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The smallest wirelessly powered neural implant to date is demonstrated. Power is sent over a near-field inductive link. The implant system is realized on a single CMOS ASIC which includes the on-chip coil, the harvesting circuit, and the current driver. The entire system is fabricated in a 0.13 μm CMOS process and occupies merely 180 μm × 180 μm.
This demonstration presents a practical real-time full-duplex wireless link consisting of two full-duplex transceivers. Our prototyped full-duplex transceiver contains a custom-designed RF self-interference canceller and a National Instruments (NI) Universal Software Radio Peripheral (USRP). The discrete-component-based RF self-interference canceller emulates a compact RFIC implementation, which uses...
A throughput analysis is conducted for a large scale peer-to-peer wireless network whose devices are capable of operating in both full- and half-duplex modes, using the tools of stochastic geometry. Each device selects its operating duplex mode based on the distance to its partner node. In both duplex modes, the energy consumption and the hardware configurations of the nodes are made equivalent for...
Increasing data needs much larger memory capacity. One of the Flash Memory Solution is Vertical NAND (V-NAND) Flash Memory. In order to fabricate this device, a high aspect ratio hole must be made in the channel hole through the etching process after multilayer thin film deposition. In order to obtain high aspect ratio etch, process condition should have high RF power, high flow rate of polymer gas,...
This paper reports on a rectifier with 100 mW class dc output at 5.8 GHz using a gallium nitride (GaN) shottly barrier diode and silicon (Si) matching circuit. The originality of the study lies in its adaptation of the hybrid semiconductor integrated circuit (HySIC) technology that utilizes different types of semiconductors. We have completed the basic steps for developing a rectifier based on the...
Thermal models for simulating heating and cooling of PIN diode and FET-based MRI coil blocking circuits are presented. The temperature dependent parameters in the two basic circuit elements as well as the related SPICE-compatible circuit models are discussed. Impedance versus temperature measurements for both PIN diode and MOSFET are presented that confirm the validity of model usage. A MRI coil blocking...
In this work, the performance of full-duplex spatial-modulated communication systems is investigated over Rayleigh fading channels. An upper bound for the average bit error probability of the proposed system is derived in a closed-form. During the analyses, the effect of the residual loop interference due to the full-duplex transmission is also considered. The accuracy of the theoretical analysis...
This paper demonstrates fundamental evaluation results of a C-band rectifier using Si substrate for HySIC application. Usage of the Si substrate is attractive for future integration with other mixed signal circuit. Because of large loss tangent of the Si substrate, applicability as a circuit substrate to the C-band rectifier is discussed. Two types of the rectifier, conventional printed circuit board...
TSV (Through Silicon Via) is one of advanced semiconductor technologies for miniaturization and improved performance at the system integrated circuits. Recently, more complex module should be required this process to be integrated. There specific module for a mobile wireless communication, called TSV (Through Silicon Via) module is now adapted and imbedded with individual passive devices. In this...
In the millimeter wave beam multiplexing system, sidelobe decreases data-rate because data-rate is decided by signal to noise level (SINR), and sidelobe decides SINR. Sidelobe is decided by interference of coupling and phase error between RF channels, so suppress coupling and phase error is important to obtain high data-rate. Structures, such as cavity that silicon chip is placed in it to reduce length...
Gate all around (GAA) nanowire MOSFETs with gate length of 130 nm were fabricated on SOI wafers. The analog performance was analyzed in terms of transconductance, output conductance, voltage gain, Early voltage and transconductance efficiency. The RF characterization showed relatively low cutoff frequency and maximum oscillation frequency. Small-signal parameters are extracted using cold FET method...
The challenges with full-duplex transceiver (FD) implementation and transmission in small area radio communication systems are introduced. The main challenge in the FD transceiver design is the self-interference (SI). A three-stage SI cancellation is used for SI mitigation. Analog SI isolation is performed at radio frequency (RF) by utilizing an antenna design based on the characteristic modes theory...
Genuine full-duplex operation requires effective mitigation of self-interference (SI) due to simultaneous transmission and reception at the same frequency band. In addition to its well-known harmful effect on signals of high peak-to-average power ratio, nonlinear behavior of a power amplifier (PA) complicates SI cancellation and induces spectral regrowth. We introduce a digital predistortion architecture...
The effect of different buffer layers on the RF losses of GaN-based high-mobility-transistors (HEMTs) on Si substrate has been studied. It is found that the electron inversion layer induced by the residual tensile stress in AlN buffer is responsible for a dominant loss factor. It is first time such mechanisms of the RF loss of GaN/Si is discussed. It is proven that using a thin high-low-high temperature...
High levels of integration in SoCs and SoPs is making pre as well as post-silicon validation of mixed-signal systems increasingly difficult due to: (a) lack of automated pre and postsilicon design checking algorithms and (b) lack of controllability and observability of internal circuit nodes in post-silicon. While digital scan chains provide observability of internal digital circuit states, analog...
As electronic products becomes smaller and thinner with increasing number of functions, the demand for high density and high integration becomes stronger. Glass has many properties that make it an ideal substrate for high integration substrate such as; ultra high resistivity, adjustable thermal expansion (CTE) high modulus, low dielectric constant, low dielectric loss and manufacturability with large...
Smart ICT (Information and Communication Technology) such as “Big Data”, “Cloud computing” and Smart Functionalities such as Stand-alone Self-activating MEMS/Sensors construct Smart Systems which enable IoT (Internet of Things), IoE (Internet of Everything) thus Smart Society. To realize above-mentioned Smart Technologies, high-density, low-power consumption, wide-bandwidth, fast-operation semiconductor...
Significant advances have been made to lower the power consumed by active and passive components, a lot of integration still happens either on-chip or on PCB. On-chip RF integration, also known as RF system-on-chip (SoC), achieves miniaturization on silicon substrate but is expensive and results in higher loss, especially for analog RF signals. On the other hand, integration at the PCB-level sacrifices...
Full-duplex (FD) radio communication potentially doubles the spectral efficiency in the densely occupied RF spectrum (100MHz to 5GHz). However, significant challenges remain, particularly the presence of a strong transmitter (TX) self-interference (SI) coupling to the receiver (RX). Numerous recent efforts on mitigating SI have focused on using active cancellation techniques [1–5]. However, these...
We report on a 1D linear array of GHz ultrasonic transducers as an ultrasonic impedance imager for fingerprint sensing. This device is based on an all solid state aluminum nitride (AlN) transducer array that eliminates the need for released membranes. Compared to lower frequency (10–50 MHz) ultrasonic sensors, our device uses GHz ultrasonic pulses, generated by driving AlN pixel transducers at resonance...
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