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Electro-migration behavior in fine pitch SnBi eutectic solder bump interconnections were investigated. In the case of fine pitch SnBi eutectic solder bump (dia. 25 micro meter), maximum increasing-rate of resistance was significant less than that of larger seized bump structure (Dia. 75 micro meter).
There has been a great discussion about electro-migration behavior in semiconductor area. And it has been often discussed that electro-migration behavior of the flip chip package using Sn-Ag bump. However, little study has been done to explore the electro-migration behavior of low temperature solder such as a Sn-Bi solder. In this report, we investigated electro-migration behaviors of micro pillar...
In this paper, the characteristics of eutectic Sn–Bi microsolder bumps fabricated by electroplating are investigated. The underbump metallization (UBM) layers on a Si chip consist of Al, Cu, Ni, and Au, sequentially from bottom to top. The desired Sn–Bi bump size has a diameter of 22 and pitch of 44 . In order to obtain the optimal conditions for the eutectic Sn–Bi solder bumps,...
Sn-Bi alloys were electroplated from sulphuric acid based plating baths containing tin sulfate (SnSO4) and bismuth nitrate (Bi(NO3)3). The electrochemical behavior of the plating bath was investigated by electrochemical studies. Potentiodynamic polarization curves of the plating bath revealed the large potential gap between the two elements. The effects of SnSO4 concentration and current density on...
The effects of an antioxidant, hydroquinone (HQ) and a grain refining additive, gelatin, on the electroplating characteristics of SnBi alloys were investigated. Methane sulfonic acid (MSA) based plating baths with varying contents of additives are prepared and the electrochemical behavior of each bath was investigated. Cathodic polarization studies showed that the presence of HQ possesses insignificant...
In this report, we investigated electro-migration behavior of two types of low temperature bonding. One was Sn-57 Bi using conventional C4 process. The other was Au-In Transient Liquid Phase bonding (TLP). Electron flow to induce the electro-migration was from substrate side (Ni pad) to chip side (Cu post) with current density of 40000A/cm2 at 150 degree C. In the case of Sn-57 Bi conventional C4...
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