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III–V Impact-ionization (II) metal-oxide-semiconductor FETs (I-MOSFETs) and tunnel FETs (TFETs) are being explored as promising devices to achieve the best behavior for low power logical circuits. To facilitate the design process of these devices from the physical point of view, a Monte Carlo (MC) model which includes impact ionization events and band-to-band tunneling is presented. Our MC simulator...
The simulation of a double-tunnel junction with the SENS simulator gives access to the frequency-dependent and static behavior of shot noise. The concept of basic paths in a multi-state process provides a clear interpretation of the noise regimes, and allows locating cut-offs in autocorrelation functions and spectral densities.
The 3D Monte Carlo simulation of an Si dot-based double-tunnel junction shows not only the possibility of shot noise suppression down to the Fano factor of 0.5, but also of super-Poissonian noise in the case of multi-state process. The counting statistics of the tunneling events provides a clear interpretation of the different noise regimes according to the balance between the different tunneling...
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