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Activation and carrier generation are reported in the case of phosphorus implantation with a dose of 2.0 × 1015 cm−2 at 70 keV to crystalline silicon substrates under heating ranging from 200 to 500 °C. The analysis of the optical reflectivity spectra of implanted surfaces revealed that the effective amorphized thickness was low of 2.9 nm in the case of 200 °C-phosphorus implantation, while it was...
A high photo-induced effective minority carrier lifetime τeff of crystalline silicon was achieved by simple heat treatment in liquid water. τeff was 2.8×10−3 s for 15-Ωcm n-type crystalline silicon heat treated in liquid water at 120°C for 1.5 h. The τeff for the sample treated at 90°C increased from 1.0×10−4 s (just after the treatment) to 1.7×10−3 s by keeping the sample in the air atmosphere for...
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