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The purpose of this study was to provide a low cost manufacturing solution for Silicon Trench based Schottky rectifiers utilizing NiPt alloy composition that produces multiple barrier heights and provide designers the option to easily adjust the barrier height (BH) for rectifier designs. Higher temperatures needed to obtain larger barrier heights are generally unfavorable for trench-based Schottky...
A design methodology to optimize the drift region doping properties in trench Schottky rectifiers has been presented. Advanced lithography is being used for trench devices that are designed for smaller die sizes in wireless applications. Such devices feature narrow active trenches to maximize active area utilization in combination with a wide termination trench to support the breakdown voltage. Such...
An innovative TSV approach that removes the historical limitations of Cu and W filled TSVs, making W TSVs once again attractive. Both films have their own advantages and disadvantages. Cu TSVs has two major advantages, one Cu electroplating has the ability to fill high aspect ratio vias enabling a wider via compared to W, and two Cu resistivity is much lower than W enabling a lower resistance via...
an innovative TSV approach that removes the historical limitations of Cu and W filled TSVs, making W TSVs once again attractive. Both films have their own advantages and disadvantages. Cu TSVs has two major advantages, one Cu electroplating has the ability to fill high aspect ratio vias enabling a wider via compared to W, and two Cu resistivity is much lower than W enabling a lower resistance via...
The purpose of this study was to provide a low cost manufacturing solution for Silicon Trench based Schottky rectifiers utilizing NiPt alloy composition that produces multiple barrier heights and provide designers the option to easily adjust the barrier height (BH) for rectifier designs. Higher temperatures needed to obtain larger barrier heights are generally unfavorable for trench-based Schottky...
A critical problem of floating gate type nonvolatile memories (FG-NVMs) used in flash memories or EEPROMs is anomalous charge loss which leads to threshold voltage (V t ) shifts on a time scale of months or years at room temperature. The number of these moving bits (MB's) is greatly affected by the nature and properties of the tunnel oxide that is used in the NVM technology. In this paper...
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