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In this paper, we designed a group of horizontal Hall sensors in 0.35 µm BCD (bipolar/CMOS/DMOS) technology. Compared with the existing Hall devices, the design has improvement in parts such as Hall cell parameter set and layout design under BCD technology. And then the Hall chip is taped out. The results from the precise experiment of the Hall cell verify the optimization method which can be used...
We present a Monte Carlo simulation tool to address phonon transport in silicon and silica by solving the Boltzmann Transport Equation. This tool aims to provide useful data for thermal microscopy at nanoscale where samples and tips may be of various size and shape. It enables also to predict the effect of an oxide layer or interface between similar materials. Especially, we compute the thermal conductance...
The objective of this paper is to characterize and evaluate the static and dynamic performances of 10 kV 10 A 4H-SIC MOSFETs at high temperatures. The results show good electrical performances of the SiC MOSFETs for high temperature operations. The double-pulse test results showed interesting behavior at elevated temperatures, where at turn-on the switching speeds become faster, thus turn-on losses...
This paper studies the etching process of <100> silicon wafers in Potassium Hydroxide (KOH) solution by patterning the silicon nitride with a square frame. The mutual relationship of the etching rate and temperature variation has been analysed. Particular additives like isopropyl alcohol can be added to the KOH solution to improve the smoothness of the surface plane. This smooth surface is necessary...
In the dark silicon era, a fundamental problem is: given a real-time computation demand represented by a set of independent applications with their own power consumption, how to determine if an on-chip multiprocessor system is able to respond to this demand and maintain its reliability by keeping every core within the safe temperature range. In this paper, we first present a novel thermal model for...
In this work, the analysis of analog parameters in Tunnel-FET devices is performed at high temperatures and for two different source compositions (Si and Si0.73Ge0.27). For high gate voltage, band-to-band tunneling is the dominant mechanism, and due to that, a degradation in output conductance (gD), early voltage (VEA) and intrinsic voltage gain (AV) was observed. In the SiGe devices, trap assisted...
The biosensor platform of graphene material has grown rapidly in the past few years due to their unique properties in electrical, thermal conductivity, large surface area, high fracture strength, high young modulus and biocompatibility. In this work, the chemically modified graphene oxide solutions were studied for electrical performance toward biosensor applications. The graphene oxide solutions...
Understanding the optical properties of semiconductors at terahertz (THz) frequencies is crucial to THz semiconductor characterization and applications. Prediction of the optical properties requires precise knowledge of the dielectric function of semiconductor in different environments, such as variable temperature and dopant concentration. In this work, the optical properties of silicon without and...
We demonstrate record high temperature operation, 400 °C, of an integrated Al2O3:Er3+ DBR laser on an ultra-low-loss Si3N4 waveguide platform. Additionally, the device exhibits an uncompensated temperature dependent wavelength shift of 1.92 GHz/°C and maintains over 1.5 mW of output power throughout the entire temperature range.
In our work we observe the light behavior before and after light-induced degradation of amorphous/microcrystalline (a-Si/μc-Si) tandem silicon-based solar cells. We show that during light-induced degradation the efficiency increases for illumination levels lower than standard test condition illumination. Additionally we examine the temperature coefficient of the open circuit voltage, short circuit...
Wafer level stacking of single crystal films enables 3D monolithic integration of electronic devices. The monolithic stacking technology based on Smart CutTM enables front end integration of large variety of devices with nanometer alignment capability; therefore it provides more degree of freedom for the designers and integration for high density and better performance. Several applications can fully...
The electrical properties of n+-Si/n-GaN junctions by room-temperature bonding were investigated. The n+-Si/n-GaN junctions exhibited linear current-voltage characteristics.
An accurate assessment of the temperature distribution on the surface of the battery can be instrumental in prediction of the health and remaining lifetime in the battery/battery storage unit. Close monitoring of operational conditions and health can lead to significant saving in the overall cost and reliability of the targeted application. In this paper a new method for estimation of an effective...
This paper presents an alternative architecture for a Monolithic IC Buried Zener-type voltage reference implemented on a 0.6μm BICMOS process. Low supply voltage, good power supply rejection, reduced process dependency, low Long Term Drift (LTD) with capability of an easy and effective Temperature Coefficient (TC) trim are all features of the presented architecture. Good simulated performance and...
We applied the low-temperature bounding for fabricating base/collector junctions of Si-based bipolar transistor structures. The common-base current gain of fabricated bipolar transistors increased as the ambient temperature was raised up to 165°C, which suggests that the low-temperature bounding might be useful for fabricating high-performance heterojunction devices.
A nanoimprint based approach to achieve efficient light management for solar cells on low temperature transparent polymer (PET) films is presented. The imprint-textured PET substrates show excellent light scattering properties and lead to significantly improved incoupling and trapping of the light in the solar cell, resulting in a current density of 12.9 mA/cm2, similar to that on a glass substrate...
Temperature dependent dark current voltage characteristics of p type hydrogenated amorphous silicon/intrinsic a-Si: H/n-type crystalline silicon solar cells with varying the intrinsic layer thickness are discussed to elucidate the dominant current transport phenomena in such structures. The a-Si:H films were deposited by Hot-Wire chemical vapor deposition (HWCVD) technique. The charge carrier conduction...
A high temperature ion implanter called as IMPHEAT® for SiC devices and a high temperature ion implanter called EXCEED® are developed by Nissin Ion Equipment Co., Ltd. They are based on the mainstream ion implanter of EXCEED®, a field proven tool for more than 10 years, so they are suitable for the mass production of both SiC devices and Si devices. IMPHEAT® can run 4″ and 6″ SiC devices, including...
Photovoltaic research and technology have grown exponentially in recent years due to the continuing and increasing global demand for energy. However, to be economical for global production and utilization, the efficiency of solar cells must increase without escalating manufacturing costs. Because of the abundance of silicon and vast knowledge obtained from silicon study, exhaustive exploitation of...
Recently, it has been demonstrated that CPP-GMR can be significantly boosted by incorporating new ferromagnetic (FM) full Heulser alloy into spin valve nano-structures[1-4]. Experimental results for two types of non-magnetic spacers (i) (100) textured Ag in combination with FM full Heusler alloys Co2MnSi, Co2Fe(Si-Al) [1], Co2(Mn-Fe)Si (70 % MR and DRA of about 12 mW-mm2) [2] and (ii) non-magnetic...
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