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It is envisioned that future 5G wireless links will extensively employ multiple mm-Wave spectra (e.g., 28GHz, 37GHz, 39GHz, and 70GHz). A major bottom neck for silicon-based mm-Wave electronics lies in the generation of mm-Wave signals with high energy efficiency, high linearity, and large modulation bandwidth, all of which are indispensable to support Gbit/s complex modulations with large peak-to-average-power...
This paper presents a quantitative evaluation of the power efficiency decrease obtained by breaking the zero-current switching (ZCS) condition due to the alternate output occurring in a bi-level quadrature-modulation (QM) envelope-pulse-width-modulation (EPWM) transmitter. The power efficiency is evaluated by changing the Q factor of the series resonance circuit inserted in a power amplifier (PA)...
A new family of hybrid stacked power amplifiers (named as ‘Class-K’) are presented where each of the series stacked transistors can operate independently as different class of switching amplifiers. The voltage and current waveforms of the stacked transistors are shaped by independent harmonic load networks connected to the collector nodes of each of the stacked HBTs. A properly-designed Class-K amplifier...
This review paper covers the basic principles, architectures, and representative results related to millimeter-wave silicon power amplifiers and transmitters. Effects of technology on the performance metrics of linear and switching power amplifiers as the frequency increases to the mm-wave regime are demonstrated. Methods that can enhance the output power, namely various power combining schemes as...
In this paper, a packaged F-band transmitter in CMOS 65 nm technology is presented. The integrated circuit is based is based on a x9 active multiplying chain from Ku-band to F-band. The circuit was packaged and connectorized demonstrating the possibility of using wire-bonds around 130 GHz with low insertion loss. The microstrip-to-waveguide transition developed introduces insertion loss below 1 dB...
This paper presents the design and measurements of a 216GHz, 0.5mW transmitter using 65nm bulk CMOS process. The transmitter is formed of an amplifier-multiplier chain, where the power amplifier delivers a Psat =16dBm at 110GHz to a passive frequency doubler. The PA stage employs a novel single-ended to 2-way differential power combiner based on vertically coupled transmission lines. A passive frequency...
Integration of RF power amplifier (PA) in CMOS technology can help to reduce total solution cost and achieve small form factor in modern communication systems. To improve overall efficiency of the power amplifier supporting modulated signals with very high peak-to-average power ratio (PAPR), new transmitter and PA architectures are being explored by researchers. This paper reviews some of our recent...
This paper proposes an efficient envelope delta-sigma based transmitter architecture with gate bias modulation for modern wireless communication systems. Using this architecture, envelope varying signals are converted to constant envelope signals. The constant envelope phase signal is up-converted and amplified utilizing high efficiency power amplifier, while the two level delta-sigma modulated envelope...
In this paper a packaged X-band to W-band x9 active multiplying chain in CMOS 65 nm technology is presented. The integrated circuit was packaged and connectorized to allow FMCW Radar system operation. Wire bonds and a microstrip-to-waveguide transition were used at the output. On-chip probing showed a maximum output power of +9.7 dBm, a 3 dB bandwidth of 13% (86–98 GHz) while consuming 280 mW of DC...
A W-band transmitter with high saturation output power in 90-nm CMOS has been presented in this paper. Transformers are used extensively in the power amplifier and the mixer to facilitate compact power combining, impedance matching networks, and DC feed. The transmitter provides saturation output power of 11.3 dBm with a power consumption of 237 mW. The peak conversion gain is 14.8 dB and the 3-dB...
A 60 GHz transmitter front-end with built-in temperature sensor is designed and measured using 90nm digital CMOS process. This transmitter front-end integrated into a transceiver delivers the best performance of +11dBm saturated output power with more than 13dB conversion gain using digital CMOS process at 63 GHz. The built-in temperature sensor achieves a resolution better than 5°C in the temperature...
This paper presents a bi-level quadraturemodulation (QM) low-pass (LP) envelope-pulse-widthmodulation (EPWM) transmitter using a half side of tri-level EPWM. Simulation including digital signal processing with the QM LP-EPWM and microwave circuit simulation with a class-D power amplifier (PA) using n-MOSFETs shows an excellent error vector magnitude (EVM) of 36 dB at 1 GHz. The transmitter with a...
This paper describes a fully integrated E-band transmitter (TX) in 40-nm CMOS. Circuit, layout and calibration techniques are presented to suppress the LO feed-through (LOFT) and I/Q imbalance over both 71–76 and 81–86 GHz bands. A systematic design methodology is proposed for the millimeter-wave poly-phase filter (PPF) to achieve lowest I/Q imbalance with minimum EM simulations. The 40-nm E-band...
This paper studies the impact of bandwidth limitation on the linearity of multilevel LINC (ML-LINC) transmitter. By using the signals with discrete levels for characterisation, both amplitude and phase dispersions around levels can be observed, which result in the degradation of system linearity. It is also shown that improvement on both adjacent channel leakage ratio (ACLR) and error vector magnitude...
This paper describes a novel concept to encode amplitude and phase information in binary waveforms for switch-mode power amplifiers (SMPAs). A combination of a phase-modulated delta-sigma modulation (DSM) and pulse-width modulation (PWM) makes it possible to adapt signal generation to the power amplifier limits. The proposed system overcomes the inherent signal quality limits of digital systems with...
This paper studies the impact of bandwidth limitation on the linearity of multilevel LINC (ML-LINC) transmitter. By using the signals with discrete levels for characterisation, both amplitude and phase dispersions around levels can be observed, which result in the degradation of system linearity. It is also shown that improvement on both adjacent channel leakage ratio (ACLR) and error vector magnitude...
This paper describes a novel concept to encode amplitude and phase information in binary waveforms for switch-mode power amplifiers (SMPAs). A combination of a phase-modulated delta-sigma modulation (DSM) and pulse-width modulation (PWM) makes it possible to adapt signal generation to the power amplifier limits. The proposed system overcomes the inherent signal quality limits of digital systems with...
In this paper the design of an ultra low power transmitter in MICS/ISM band has been presented. The transmitter uses Frequency Shift Keying (FSK) as the modulation scheme. At the heart of the transmitter is an oscillator whose frequency is periodically calibrated. A ring type oscillator has been considered instead of LC type as it reduces the buffer power consumption immediately following the oscillator...
This paper presents a new approach to improve the accuracy of power amplifier or transmitter characterisation. Compared to traditional characterisation, an iterative characterisation approach using realistic excitation signals is introduced. Based upon this approach, more accurate nonlinear behaviour for AM/AM and AM/PM can be measured. A memoryless piecewise digital predistortion (DPD) model using...
This paper proposes an iterative calibration technique to enhance the linearity for multilevel LINC transmitters. With this approach, the precision of characterising AM/AM and AM/PM behaviours for discrete levels can be improved, which results in better adjacent channel leakage ratio (ACLR) and error vector magnitude (EVM) performance. An ML-LINC transmitter is built with two PAs in GaN technology,...
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