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In this work, we statistically examine the emerging high-κ/ metal gate work-function fluctuation (WKF) induced threshold voltage (Vth) fluctuations in 16-nm-gate MOSFET devices. Our Monte-Carlo model extensively evaluates the impact of WKF for different technology node, metal grain size, and gate material. This model provides us to identify suitable materials and fabrication processes that can significantly...
This work, for the first time, estimates the influence of intrinsic-parameter fluctuations consisting of the metal-gate work-function fluctuation (WKF), the oxide-thickness fluctuation (OTF), the process-variation effect (PVE), and the random-dopant fluctuation (RDF) on 16-nm-gate complementary metal oxide semiconductor (CMOS) devices and circuit. Experimentally calibrated 3D device / circuit coupled...
In this study, a three-dimensional “atomistic” coupled device-circuit simulation is performed to explore the impact of process-variation-effect (PVE) and random-dopant-fluctuation (RDF) on static noise margin (SNM) of 16-nm complementary metal–oxide–semiconductor (CMOS) static random access memory (SRAM) cells. Fluctuation suppression approaches, based on circuit and device viewpoints, are further...
This paper presents a high conversion gain folded mixer for a 2~11 GHz WiMAX system with 20 MHz IF output signal. The simulated conversion gain is ranged from 18.9 to 21.5 dB for the full bandwidth. The simulated NF is 13.5 to 17.6 dB with 0.2 to 4.4 dBm IIP3. The folded mixer is designed and fabricated in TSMC 0.18 mum RF CMOS technology with 1.8 V VDD and 1.5 V VRF supply voltage. The DC power consumption...
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