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We report a newly developed sequential plasma activation bonding (SPAB) process for direct bonding between quartz glass wafers. The novel SPAB method in the present paper employed RIE N2 plasma activation followed by or instead of the O2 plasma activation before the N radical activation. Experimental results are reported and discussed with comparison with the conventional SPAB process.
Al-doped ZnO is a promising transparent conductive oxides for fabrication of opto-electronic devices. In this paper we shed lights on controlling carrier concentration and mobility of Al:ZnO by controlling deposition parameters (RF power, pressure and substrate temperature). Al:ZnO thin film with the lowest recorded resistivity of ρ=2.94E-04 Ω.cm at deposition temperature of 250°C has been achieved...
We present a pyroelectric device made from PZT screen printed on glass substrate. The pyroelectric thick film element is made of a stack of 50μm PZT between silver electrodes. The device is placed under thermal load by a stream made of a sequence of hot and cold water flowing through a PDMS microchannel aligned of top of the device. With this, it is possible to apply fast temperature changes above...
The GZO thin films of the thickness about 200∼250nm were deposited on the glass which used as a pH sensor head based on the extended-gate field-effect transistor (EGFET) by r. f. sputtering system in this study. The pH sensing characteristics of the GZO/glass EGFET sensing structure were investigated and a semiconductor parameter analyzer (Keithley 4200) was used to measure the drain-source current...
This paper describes the realization of a temperature sensor based on plasma sputtered thermocouples. The thermocouples are realized in the vacuum with quite pure materials, negligible oxydation and with low contamination thus enabling accurate measurements and are made inert by means of a thin coating of tetraethoxysilane (TEOS) that seals them. The thermocouples have an overall thickness of few...
Solar panel failure is putatively caused by electrostatic charge and discharge. An investigation of its causes and efforts to determine measures for the future require both verification under as realistic a space environment as possible and enhanced ground tests. A plasma chamber was developed at the Tsukuba Space Center to carry out charge/discharge tests to verify low-Earth-orbit satellites solar...
InN thin films were grown by reactive magnetron sputtering in a UHV system, using Ar and N2 as working gases. Electrical and optical investigations of the films were correlated with their structural and morphological characteristics in order to obtain good quality films for THz applications.
Nanostructuring is one of the effective approaches to lower the thermal conductivity of materials. Nanostructured skutterudite-related compounds CoSb3, Fe0.5Ni0.5Sb3, Fe0.25Ni0.25Co0.5Sb3 and Te-doped CoSb3 were synthesized by a solvothermal route. The bulk materials were prepared by hot pressing or spark plasma sintering from the solvothermally synthesized nanopowders. The thermal conductivity values...
The temperature dependence of PL lifetime from an Er doped SiO/sub 2/ sensor with various concentrations have been evaluated in the temperature range 0/spl deg/C to 200/spl deg/C. An Er doped SiO/sub 2/ sensor with Er concentration above 5000 ppm and Al/Er=15 is considered to be suitable for the fiber-optic thermometer. The PL lifetimes of the Er doped SiO/sub 2/ sensor decrease from 10 ms to 8.6...
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