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In this paper, for a silicon-based fan-out package, through the method of finite element simulation, simulated the distribution of residual stress of the passivation layer after curing process, and analyzed the influence of the change of filling rate and the chip thickness to the passivation layer stress. The simulation results show that the maximum stress distribution on the passivation layer fill...
By simultaneously considering the enhancement of quantum confinement on the effective bandgap and minimum transition energy, the silicon (Si)/ silicon carbide (SiC) quantum dot superlattice (SiC-QDSL) with aluminum oxide (Al2O3-QDSL) passivation layer shows the high short-circuit current (Jsc) of 4.77 mA/cm2 in theoretical, which agrees with the Jsc of 4.75 mA/cm2 obtained in the experiment under...
Direct metal bonding is a preferred fine-pitch technology for stacking of Si dies in 3D integration. Cu is a metal of choice for direct metal bonding because it is the most common metal for redistribution layer in advanced semiconductor manufacturing, Cu has high conductivity and it is a low cost candidate. However Cu oxidises very fast in air which makes the bonding procedure challenging. In this...
Fan-out wafer-level-packaging (FO-WLP) technology is developed with the advantages of smaller package size, higher Input/Output (I/O) counts, lower cost, and better performance. In this study, the FO-WLP technology is applied to TSV-less inter-connection technology of 2.5D IC packaging and a novel RDL-first wafer level packaging is demonstrated. Firstly, a pre-coated laser release layer at the interface...
Traditional IC packaging requires chips to be assembled at the same level, while recently thrived 2.5D/3D IC packaging utilizes skyscraper approach to stack various types of chips with diverse functions occupying similarfootprint, and this approach not only can reduce overall package size, but also can improve electrical interconnection performance. The primary difference between 2.5D/3D IC lies in...
Microelectronic components used in automotive applications have to meet very strict reliability requirements. In addition to the mechanical or thermomechanical stresses resulting from manufacturing and application conditions, also chemical processes have to be considered if the systems are exposed to harsh environmental conditions. In these cases, mechanical stresses do not only determine the risk...
A novel HD-FO package platform was introduced with a hybrid RDL structure. An HD-FO package with hybrid RDL could enables higher routing density and multi die construction in a planner configuration. The 1-µm and submicron RDL wafers were fabricated at a foundry and then the essential parts of the inorganic RDL were integrated with Amkor's internal organic RDL process making a hybrid structure. Also,...
an innovative TSV approach that removes the historical limitations of Cu and W filled TSVs, making W TSVs once again attractive. Both films have their own advantages and disadvantages. Cu TSVs has two major advantages, one Cu electroplating has the ability to fill high aspect ratio vias enabling a wider via compared to W, and two Cu resistivity is much lower than W enabling a lower resistance via...
Significant advances have been made to lower the power consumed by active and passive components, a lot of integration still happens either on-chip or on PCB. On-chip RF integration, also known as RF system-on-chip (SoC), achieves miniaturization on silicon substrate but is expensive and results in higher loss, especially for analog RF signals. On the other hand, integration at the PCB-level sacrifices...
An inductively-coupled plasma-reactive ion etching system (ICP-RIE) for a half-inch wafer process is developed. The machine is in human-size and supporting clean-localized manufacturing system of minimal fab. A tiny chamber with a volume of 1/41 enhances performance of gas-replacement inside the etching chamber. The gas switching time between etching and polymeric passivation for a Bosch process at...
In this work we show a baseline fabrication process of interdigitated back contacted IBC c-Si(p) solar cells, which combines conventional diffusion oven stages to define base p+ and emitter n+/n++ regions at the back side, with outstanding front surface passivation using atomic layer deposited Al2O3 films over random pyramids surfaces. Cells include a selective phosphorous n++ emitter in order to...
In this work we study cost-effective cleaning solutions applied to interdigitated back-contacted solar cells (IBC), which are passivated by means of atomic layer deposited Al2O3 films. The cleaning baths must guarantee very clean surfaces as well as relatively low etching Al2O3 rates to avoid excessive undercutting at the edges of strip-like regions. We compare the standard high-cost cleaning procedure...
We report an advanced deep-reactive-ion-etching (DRIE) process developed specifically for etching ultra-deep structures in thick (>500μΉ) silicon wafers with high aspect-ratio and straight sidewalls across a wide range of feature sizes and patterns. This is achieved by ramping critical process parameters throughout the etching duration. 600–800μm deep trenches with widths as small as 20–40μm are...
A comprehensive set of density functional theory (DFT) molecular dynamics (MD) simulations is presented for interfaces between a-HfO2 high-K oxide and Si0.5Ge0.5(001) with several amorphous stoichiometric and substoichiometric SiOxNy interlayers (a-SiO0.8N0.8, a-SiO0.4N0.4, a-Si3N2, a-Si3N4 and a-SiO) to determine their electrical passivation properties. In general the sub-stoichiometric interlayers...
Rapid Alternating Process (RAP) is a series of alternating polymer deposition and Si etch cycles, each lasting only 0.2~0.9sec to suppress sidewall scallops for through silicon via (TSV) application. This paper proposes depositing the nitrided fluorocarbon (N-CxFy) polymer as sidewall passivation film to eliminate the undercut damage of silicon substrate. RIE-lag effect is observed as shrinking the...
We applied optical pump — THz probe spectroscopy to a series of polycrystalline thin film silicon solar cells treated using various technological steps. We found a clear correlation between the ultrafast carrier dynamics and the macroscopic parameters (like open-circuit voltage) characterizing the cells in a usual steady-state operation.
A mechanical study of silicon interposer bow reduction, from wafer level manufacturing to large die stacking including analytical modeling, is presented in this paper. Indeed, understanding and reducing the warpage of a dissymmetrical substrate is fundamental for assembly yield and interconnects reliability. The target here is a bow less than 50 µm for a 650 mm2 Si-interposer.
Electronic power systems follow the general trend of miniaturization and functional density. 3D technologies provide an interesting response if adapted to power specifications. In the framework of the ENIAC JU funded project Enhanced Power Pilot Line (EPPL), a new type of device has been proposed consisting of an H bridge of power transistors and a Si interposer. This paper presents an H bridge of...
This paper shows a fabrication process and device characteristics of the tunable monocrystalline silicon grating on LSI circuit. The thin monocrystalline silicon with thickness of 260 nm was transferred on the LSI circuit, by using the two-step polymer bonding process consisting of polymer patterning and bonding, and liquid-polymer filling. Furthermore, the grating was fabricated on the LSI circuit...
A high photo-induced effective minority carrier lifetime τeff of crystalline silicon was achieved by simple heat treatment in liquid water. τeff was 2.8×10−3 s for 15-Ωcm n-type crystalline silicon heat treated in liquid water at 120°C for 1.5 h. The τeff for the sample treated at 90°C increased from 1.0×10−4 s (just after the treatment) to 1.7×10−3 s by keeping the sample in the air atmosphere for...
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