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In this study, we have grown cubic InN (c-InN) nano-scale dot arrays using MgO (001) vicinal substrates (3.5 deg. off from (001) toward [110]) by molecular beam epitaxy. The obtained dot arrays have longer ordering length (>1 um) compared with those grown on MgO (001) just substrates. By using MgO (001) vicinal substrates, the structure of cubic GaN (c-GaN) underlayer changed from a mixture of...
We report a novel thin-film flip-chip (TF-FC) c-plane GaN LED design grown on bulk GaN. By way of a photoelectrochemical (PEC) undercut etch, LEDs are transferred from a bulk GaN substrate to a sapphire submount. As a first demonstration, the resulting LEDs have threshold voltages below 3V and a peak external quantum efficiency (EQE) of 8.4% at a wavelength of 471 nm. These results are of LEDs without...
GaN-based devices are of increasing importance for a wide range of system applications, such as power conversion and control, displays, and sensing in harsh environments. While dramatic progress in material quality and device performance has been achieved, several key impediments to the widespread adoption of GaN remain, including the high cost of native GaN substrates (needed to achieve low dislocation...
Acidic ammonothermal method is one of the most promising techniques which enable the mass production of large diameter bulk GaN crystal. State-of-the-art high-power light-emitting diodes and laser diodes are usually fabricated on GaN substrates grown by hydride vapor phase epitaxy. However, to realize vertically conducting high-power GaN switching devices, bowing-free large-diameter GaN substrates...
Photoluminescence properties of gallium nitride-based thin films directly grown on an amorphous quartz glass substrate are investigated. The films are grown by a molecular beam epitaxy apparatus having dual radio-frequency nitrogen plasma cells. Effects of impurity doping, and/or a small amount of indium incorporation by simultaneous operation of the dual nitrogen plasma cells on the photoluminescence...
A large lattice-mismatch induced stress control technology with a low Al content AlGaN layer has been used to grow high quality GaN layers on Si substrates. The use of this technology allows for high mobility AlGaN/GaN heterostructures with electron mobility of 2240 cm2/Vs. It is demonstrated that the large lattice mismatch between the low Al content AlGaN layer and AlN buffer layer could effectively...
The fundamental possibility of the MBE GaN nanowires growth on silicon substrate with nanoscale buffer layer of silicon carbide has been demonstrated for the first time. Morphological and spectral properties of the resulting system have been studied and compared properties of GaN nanowires on silicon substrate.
In this paper the high voltage (220 V) lateral Schottky barrier diodes (SBD) based on AlGaN/GaN heterostructure grown by Metal Organic Chemical Vapor Deposition (MOCVD) on silicon substrate are presented. A low turn-ON voltage (<0.7 V), low specific ON-resistance (RON, SP) (1.79 mΩ·cm2) and a high reverse breakdown voltage (UBV) (220 V) were simultaneously achieved in devices with 7μm anode-cathode...
Lateral GaN transistors on Si substrates operating at voltage below 650 V are commercially available today. The main drawback of this lateral geometry is that the transistor area (and, therefore, its cost) is proportional to the breakdown voltage. In addition, numerous material interfaces are exposed to high electric fields, which reduces reliability and prevents avalanche breakdown. For higher-voltage...
This work presents results of investigations of lateral and vertical Schottky diodes based on Molecular Beam Epitaxy (MBE) grown GaN/AlGaN heterostructures. We have used plasma assisted molecular beam epitaxy in metal rich conditions on freestanding GaN commercial substrates and GaN/sapphire heterosubstrates. The optimized technological procedures have been used to avoid parasitic conduction channels...
Ultra-thin body pseudomorphic GaN-on-Insulator Quantum Well FETs with MBE-regrown contacts have recently been realized as a fundamentally new strategy to create GaN CMOS-like technology that can support scaling down to ∼10 nm, similar to UTBSOI [1]. The demonstration vehicle [2] used AlN-on-Sapphire templates, which have a large lattice mismatch with thick AlN layers, and very poor thermal conductivity...
This paper reports that the unclamped inductive switching (UIS) withstanding capability of high voltage GaN-HEMTs depends on the gate voltage at off-state and the substrate connection. The relation between the UIS withstanding capability and the electrical potential at gate and substrate is discussed by the results of the UIS test for GaN-HEMTs with p-type gate structure. Conclusively, the mechanism...
In this paper, we demonstrate 1.2 kV-class vertical GaN trench MOSFETs fabricated on a bulk GaN substrate with high current and switching operations. The fabricated multi-cell MOSFET achieved a blocking voltage of 1.3 kV by using a field-plate edge termination around an isolation mesa. The MOSFET chip with the size of 1.5 mm × 1.5 mm operates at current rating of as high as 23.2 A with fast switching...
The models for investigating the phase diagram of InGaN thin films have been anticipated by considering the effects of strain energy, the self-energy of misfit dislocations and surface energy to Gibbs free energy. Total Gibb's free energy varies with Indium composition and thickness of the epitaxial thin film. The calculated results indicate that over critical thickness, energy of the films increases...
Three-dimensional heterostructured AlGaN/GaN ultraviolet (UV) photodetectors were microfabricated using V-grooved silicon(111) surfaces and metal organic chemical vapor deposition. This novel sensor platform enabled an increase in sensitivity and operation at high temperatures (up to 200°C). More specifically, texturizing the highly conductive 2-D electron gas using the V-groove sensor surfaces, resulted...
Using GaN-on-Si epilayers, for the first time, fully vertical p-i-n diodes are demonstrated after Si substrate removal, transfer, and n-electrode formation at the top of the device. After SiO2 sidewall passivation, the vertical p-i-n diodes, with n-GaN facing up, exhibit $V_{{\mathrm{\scriptscriptstyle ON}}}$ of 3.35 V at 1 A/cm2, a low differential on-resistance of 3.3 $\text{m}\Omega $ cm2 at...
Discrete gallium nitride high electron mobility transistors (HEMTs) are fabricated on oriented silicon, then undercut and assembled onto non-native silicon CMOS wafers by elastomer stamp micro-transfer-printing. The thin, less than 5 µm thick, gallium nitride transistors were then electrically interconnected using conventional thin-film metallization processes. Electrical measurements reveal that...
The rapid development of gallium nitride (GaN)-based wide bandgap power devices has been stirring power electronics industry for almost a decade. Advanced packaging solutions are eagerly needed to exploit the maximum potential of the high performance GaN semiconductors. Especially for devices in the cascode configuration, the design and fabrication of a suitable package are very challenging for high-frequency,...
Gallium Nitride (GaN), along with other III-Nitrides, is attractive for optoelectronic and electronic applications due to its wide direct energy bandgap, as well as high thermal stability. GaN is transparent over a wide wavelength range from infra-red to the visible band, which makes it suitable for lasers and LEDs. It is also expected to be a suitable candidate for integrated nonlinear photonic circuits...
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