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This paper deals with comparative assessment through static and dynamic measurements performed for full SiC-based MOSFET and Si-based IGBT power modules. The full SiC-MOSFET and Si-IGBT based power modules all have an identical voltage rating of 1.7 kV and a current rating of 300 A. Full SiC-MOSFETs presents a lowest on-resistance (RON) of 10.0 mΩ, blocking voltage of 1800 V and a threshold voltage...
The Photovoltaic System is considered as one of the effective means of electrifying remote and isolated areas in today's world. This paper provides a complete optimal design to generate power using standalone PV system in the remote location of UAE. The pattern of the load is initially analyzed and the solar irradiance of the remote location near abudhabi is taken from the RET simulation software...
Reliability is a critical feature of chip integration and unreliability can lead to performance, cost, and time-to-market penalties. Moreover, upcoming Many-Core System-on-Chips (MCSoCs), notably future generations of mobile devices, will suffer from high power densities due to the dark silicon problem. Thus, in this paper, a novel NoC-based MCSoC architecture, called Shift Sprinting, is introduced...
InGaAs FinFETs with sub-10 nm fin widths were fabricated for the first time using precision dry etching and digital etch. We find that the threshold voltage, Vt, becomes highly sensitive to the fin width, Wf, in the sub-10 nm Wf range. 2D Poisson-Schrodinger simulations suggest that this is due to quantization effects. We also show that in the quantum regime, a sidewall slope below 850 significantly...
A simple and low cost method to produce well aligned silicon nanowires at large areas using metal assisted chemical etching at various temperature were presented. The high aspect ratio structure of silicon nanowires growth by anisotropic wet etching method was observed. Prior to the etching, the formation of silicon nanowires was by metal assisted chemical etching (MACE) in solution containing hydrofluoric...
Since the successful introduction in the Western economic area of Atomic Layer Epitaxy (ALE) by Suntola's team [1] the technique more extensively known as Atomic Layer Deposition (ALD) has been slowly gaining acceptance in the field of thin film deposition [2]. There are many benefits of ALD, however, in terms of deposition rates and management of reactive gas species in complex 3D structures (such...
This paper presents a methodology to establish and qualify safe bounds of operation for Silicon Carbide power devices under avalanche stress. The methodology involves using a statistical method to estimate an avalanche safe operating area, and by ensuring that device reliability is not degraded after avalanche stress. We also demonstrate the avalanche capability of the C3M 900V SiC MOSFETs, which...
Wide bandgap semiconductor devices like SiC have achieved more and more attentions in electric vehicles-(EVs) because of their high-temperature capability, high-power density, and high efficiency. As all known, EVs frequently operate in acceleration, deceleration and low speed driving in urban traffic. Thus, not only the rated operation condition should be considered, but also some extreme operation...
This paper introduces the power-density and temperature induced issues in the modern on-chip systems. In particular, the emerging Dark Silicon problem is discussed along with critical research challenges. Afterwards, an overview of key research efforts and concepts is presented that leverage dark silicon for performance and reliability optimization. In case temperature constraints are violated, an...
This paper presents a non-contact measurement of irradiance on plane of array (POA) and cell temperature for PV systems. The idea is motivated from the diode model of PV, where POA irradiance and cell temperature are proportional to the photocurrent and modified ideality factor, respectively. Based on the recent progress of diode model identification, the photocurrent and modified ideality factor...
A important challenge of tunneling field-effect transistors (TFETs) is to realize both low SS of sub-60 mV/dec. and high drain Ion/Ioff ratio at the same time [1, 2], which strongly demands the optimization of materials, structures and fabrication process. For this purpose, the choice of source/channel materials with the reduced (effective) band gap is important for increasing tunneling current with...
The temperature's anomaly for the Boyaca department ranged from −0.2°C to 1°C proving that the Universal Kriging interpolation methods was the best option by including parameters how altitude levels.
In this article an investigation is presented, where factors influencing temperature and humidity ariables in a temperature controlled chamber are analyzed. The objective of this study is to determine whether the humidity can be controlled independently of temperature in order to implement a change in the system to stabilize the relative humidity. After showing the theoretical background, the changes...
There are three important parameters in solar photovoltaic (PV) panel performance, namely maximum output power, short-circuit current, and open-circuit voltage. All these parameters are affected by temperature fluctuations. This research is focused on the behaviour of a mono-crystalline solar PV panel under different temperatures using experimental work and the results are validated with a corresponding...
Opto-electrical characteristics of Si-based blocked-impurity-band (BIB) detector are investigated by combing experiment with simulation. The measured black-body response characteristics at different temperature are discussed. The simulated dark current characteristics with different thicknesses of blocking layer are also presented by taking into account impurity-band effects.
After the golden era of silicon, nowadays compound semiconductors from III-V group is extensively studied to observe their application in electronic as well as in other field. Solar cell which is providing alternative source in our industries, houses and laboratories. Researchers are now trying to find out new features by using these inorganic materials based solar cell which can easily be paved the...
The temperature and dV/dt dependence of false turn-ON has been analyzed for Silicon Carbide (SiC) Unipolar and Silicon Bipolar transistors, with switching rates varied by the gate resistances while temperature is varied by a hot plate connected to power modules. Self-heating is also investigated by measuring the temperature rise of the modules at high switching frequencies (8 kHz). This has resulted...
This paper presents promising current-voltage characteristics of semiconductor-insulator-graphene tunnel diodes as the hot-electron injection unit in graphene base transistors (GBTs). We propose that by using a bilayer tunnel barrier one can effectively suppress the defect mediated carrier transport while enhancing the hot-electron emission through Fowler-Nordheim tunneling (FNT) and step tunneling...
A framework for the simulation of nanosecond laser annealing of structures found in 3D sequential integration is presented. The framework includes a finite difference frequency domain Maxwell solver and a Poisson solver for the thermal diffusion. Simple applications illustrate the advantages, expected difficulties and optimization levers of this annealing technique.
We investigated wavelength-control-characteristics of a silicon photonic transmitter employing heater-integrated silicon micro-ring-modulator and flip-chip integrated CMOS driver. A novel wavelength control successfully demonstrated error-free operation at 25 Gbps during wide-package-temperature cycle between 20 and 60ºC for the first time.
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