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Over the last few decades, advances in electronics have fundamentally changed the way we use energy in our everyday life. While the electronic devices have become faster, smarter and compact, the energy consumption for per bit operation have not reduced significantly. With the motivation to reduce energy consumption in electronic systems, we study layered transition metal dichalcogenides (TMDs), which...
Superconducting computing has recently emerged as a potential solution for energy-efficient, large-scale computing. Problems in large-scale computing are reviewed. Superconducting computing is significantly different from conventional technologies and required a feasibility study [1] to evaluate its potential. Concepts were investigated for computing systems capable of performance in the range from...
Since a microelectromechanical (MEM) switch with an electrostatically actuated cantilever was first demonstrated by Petersen in 1978 [1], MEM switches and nanoelectromechanical (NEM) switches have actively been researched so far by many research groups. This is because they are considered as one of the ideal switching devices, thanks to their ideal zero leakage characteristic, nearly infinite sub-threshold...
The emergence of novel mechanisms for magnetization switching in nanostructures provides new opportunities for developing ultralow-power and high-density memory and logic circuits. Hence, while magnetoresistive random access memory (MRAM) based on spin transfer torque (STT) has already entered the commercialization stage, there is a growing interest in new device concepts based on emerging mechanisms...
Interconnects accounts for a significant portion of energy consumption in integrated circuits. Optical interconnects, now widely used to link electronic systems such as servers and top of rack switches in data centers, can potentially reduce the energy consumption of electrical interconnects. However, current state-of-the-art optical links consumes about 100s fJ/b to 1 pJ/b, still much too high for...
Today Tunnel FETs are perceived as the most promising small slope transistors, that may enable a significant decrease in the power supply of integrated circuits and thus an improvement of their energy efficiency. However, many experimental results largely differ from the simulations of ideal Tunnel FETs, in fact simulations report small sub-threshold swing (SS) values over several orders of magnitudes...
Next-generation information technologies will process unprecedented amounts of loosely-structured data, including streaming video and audio, natural languages, real-time sensor readings, and contextual environments. These newly available data far exceed the processing capacity of existing computing architectures.
We have been following the dictum of Moore's Law for longer than most engineers have been alive. We're used to it, we know how to do it, and its focus on functionality, performance, and economics has yielded remarkable systems, from today's smartphones to supercomputers and internet servers, to engine controllers, anti-lock brakes, airbags, and the navigation systems in our vehicles. But software...
In modern computers computation is performed by assembling together sets of logic gates made by transistors acting as logic switches. The scaling of transistor dimensions allowed a continuous increase of performance accompanied by an increase of heat production. The latter will represent a road-block for the development of future computing devices. Landauer theorized on the minimum heat production...
Ballistic electron conduction offers a new possible approach to the development of low-power high-speed logic circuits [1-3]. Ultra-high mobility of graphene allows achieving the ballistic or near-ballistic transport regime at room temperature (RT) in devices with relatively long channels [4-5]. In this presentation, we show that heterostructure field-effect transistors (HFETs) with graphene channel...
Tunneling field-effect transistors (TFETs) have been investigated as a low-voltage replacement for the conventional field-effect transistor with a turn-on response steeper than 60 mV/dec. However, to date no device has achieved a steep turn-on at low voltage with an on-off ratio of 106 or greater. Among the main issues is the finite density of states inside the semiconductor bandgap arising from a...
Layered semiconductors, such as transition metal dichalcogenides and black phosphorous, represent a new class of electronic materials exhibiting unique physical and chemical properties. Of particular interest for tunneling transistors (TFETs) is their inherently uniform thickness at the atomic scale arising from their layered structure. This property, theoretically leads to sharp band edges, which...
Designing hardware specialized for a target application domain dramatically improves energy efficiency. However, the design of specialized hardware is hampered by high cost, dominated by the effort needed to design, validate, and verify the custom integrated circuit. An agile design approach, discussed here, relies on hardware generators coupled with rapid design of iterative prototypes and open source...
Emerging electronic devices utilizing spin based effects and phenomena, such as spin transfer torque magnetic random access memory (STT-MRAM), have gathered a great spectrum of effort, ranging from basic scientific research to technology development [1][2][3][4]. In this talk, we present a novel all spin logic circuits, referred to as mLogic, based on a four terminal device, referred to as mCell,...
Today's electronic photonic integration approaches involve various trade-offs between integration complexity, cost and performance, with no single approach being able to satisfy both the high-performance and low cost/complexity requirements. Luxtera's process [1] represents monolithic integration, which has low parasitics and customized photonics but slow transistors. Oracle's [2] and ST Micro [3]...
III-V Hetero-junction Tunnel FET (HTFET) are promising candidates for supply voltage scaling down to sub-0.5V due to their promise of sub-kT/q switching without compromising on-current (ION). Recently n-type III-V HTFET with reasonable ION and sub-kT/q switching at VDS=0.5V have been demonstrated [1]. However, steep switching performance of III-V HTFET till date has been limited to range of drain...
Increasing data interconnect densities and rates drive the requirements for optical high-speed interfaces to ASICs (e.g. network switches, routers, CPU's). In contemporary implementations, as illustrated in Figure 1a, optical transceivers (such as SFP and QSFP modules and AOCs) are located at the card edge. In such an architecture increasing data rates aggravate electrical signal integrity issues...
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