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Among the alloys of Group IV semiconductors the Germanium-Tin (GeSn) alloy is particularly interesting as it exhibits a small and direct band gap for a certain range of Sn content [1]. This feature can be exploited for highperformance tunnel FET (TFET) application [2], [3]. The small direct band gap enhances the band-to-band-tunneling (BTBT) rate which results in a high on-current. In order to reduce...
MapReduce is an important distributed programming model for large-scale data-parallel applications like web indexing, data mining, and scientific simulation. Hadoop is an open-source implementation of MapReduce and it is often applied to short jobs for which low response time is critical. When the cluster nodes are homogeneous, Hadoop has a good performance. In practice, the homogeneity assumptions...
In order to build solder bumps with a fine-pitch of 100 μm and 130 μm on PCB substrate, low volume solder on pad (LVSoP) technology using a maskless technology was developed for SAC305 solder with a high melting temperature of 220°C. For the LVSoP process, SBM (solder bump maker) material was newly developed. The solder bump maker (SBM) paste and its process were quantitatively optimized to get a...
We demonstrate high performance porous Si based supercapacitor electrodes that can be utilized in integrated micro supercapacitors. The key enabler here is ultra-thin TiN coating of the porous Si matrix leading to high power and stability. The TiN layer is deposited by atomic layer deposition (ALD), which provides sufficient conformality to reach the bottom of the high aspect ratio pores. Our porous...
The SnPb solder ball was reflowed on the Cu film in a flow of reducing gas, and the reactive spreading process was in situ recorded by a CCD camera. On the thicker Cu films, it was observed that dewetting did not happen even if the Cu6Sn5 intermetallic compounds spalled into the liquid solder. However, on the thinner Cu films, dewetting would occur when the liquid SnPb solder consumed the underneath...
The Ge/Ge0.94Sn0.06/Ge double heterostructure was grown on a Si substrate via chemical vapor deposition (CVD). The temperature and pump power-dependent photoluminescence (PL) were investigated and the enhanced direct transition at intense pump power was observed.
The Ge/Ge0.94Sn0.06/Ge double heterostructure, grown on a Si substrate was fabricated into a p-i-n photodiode. The dark I-V characteristics and 1.4–2.2 μm spectral response were measured for comparison with other on Si infrared detectors.
Vertical GeSn pin photodiodes with Sn content of 0 %, 2 % and 4.2 %, resp., grown with molecular beam epitaxy on thin Ge virtual substrates on Si are investigated by using the electrical and optoelectrical methods: direct current, light responsivity and optical high frequency (40 GHz). The vertical photodiodes were fabricated with a double mesa process. The mesa radii are between 5 μm and 80 μm. For...
Assessing the I/O performance delta between dual-referencing and ground-referencing schemes is needed to enable a lower layer count on either board or package, thereby reducing the overall platform cost. Existing methodologies attempted in quantifying impact simultaneously on both PI (Power Integrity) and SI (Signal Integrity) [1], [2] although the work is usually focused on I/O power delivery impact...
The concept of feasibility (or schedulability) interval plays a very important role in the schedulability analysis in real-time systems. Existing results on the schedulability testing interval of real-time task sets under fixed priority scheduling with arbitrary release offsets (or phases) have limitations for certain scenarios in constructing a schedule for testing the schedulability of a given task...
The spectral response and responsivity of a GeSn photoconductor were measured from 300 to 77 K. The maximum responsivity of 0.06 A/W was measured at 1550 nm for 10 volts bias at 140 K.
A class of extensions of Small Nim are investigated. Under normal or misére play convention, all P-positions are determined. The structures of P-positions are of algebraic form, which permits to decide in polynomial time whether or not a given game position is a P-position.
The simulation of a double-tunnel junction with the SENS simulator gives access to the frequency-dependent and static behavior of shot noise. The concept of basic paths in a multi-state process provides a clear interpretation of the noise regimes, and allows locating cut-offs in autocorrelation functions and spectral densities.
Service selection has been a critical concern for constructing a distributed service-based system. So far, research efforts on service selection are mainly based on the criteria of functionality and QoS (Quality of Service). However, the credit of Web service represents the reputation and importance of a Web service, which also provides a key criterion for selecting service. Then the challenge is...
This paper describes a joint research project in the field of grid integration of distributed renewable energy sources. Several research groups cooperate in an interdisciplinary approach. Main focus of this research project is the analysis of both influence and possibilities of multi-agent systems (MAS) which control consumers and renewable energy resources (RES) in future energy systems. Analysis...
We presented a new ray tracing technique which is applicable for crosshole radar traveltime tomography. The new algorithm divides the ray tracing process into two steps: First the wavefront propagation times of all grid points in a velocity field are calculated using the multistencils fast marching method (MSFM), and then the ray tracing paths having the minimum traveltime can be easily obtained by...
The first demonstration of Germanium-Tin on Silicon (Ge1−χSnχ/Si) avalanche photodiode (APD) for short-wave infrared (SWIR) imaging is reported. The temperature dependence of breakdown voltage was characterized. An extracted thermal coefficient of 0.05% K−1 indicates that the Ge1−χSnχ/Si APD achieved a lower thermal sensitivity than conventional III–V-based APDs. At the wavelength λ of 1600 to 1630...
This paper defines a formal framework for the modular and hierarchical model-checking of mu-calculus against modular transitions systems. Given a formula phi, a module can be analysed alone, in such a way that the truth value of phi may be decided without the need to analyse other modules. If no conclusion can be drawn locally, the analysis provides information allowing to reduce the module to a smaller...
In this work we demonstrate a new selective metallization technique to perform localized plating on the screen-printed Al contact using the innovative approach based on Dynamic Liquid Drop/Meniscus that is able to touch the cell back contact in specific defined positions and show that it is possible to produce suitable electrical and mechanical contact with Al-Si and thus to replace the silver from...
The SnPb solder ball was reflowed on the Cu film in a flow of reducing gas, and the reactive spreading process was in situ recorded by a CCD camera. On the thicker Cu films, it was observed that dewetting did not happen even if the Cu6Sn5 intermetallic compounds spalled into the liquid solder. However, on the thinner Cu films, dewetting would occur when the liquid SnPb solder consumed the underneath...
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