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CMOS Silicon on Insulator (SOI) is now the technology of choice for RF switches in front end module systems. The emergence of 4G cellular systems with carrier aggregation has made the design of front end modules more complex. To take into account the diversity paths now required in cellular systems the low noise amplifiers (LNAs's) are being integrated in the front end module along with the switches...
A novel approach to technology integration of system-on-chip RF Front-End Module (FEM) is presented. Device design to achieve best-in-class extended drain power mosfet (EDNMOS) with Ron of 1.6Ohm-mm and fT >39GHz is discussed. This is followed by an analysis of a high performance switch device integrated via selective silicon thinning.
Third-order intermodulation intercept (IP3) of 90 dBm required for uplink carrier aggregation in LTE systems drives technology, modeling, design and characterization methods for Front-End semiconductor technology. For the first time, direct on-wafer switch branch IP3 of 84 dBm on trap-rich RF silicon on insulator (RFSOI) is demonstrated. Exploiting widely available low passive intermodulation (PIM)...
The impact of scaling in advanced RF/MS-CMOS has been extensively discussed but there has not been a publication that compares the RF characteristics of 28nm high-K metal gate HKMG and PolySiON technologies fabricated in the same facility. In this work, we show that HKMG improves transistor fT and increases varactor tunning range. However, it can actually decrease fmax. We examine how process features...
The cellular frequency spectrum has become increasingly complex with over 50 frequencies in LTE standards. To reduce costs in the front end module the switch has migrated from a III–V PHEMT base to a silicon solution in RFSOI. While many providers have focused on a 180nm base technology node for the RFSOI there has been an increasing move to more advanced nodes to solution the logic requirements of...
This noise modelling, characterization and measurement from 0.5 GHz to 67 GHz is reported for the first time in coaxial. RF CMOS devices fabricated on GLOBALFOUNDRIES' 40nm technology are measured with Focus Microwaves noise system for full frequency span of 67 GHz. Experimental results agree well with theoretical and modeling results.
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