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SPlCE-compatible modeling with generalized lumped devices is used to simulate the spatial and time dependence of photogenerated carriers with standard circuit simulators. Equivalent voltages and currents are used in place of minority carrier excess concentrations and minority carrier currents respectively. The initial light-induced excess carrier concentration in silicon is accounted by means of distributed...
In this paper, Si Schottky-barrier diodes (SBD's) fabricated in CMOS process are shown to be suitable for THz imaging applications. We firstly present a physical-based equivalent circuit model for Si Schottky diodes fabricated by standard 130nm CMOS technology in which I-V, C-V and RF performance are covered. Secondly, the developed transmission Line (TL) model are employed to optimize T-type matching...
e-CPI has emerged as a new risk in modern chip design as silicon dies become increasingly thinner and packages become increasingly more complex. e-CPI is different from traditional mechanical reliability related chip-package interaction, as it focuses on package stress impact on electrical circuit performance. A complete e-CPI modeling flow has been demonstrated. Both package FEA models and silicon...
The Quasi-3D allows to drastically speed up TCAD and mixed-mode simulations of finFET technologies, by solving on well-chosen 2D finFET cross sections. The method accurately reproduces important transistor metrics requiring only 1/20th of the simulation time.
Modeling parasitic parameters of Through-Silicon Via (TSV) structures is essential in exploring electrical characteristics such as delay and signal integrity (SI) of circuits and interconnections in three-dimensional (3D) Integrated Circuits (ICs). This paper presents a complete set of self-consistent equations including self and coupling terms for capacitance of general multi-TSV structures. The...
The description of thermal non-uniformity in large area power MOSFETs requires the modeling of a thermal network to account for the thermal interaction between adjacent devices. In this work we propose a methodology to derive a thermal network which is able to predict the thermal transient as a function of the longitudinal distance from the heat source. The network is calculated by assuming cylindrical...
A wide-band lumped element model for a through silicon via (TSV) is proposed based on electromagnetic simulations. Closed form expressions for the TSV parasitics based on the dimensional analysis method are introduced. The proposed model enables direct extraction of the TSV resistance, self-inductance, oxide capacitance, and parasitic elements due to the finite substrate resistivity. The model's compactness...
This paper presents modeling ballistic double gate MOSFETs by a neural network approach. A complete neural network structure is proposed to model the double gate characteristics. To confirm the accuracy of the proposed network, the drain current characteristics are compared to the nanoMOS device simulator data. The comparison shows excellent agreements with percentage errors lower than 1% over a range...
This paper proposes an equivalent lumped element model for various multi-TSV arrangements and introduces closed form expressions for the capacitive, resistive, and inductive coupling between those arrangements. The closed form expressions are in terms of physical dimensions and material properties and are driven based on the dimensional analysis method. The model's compactness and compatibility with...
A new methodology to bridge package and silicon domain simulations is demonstrated using a new data file to facilitate stress information exchange. The flow integration uses equivalent stress conditions to replace sensitive process information and parameterized modules to minimize user interventions for 3D IC stress simulations.
GaN based devices offer many perspectives for power conversion applications. To demonstrate the capabilities of III-nitride components, we studied the switching behavior of a GaN DHFET device. We show that the combination of a low input capacitance, a low on-resistance and a high breakdown voltage is the key advantage for GaN components. Moreover the possibility to grow GaN on Si substrates allows...
As the integration level of power electronics equipment increases, the coupling between multi-domain physical effects becomes more and more relevant for design optimization. At the same time, virtual analysis capability acquires a critical importance and is conditioned by the achievement of an adequate compromise between accuracy and computational effort. This paper proposes the compact model development...
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