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This paper elucidates the details of exciton localization dynamics in InGaN/GaN and GaN/AlInN quantum wells (QWs) using Monte Carlo simulation for a wide range of temperatures (10–300 K). We find that the phonon-induced variation of exciton lifetimes has remarkable effects on the photoluminescence (PL) peak position and the line-width. The red-shift of PL peak position at high temperature is clarified...
The optical properties of one dimensional (1D) structures are dominated by the excitonic behaviour which are formed by optical absorption. The excitonic properties in III-nitride based cylindrical quantum wires (QWRs) have been investigated theoretically. The confinement of the electron and the hole is subjected for the peculiarities of the exciton in a QWR where confinement of the particles can be...
The models for investigating the phase diagram of InGaN thin films have been anticipated by considering the effects of strain energy, the self-energy of misfit dislocations and surface energy to Gibbs free energy. Total Gibb's free energy varies with Indium composition and thickness of the epitaxial thin film. The calculated results indicate that over critical thickness, energy of the films increases...
The parameters that influence the performance of solar cell, minority carrier lifetime is a crucial one. The increase of minority carrier lifetime results in higher conversion efficiency. Minority carrier lifetime is determined and analyzed for InGaN single junction solar cell at different excess carrier concentrations by considering the effect of radiative, Auger, Shockley-Read-Hall (SRH) and surface...
p-InGaN epitaxial layer is crucially important for advanced electronic and optoelectronic devices. The activation energy (EA) of Mg-acceptor, universally accepted p-type dopant, and hole concentration (p) of Mg-doped InxGa1−xN alloys (x∼0.4) have been investigated herein. The EA has been calculated using an equation almost fitted with experimental data available in literatures in which EA decreases...
In this paper the barrier height control of n-type InGaN has been demonstrated by a simple physics based unified model. Metal induced gap states (MIGS) model for metal-semi-conductor contact has been extended to metal-insulatorsemiconductor (MIS) contact for unpinning of Fermi level and low contact resistivity formation. Metal/n-In0.2Ga0.8N contact is strongly pinned with a pinning factor value of...
It is imperative to determine the dependence of the quality and characteristics of the epitaxial film on different growth parameters. A mathematical model has been developed showing the effect of different growth parameters e.g. temperature, TMI and TEG flow rate, molar ratio on epitaxial film. This model is considered for InGaN film on GaN template with an Indium mole fraction up to 0.4 by Metal...
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