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CMOS Silicon on Insulator (SOI) is now the technology of choice for RF switches in front end module systems. The emergence of 4G cellular systems with carrier aggregation has made the design of front end modules more complex. To take into account the diversity paths now required in cellular systems the low noise amplifiers (LNAs's) are being integrated in the front end module along with the switches...
A novel approach to technology integration of system-on-chip RF Front-End Module (FEM) is presented. Device design to achieve best-in-class extended drain power mosfet (EDNMOS) with Ron of 1.6Ohm-mm and fT >39GHz is discussed. This is followed by an analysis of a high performance switch device integrated via selective silicon thinning.
The cellular frequency spectrum has become increasingly complex with over 50 frequencies in LTE standards. To reduce costs in the front end module the switch has migrated from a III–V PHEMT base to a silicon solution in RFSOI. While many providers have focused on a 180nm base technology node for the RFSOI there has been an increasing move to more advanced nodes to solution the logic requirements of...
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