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Cathode related current collapse effect in GaN on Si SBDs (Schottky Barrier Diode) is investigated in this paper. Capacitance and current relaxation measurements on diodes and gated-VDP (Van Der Pauw) are associated with temperature dependent dynamic Ron transients analysis showing that the main part of the current collapse at the cathode comes from a combination of electron trapping in the passivation...
Energy is one of the main societal challenges of the 21th century. With the growth of population and cities, CO2 emission reduction, efficiency improvements especially in transportation modes will have to be enhanced. Cost will the main driver of power devices. This paper reviews the developments at CEA-Leti in power electronics. A complete GaN on 200 mm line has been implemented. For each stage of...
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