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Conventional planar transistors have been used throughout the semiconductor industry for the past several decades. Further miniaturization of conventional devices has been proven to be a significant challenge and thus the industry has transitioned to Planar Fully Depleted FETs and FinFETs. As we look out at technologies beyond 7nm node there are many barriers which appear to limit the scalability...
The effect of strain on carrier mobility in triple gate FDSOI nanowires is experimentally investigated through piezoresistance measurements. We propose an empirical model based on simple assumptions that allows fitting the piezoresistive coefficients as well as the carrier mobility for various device geometries. We highlight an enhanced strain effect for Trigate nanowires with channel height below...
The electron spin properties are promising for future spin-driven devices. In contrast to charge, spin is not a conserved quantity, and having sufficiently long spin lifetime is critical for applications. Silicon, the major material of microelectronics, also appears to be a perfect material for spintronic applications. The peculiarities of the subband structure and details of the spin propagation...
This paper presents a new methodology for multiscale strain simulations of semiconductor devices based on the valence force field (VFF) method and the finite element method (FEM). By coupling the atomistic and the continuum methods, only advantages such as the atomistic description and accuracy of the VFF method and the flexibility and numerical efficiency of the FEM can be obtained.
We theoretically investigate the impact of uniaxial strain in extremely thin Si and Ge p-type double gate transistors. Quantum transport modeling is treated using a 6-band k.p Hamiltonian and the non-equilibrium Green's function formalism including hole-phonon scattering. Based on this framework we analyze the influence of strain on current characteristics considering different transport directions...
We demonstrated a flexible crystalline silicon nanomembrane photonic crystal microcavity with a quality factor of 22,000 and experimentally studied its bending behavior.
We observe the clear inverse piezoresistance effect in the silicon nanomembranes. Thickness-dependent optical-pump terahertz spectroscopy strongly corroborate that the effect originates from the carrier-concentration changes via charge carrier trapping into strain-induced defect states.
We present a new, CMOS-compatible platform for inducing a large, spatially homogeneous biaxial strain in Ge microdisks. This platform can deliver substantial performance improvements to biaxially strained Ge lasers for silicon-compatible optical interconnects.
For the nanoscale MOSFET technology, the strain engineering is emerge as the most important performance booster technique in terms of carrier mobility, low scattering and consequently the high on current. In this paper, the state of art for nanoscale strained MOSFET has been reviewed in terms of performance improvement and manufacturability. Further, the strain engineering along with advanced performance...
This simulation work studies whether optimal wafer and channel orientations exist that maximize the mobility of 10 nm-node strained-silicon FinFETs. For NFinFETs, strain-relaxed buffers or source/drain stressors yield the highest mobilities on rotated-notch wafers. For PFinFETs, industry-standard directions give the highest mobilities when using Si1−yCy strain-relaxed buffers as a stress booster....
Strained Ge p-channel FinFETs on Strain Relaxed SiGe are integrated for the first time on high density 45nm Fin pitch using a replacement channel approach on Si substrate. In comparison to our previous work on isolated sGe FinFETs [1], 14/16nm technology node compatible modules such as replacement metal gate and germanide-free local interconnect were implemented. The ION/IOFF benchmark shows the high...
The pressure sensor is a key device in many mechatronic systems for automotive and industrial applications. We represent the piezoresitive pressure sensor based on the single crystal silicon strain gauges, which are glass-fused to the stainless steel diaphragm at high temperature. The silicon bulkmicromachined strain gauges have the through holes and the closed structure, unlike the current competitive...
In this work we have studied delamination in Open Through Silicon Vias structures under different initial stress loads. The study has been carried out by means of simulation which is based on the evaluation of the J integral for different interfaces. Our simulations enabled us to determine the structures with the lowest failure probability.
In summary, we report NPI as a flexible dielectric for transistors based on 2D atomic sheets such as graphene and MoS2, which features high mechanical flexibility, stable electrical performances and low roughness. NPI offers the realistic prospects for highly flexible electronics beyond the typical 2 % limitation of high-κ or ceramic gate dielectrics
Buckled membranes are commonly used in microelectromechanical systems (MEMS) structures. One application of a microfabricated membrane is pressure sensing. A differential pressure across the membrane causes deflection, up or down, which can be measured and related to a specific pressure change. Recent work has demonstrated that the deflection and stiffness of these membranes can be tuned through localized...
This paper successfully established an effective model for analyzing the fracture mechanism of the silicon wafer when subjected to force by stealth laser beams. By using this model, simulations can be performed, in substitution of experimentation in a large quantity, to quickly obtain the wafer fracture trend at various machine parameters when stealth dicing (SD) is applied. A commercial software...
Physically meaningful and easy-to-use analytical solutions are obtained, using analytical modeling and theory-of-elasticity approach, for thermal stresses in typical through-silicon-via (TSV) packages of 3D IC devices. The case when the package is heated up from the room temperature to an elevated temperature is considered. Two extreme cases of the TSV geometry are addressed: disc-like vias, with...
We propose a new non-destructive extraction method of gauge factor (GF) of nanowires (NW) for in-line monitoring of this parameter and piezoresistive material properties comparisons. Unlike destructive conventional techniques which also suffer from reproducibility issues, this method allows a direct measurement of the GF locally at the nanoscale and at the wafer level. GFs have been reliably measured...
We demonstrate enhanced photoluminescence from Ge/SiGe quantum wells with strain from −0.28% (compressive) to 0.25% (tensile) achieved by epitaxial growth techniques. The intensity enhancement and peak shift from photoluminescence measurements are in agreement with theoretical calculations.
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