The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The semiconductor packaging technology trend for electronic products continues to achieve greater miniaturization and higher functionality. Thinner profile chip scale packaging (CSP), such as flip chip CSP (fcCSP), with increasing die complexities is a very important technology for next generation communication devices and internet of things (IoT) applications. Recently, integrated fan out wafer-level...
Bonding dynamics during ultrasonic bonding of Cu free air ball (FAB) is investigated by measuring dynamic strain with piezoresistive strain sensor. Change in dynamic strain with elevating substrate temperature up to 200°C was investigated. It was clearly observed that elevating substrate temperature significantly enhanced deformation of the Cu FAB while the application of pressing load and ultrasonic...
Herein we present a flexible temperature sensor and a flow speed sensor based on laser-induced graphene. The main benefits arise from peculiar electrical, thermal and mechanical performances of the material thus obtained, along with a cheap and simple fabrication process. The temperature sensor is a negative temperature coefficient thermistor with non-linear response typical of semi-metals. The thermistor...
Low-temperature silver sintering technology, which has been proven to be a promising die-attach solution, was extended to bonding large substrates. Strong bonding strengths for substrates greater than 25 mm × 50 mm were achieved by sintering a nanosilver paste at temperatures below 270°C with less than 5 MPa pressure. To characterize thermal performance of the substrate-attach interface, we applied...
The root mean square (rms) measurement of alternating voltage of any waveform is frequently done by means of thermal transfer instruments. The principle of these thermal rms converters is to transfer the heating energy of resistive load to a temperature-sensing element. The dc voltage output of the sensor reflects the amount of electrical power (ac or dc) applied to the input. This paper is addressing...
Tungsten oxide and silver-decorated tungsten oxide were investigated for the detection of oxygen in a humid environment. The sensor materials were deposited onto alumina sensor substrates via aerosol-assisted chemical vapour deposition. Results indicated that our sensors showed good sensitivity to oxygen, following an almost a linear relationship over a 0 to 20% concentration range. In comparison...
As wearable biosensor systems are integrating multiplexing capabilities, the size of control electronics is increasing. A modular design approach separating the control electronics from the sensing components is advantageous to produce low cost and wearable solutions. By making the sensing components on disposable low-cost patches, the control electronics can be made with custom signal processing...
This paper investigates substrate biasing effects in a monolithically-integrated half-bridge stage rated for 600 V/20 A and fabricated in a lateral AlGaN/GaN-on-Si technology. On-resistance degradation effects caused by the common substrate potential are analyzed and explained for the monolithic half-bridge stage operating in a 400 V-synchronous buck converter. The detailed analysis of an ungated...
III-V semiconductor heterostructures grown on GaSb and InAs substrates are widely used to produce high performance optoelectronic devices operating in the technologically important mid-infrared spectral range. However, these substrates are expensive, only available in small sizes and have low thermal conductivity. Integration of III-Vs onto silicon substrates offers the opportunity to overcome these...
The formation of a high temperature die attach based on transient liquid phase (TLP) bonding is demonstrated using the binary system Ag-Sn in a sputtered thin layer approach. The microstructure and shear strength are compared to a foil based approach and show the successful replacement of the Sn foil and thus a simplification of the stack assembly. The diffusion of the Ag-Sn system is investigated...
In this study, a high-efficiency and low dark current thin-film crystalline selenium (c-Se)/gallium oxide (Ga2O3) heterojunction photodiode is demonstrated via improving the deposition conditions for the tellurium nucleation layer that prevents the peeling of the selenium film during annealing. The highly (100)-oriented polycrystalline selenium film is grown by employing a thin tellurium (Te) nucleation...
Spurious oscillations in the low frequency region (below 100kHz) were investigated in InGaP/GaAs HBT devices and circuits. These low frequency oscillations (LFOs) are predominantly activated by the field across the semi-insulating GaAs substrate located between the subcollector and backside metal (of an emitter-up device). Several experiments were conducted to control and eliminate LFOs by floating...
Thermal dissipation is a major concern in microelectronics, especially for compact packages and 3D circuits where the dense stacking of thin silicon layers leads to a significant increase of heat densities. Direct hybrid bonding is considered as one of the most promising technologies for future 3D-ICs. Its face-to-face structure allows significant inter-connexion capabilities but it also implies increased...
Failures may often occur in the packaged power terminals (PPTs) of the heater modules during harsh wafer baking process. The dominant failure factor is a high temperature. Hence, the performances of the PPTs should be explored under multiphysics environment to develop robust heater modules. In this study, FEA electrical-thermal-structural models of the PPTs are developed and experimentally validated...
In this paper we present CFD simulations to model enzymatic reactions in microfluidic flow-through chambers. The chambers are filled with magnetic nanoparticles (MNPs). For the modeling we used the open source software OpenFOAM. The simulation settings are based on previous measurement results. The fluid flow, the effects of the magnetic nanoparticles and the enzymesubstrate reaction are being examined...
Cathode related current collapse effect in GaN on Si SBDs (Schottky Barrier Diode) is investigated in this paper. Capacitance and current relaxation measurements on diodes and gated-VDP (Van Der Pauw) are associated with temperature dependent dynamic Ron transients analysis showing that the main part of the current collapse at the cathode comes from a combination of electron trapping in the passivation...
Temperature dependent substrate ramp measurements on AlGaN/GaN power high-electron-mobility transistors (HEMTs) are used to extract information on charge redistribution in the buffer structure as a function of substrate bias. The measurements are compared to a theoretical model, representing the ideal capacitive buffer stack. It is found that at room temperature some negative charge is stored in the...
Amorphous thin films are used as components of acoustic resonators because they could control temperature coefficient of resonator. Because elastic constants of thin films are often different from those of bulk materials, the direct measurement of sound velocity and temperature coefficient of velocity (TCV) for individual thin films becomes important in designing resonators. Because The TCV of amorphous...
For new-generation thermal power plants, off-line non-destructive testing is not sufficient and long-term monitoring at high temperature is desired. In the previous study, ultrasonic transducers made by CaBi4Ti4O15 (CBT)/Pb(Zr, Ti)O3 (PZT) were investigated and maximum operation temperature was estimated as ∼600°C. Since operation temperature of new-generation thermal power plant will be ∼700°C, it...
In order to study relaxation characteristics of viscoelasticity of the liquid, a wide frequency sweep in the range of MHz to GHz is desired. We, therefore, report a new type HBAR (High-overtone Bulk Acoustic Resonator: shear mode ScAlN film on AT-cut quartz plate) sensor which makes it possible to operate in a wide frequency range as shown in Fig. 1. When a thickness shear acoustic mode (TSM) resonator...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.