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A 2×2 MIMO(multi-input multi-output) for m-WiMAX (IEEE 802.16e) / WLAN (IEEE 802.11n), multi-mode / wideband transceiver system was developed. To design the transceiver system, the RF architecture was redesigned for the overall system, and a MIMO antenna, quad-band switchable front-end module (FEM), and reconfigurable RFIC were developed. Using embedded PCB technology, the transceiver system was integrated...
The trade-off between insertion loss and isolation in RF antenna switches is critical for RF communication systems. Possible improvement through circuit design is limited. The implementation of RF antenna switch using an optimized technology or an innovative device architecture could be the solution to achieve better insertion loss and isolation. The dynamic threshold MOSFET is presented here as one...
Robustness and reliability of an embedded RF-MEMS switch are analyzed. Changes of key switch parameters, such as COFF, CON, and pull-in voltage, with the ambient temperature are investigated in the range of -30°C to 150°C. The biggest temperature effect, a decrease by a factor of 2 between -30°C and 150°C, is observed for COFF, while CON weakly increases...
In this paper an overview of different RF BDSMs at 450 MHz, 900 MHz, and 2.14 GHz is presented. The BDSMs were specifically designed for use in Class-S transmitters. Different BDSM architectures are discussed and implemented with the goal to reduce the BDSM clock frequency and hence the PA switching speed requirements. The BDSMs are realized as continuous-time 1-bit bandpass delta-sigma modulators...
An RF-MEMS capacitive switch for mm-wave integrated circuits, embedded in the BEOL of 0.25 ??m BiCMOS process, has been characterized. First, a mechanical model based on Finite-Element-Method (FEM) was developed by taking the residual stress of the thin film membrane into account. The pull-in voltage and the capacitance values obtained with the mechanical model agree very well with the measured values...
A single-pole double-throw novel switch device in 0.18 ??m SOI complementary metal-oxide semiconductor (CMOS) process is developed for 0.9 Ghz wireless GSM systems. The layout of the device is optimized keeping in mind the parameters of interest for the RF switch. A subcircuit model, with the standard surface potential (PSP) model as the intrinsic FET model along with the parasitic elements is built...
Microelectromechanical Systems (MEMS) for radio frequency (RF) applications or RF MEMS provides an opportunity to revolutionize the wireless communication. This paper describes the Performance of low loss Fixed-Fixed RF MEMS capacitive switch at higher frequencies. Many researchers focus on RF MEMS capacitive switch, which presents good performance at microwave frequencies. Modelling of RF MEMS devices...
Silicon-on-sapphire (SOS) was invented in 1961 and as such is the first of the SOI technologies. Its original purpose was to provide radiation tolerant circuits for satellites and missiles. Now, SOS is ready to displace gallium arsenide (GaAs) as the technology of choice for RF communications in commercial applications. What are the reasons for this? In this paper, I will share what we have learned...
A new means for accurate characterization of substrateless frequency selective surfaces (FSS) was demonstrated with numerical approaches. The RF Schottky diodes model loaded active doubly periodic flat strip FSS acts as a dynamic screen, in which its surface reflectivity and transmittivity can be switched alternately and tuned through d.c. bias voltage control. The characteristic response of a layer...
This paper presents a high conversion gain folded mixer for a 2~11 GHz WiMAX system with 20 MHz IF output signal. The simulated conversion gain is ranged from 18.9 to 21.5 dB for the full bandwidth. The simulated NF is 13.5 to 17.6 dB with 0.2 to 4.4 dBm IIP3. The folded mixer is designed and fabricated in TSMC 0.18 mum RF CMOS technology with 1.8 V VDD and 1.5 V VRF supply voltage. The DC power consumption...
We describe a 0.18/0.5 um RF CMOS thick Silicon-On-Insulator (SOI) technology built on high resistivity (1 kOhm-cm) substrates. A high performance/high power RF MEMS contact switch can also be integrated in the technology through above-IC post-processing. This RFCMOS/MEMS integrated technology provides a platform for cost-effective monolithic integration of several RF RX/TX functions for next generation...
In this paper we propose a design using both a microprocessor and light sensors for automatic room light detection and control. Our design, the HLCM (Home Light Control Module) which will be installed in every light fixture of a family, is made up of four blocks: the pyroelectric infrared (PIR) sensor circuit, the light sensor circuit, the microprocessor and the RF module. By using the PIR sensor...
In the competitive market of RFICs, components test plays a key role. In order to reduce the critical factor time to market, the main objective is to test the most products possible in the least amount of time, for the lowest cost and the highest accuracy. Automated tests help reaching this goal, for example for LNA/PPA measurements. A fully automated modular test system in industrial environment...
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