SIC) technique in the antenna domain is described that can be reconfigured from the IC. In order to achieve the high levels of required SIC, a second RF cancellation path from the transmitter output to the LNA output...
A 4.6–5.35GHz transceiver with active self-interference cancelation is reported. The active cancelation circuit cancels up to 38dB of TX leakage at 10kHz offset from the RX signal. It increases the interference P1dB from −25dBm to −8dBm, and RX gain by 15dB. When the transceiver is utilized in a magnetic resonance spectroscopy system, the SNR improves by 15dB. Furthermore, in addition to the traditional...
Motion planning and open-loop (steering) control synthesis for a cantilever beam with a uniformly distributed piezoelectric actuator on the whole surface, called a piezoelectric bender is considered. With a flatness based control design method an exact formula is derived for the control voltage which must be applied in order to achieve a prescribed deflection in a specified finite time. This control...
RF-MEMS filters will substitute conventional filters as they offer better performance at optimum cost. A bandpass filter is one such filter which is designed using microelectro-mechanical systems (MEMS) technology which have low insertion loss, high quality factors, good temperature stability and have various unique advantages. This paper reports on the implementation of wide bandpass filter using...
In this paper the evolution of silicon based automotive radar for the 76-81 GHz range is described. Starting with SiGe bare-die chips in 2009, today packaged MMICs are available for low-cost radar applications. Future SiGe BiCMOS technology will enable highly integrated single chip radars with superior performance at lower power consumption. This will pave the way for automotive radar safety for everyone...
Tunable and Reconfigurable applications using RFSOI-on-HR (high resistivity) silicon technology are being deployed in increasing numbers in today's advanced RF cellular handsets in order to provide increasing data rates demanded by the consumer market. These RFSOI solutions are being deployed to meet the demanding specifications of complex 4G RF cellular front-ends with numerous transmit and receive...
The increasing demand for wireless data bandwidth and the rapid adoption of LTE and LTE Advanced standards push radio-frequency (RF) IC designers to develop devices with higher levels of integrated RF functions, meeting more and more stringent specification levels. The substrates on which those devices are manufactured play a major role in achieving that level of performance [1]. In this paper, Soitec...
In this work, we discuss the state-of-the-art of GaN-on-diamond wafer technology at Element Six. We report our recent demonstration of 100mm (4″) GaN-on-diamond HEMT epitaxial wafers—with the highest thermal conductivity of diamond (>1500 W/mK) yet. The wafers exhibit <20µm bow mounted on-carrier, sheet resistivity of <450 Ohms/sq, and CV specs that are in-line with industry expectations.
Low k (dielectric constant) barrier (SiCN) is one of the most critical dielectric films used in Cu interconnects, and it has great impact on device reliability such as gate oxide integrity (GOI), plasma induced damage (PID), time-dependent dielectric breakdown (TDDB), electromigration (EM) and so on. This work was to investigate an intermittent GOI failure at 40nm CMOS devices, which was caused by...
This paper reports experimental results of self-interference cancellation of a full-duplex radio front-end using two techniques, which are antenna cancellation and RF circuit cancellation. Transmitting signals are fed to two identical antennas through a rat race coupler for 180° phase difference, resulting in the antenna cancellation at a receiving antenna equally apart from transmitting antennas...
In-band full-duplex (FD) wireless communication, i.e. simultaneous transmission and reception at the same frequency, in the same channel, promises up to 2x spectral efficiency, along with advantages in higher network layers [1]. the main challenge is dealing with strong in-band leakage from the transmitter to the receiver (i.e. self-interference (SI)), as TX powers are typically >100dB stronger...
A multiquantum well (MQW) double-drift region (DDR) impact avalanche transit time (IMPATT) device based on Si/3C-SiC material system has been proposed for high frequency application. One symmetrical and two asymmetrical doping profiles for the proposed hetero-structure device are considered in the present study. The design and optimization of the abovementioned three doping profiles of SÌ/3C-SÌC MQW...
A four-level optimization technique has been used to design a double low-high-low (DLHL) impact avalanche transit time (IMPATT) diode based on Si for 60 GHz operation. Initially the position of the charge bumps in both «- and p-epitaxial layers followed by the widths of those and the ratio of high to low doping concentrations have been varied subject to obtain the maximum large-signal DC to RF conversation...
Multiband FDD operation requires numerous off-chip duplexers, which limit form factor. Widely-tunable low-noise RF active self-interference cancellation (SIC) (e.g. [1]) is a step towards enabling duplexers with reduced TX/RX isolation as well as adjacent-channel full duplex. However, SIC bandwidth (BW) is limited to a few MHz due to the selectivity of the high-Q duplexer isolation. Recent works suggest...
In this work, silicon dioxide layers are deposited by RF sputtering technique at low temperatures for micro electro mechanical systems (MEMS) and CMOS applications. Due to incompatibility of thermally grown oxide in CMOS and MEMS applications, sputtered oxides shown good alternative method for oxide depositions. The sputtered layers shown similar characteristics as thermal oxides. FTIR, AFM and SEM...
We demonstrate a radio frequency (RF) probe based on microelectromechanical systems (MEMS) design and processing technologies. The probe responds to the current needs of microelectronics requiring microwave characterization of nanoscale devices and systems having micrometer pad sizes. The use of MEMS technologies enables the probe contact pad area dimensions to be reduced by a three orders of magnitude...
This paper presents an innovative, uncomplicated and inexpensive method based on a glass reflow process to fabricate glass-embedded passives for RF MEMS packaging. Experimental results show that various glass-embedded passives, including annular cylindrical and coaxial cylindrical conductive through-holes, plate and coaxial torus trench capacitors, square spiral, circular spiral and meander trench...
RF performance flexible thin-film transistors toward green portable devices were realized. The cellulose nanofibrillated fiber (CNF) substrate combined with Si nanomembranes (Si NMs) printing technique enables to fabricate flexible, high-speed and bio-degradable devices. Flexible Si NM thin-film transistors (TFTs) built on the CNF substrate show mobility of 336 cm/v·s and fT and fmax of 2.4 GHz and...
Nanostructured porous silicon is very promising for RF applications by overcoming the high-frequency losses originating from the bulk silicon substrate. RF performance and non-linearity analysis of different silicon substrates including, porous (PSi), trap-rich (TR) high resistivity (HR) types are explored experimentally. The investigation is done by means of coplanar transmission lines (CPW) fabricated...
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