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This demonstration presents a practical real-time full-duplex wireless link consisting of two full-duplex transceivers. Our prototyped full-duplex transceiver contains a custom-designed RF self-interference canceller and a National Instruments (NI) Universal Software Radio Peripheral (USRP). The discrete-component-based RF self-interference canceller emulates a compact RFIC implementation, which uses...
Ohmic and low-resistance electrical contacts on silicon carbide have been demonstrated for the first time up to very high temperature (800°C) in an oxidizing environment. A specific contact resistance of about 2 × 10−4 Ω.cm2 was achieved after silicidation at 900°C. Long term aging tests in an oxygen atmosphere were performed, demonstrating ohmic behavior up to 1000 h at 550°C and over 4 h at 800...
More than 90% of commercial solar cells are produced using mono- and poly-crystalline silicon, with estimated about 15,000 MT of silicon feedstock used in 2008. Future silicon use is estimated to grow proportionally with the solar industry (30%/y). Substantial amounts of highly refined polycrystalline silicon material are wasted in the final stages of producing ingots and in wafer slicing. Recycling...
Silicon carbide (SiC) is a IV-IV compound semiconductor material with a wide band gap. Semiconductor electronic devices and circuits made from SiC are presently being developed for high-temperature, high-power, and high-radiation conditions in which conventional semiconductors can not adequately perform. In this study, 3C-SiC micro-pillar arrays were fabricated on Si substrate by chemical vapor deposition...
Silicon MEMS as electrostatically levitated rotational gyroscope and 2D optical scanner, and wafer level packaged devices as integrated capacitive pressure sensor and MEMS swatch are described. MEMS which use non-silicon materials as diamond, CNT (carbon nano tube), LTCC with electrical feedthrough, SiC (silicon carbide) and LiNbO3 for multi-probe data storage, multi-column electron beam lithography...
Polish Government Program ldquoNew technologies based on silicon carbide and their applications in high frequency, high power and high temperature electronics rdquo covers an project package that consists of three general tasks. The contribution presents the overview of projects in the field dealing with the design and manufacturing of power SiC semiconductor devices.
Graphene is a possible candidate for advanced channel materials in future field effect transistors. This presentation gives a brief overview about recent experimental results in the field of graphene transistors for future electronic applications.
Cooling is important to keep the temperatures of the highly integrated silicon electronic devices and power devices e.g. power MOSFET, IGBT. Yamaguchi et al. have proposed a new scheme to cool down the devices by its own current named ldquoself-cooling devicerdquo, in which the cooling process uses Peltier effect. In the proposed scheme, we should use the materials that have high thermal conductivity,...
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