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Based on the dynamic behavior of IGBT and diode, this paper proposed an experimental method for extracting stray inductance of bus bars without high bandwidth current measurement. The experiment is implemented by a double pulse test of the 4.5kV/3000A HVIGBTs. The stray inductance extraction results of several methods were analyzed and compared, verifying the accuracy of the proposed method.
Silicon carbide (SiC) MOSFETs benefiting from the wide bandgap materials offer a significant performance improvement compared with Silicon devices. However, the high switching speed makes the power switching to be a source of EMI. The suppression of the EMI generation can be achieved by shaping the switching transient to an “S-shape”. The active voltage control (AVC) strategy is a feasible method...
This paper discusses the challenges of paralleling dual modules with special focus on the currently introduced dual modules like LinPak, nHPD2, XHP, LV/HV100, etc. Compared with IHM/IHV Modules 3 to 4 times as many modules have to be paralleled to achieve the same output power. Therefore the parallel connection will play a major role in designing high power converters, used e.g. in traction applications...
This paper presents an electro-thermal based junction temperature (Tj) estimation method of insulated gate bipolar transistor (IGBT) power module. Firstly, the internal structure of IGBT and its transient characteristics are researched, through which the factors affecting the power loss as well as its basic influence rule are analyze and the multivariable loss calculation model is obtained. And then...
Rapid sintering of nanosilver paste had been proposed to bond power chips in our previous work. It seems a potential good way to improve the efficiency of power module manufacturing because of the much shorter sintering time, i.e., 15 seconds. In this study, we tried the way of rapid sintering of nanosilver paste for bonding power chips in order to verify the feasibility of the rapid sintering method...
This paper introduces a simplified method for estimating switching energy losses in an IGBT device of a Voltage Source Converter (VSC) using Electro-Magnetic Transient (EMT) simulations. By considering the switching process as characterized by an equivalent circuit model of a unit cell that represents one leg of a VSC, equations are derived to evaluate the switching losses at different load currents...
In this work, we concentrate on extending our optimization method for IGBTs [1] in drives applications by incorporating diode parameters in addition to IGBT parameters. For this purpose, the fabrication process of the diode, including a platinum diffusion and it's parameters for lifetime adjustment [2], was added to the optimization loop. Consequently, the simulation of an IGBT turn-on event in the...
Parallel-connected IGBTs are prone to large-current destruction in high-power applications due to current unbalance between each IGBT branches. This paper proposes a novel control method to improve the current balance in order to protect the device against over current destruction. The method uses two control loops to confine the current rising speed as well as to reconcile the current change start...
An advanced gate drive unit for 1.2 kV IGBT modules has been developed. It includes two main features: limitation of the collector-emitter voltage slope and of the collector-emitter peak voltage. This is achieved through a feedback loop with a capacitive/resistive voltage divider coupled to the gate-emitter voltage of the IGBT. For the studied case a reduction of the switching losses of around 25%...
This paper investigates the switching performance of six-pack SiC MOSFET and Si IGBT modules for motor drive applications. Both the modules have same packaging and voltage rating (1.2 kV). The three bridge legs of the modules are paralleled forming a single half-bridge configuration for achieving higher output power. Turn-on and turn-off switching energy losses are measured using a standard double...
The superconducting magnets, intended for use in the LHC High Luminosity (HL-LHC) project at CERN are based on Nb3Sn technology. Powering of prototypes of such magnets with up to tens of kilo-Amperes is required for detailed studies of the quench behavior as well as an evaluation of the associated magnet protection equipment. For this purpose an ultra-fast energy extraction system is needed in order...
Traditional IGBT turn-on loss evaluation methods are curve fitting of double pulse test data without insight of IGBT turn-on process. This paper proposed an analytical evaluation method of IGBT turn-on loss. In the proposed method, a qualitative IGBT switching waveform and an IGBT switching trajectory in output characteristics are used to analyze IGBT turn-on process. The detailed expressions for...
Hydrogen-related donors can be formed by using only a moderate thermal budget, so that this process can be used to create field-stop layers in thin power devices. The electrical characteristics of 1200 V IGBTs and diodes provided with such field-stop layers are presented and compared with the characteristics of conventionally processed devices. Moreover, tailoring the field-stop distribution by multi-energy...
This paper introduces a detailed study of minority carrier lifetime profile into transient anode voltage and current modeling of Non-Punch Through (NPT) Insulated Gate Bipolar Transistor (IGBT). The minority carrier concentration has been modeled through parabolic approximation. With the new approach, an analytical model has been developed for turn-off voltage and current of IGBT in all minority carrier...
Insulated gate bipolar transistors (IGBTs) are usually connected in series to satisfy the requirements of high-power and high-voltage in power electronics applications. However, due to the parameter deviations of the series-connected IGBTs, it is difficult to ensure an equal voltage sharing between them during both transient and steady-state operations. This paper proposed a novel active gate drive...
Gate drives of today's high-voltage insulated gate bipolar transistors (HV-IGBTs) are in most cases voltage source based and with fixed gate resistors. Consequently, the contradiction between high-speed switching for minimized power loss and low-speed switching for low noise and low switching stress cannot be resolved simultaneously. This paper proposes a novel active gate drive (AGD) which operates...
In this paper the switching speed limits of high power IGBT modules are investigated. The limitation of turn-on and turn-off switching speeds of the IGBTs are experimentally detected in a pulse tester. Different dc-bus stray inductances are considered, as well as the worst case scenario for the blocking dc-link voltage. Switching losses are analyzed upon a considerable variation of resistor value...
This paper deals with an open-circuit IGBTs faults diagnostic method that is dedicated for three-phase two-level voltage inverter fed vector controlled induction motor drive systems. The presented technique is based on a transient analysis of a reference voltage space vector in a stationary reference frame and it does not require an extra sensors application. The diagnostic algorithm ensures to detect...
Many important performance parameters in an IGBT power semiconductor are heavily affected by its field-stop profile, its device thickness and its collector-side p-doping concentration. To find the optimum combination of these design parameters is of high importance for an optimal IGBT design. The optimization criteria include low switching and on-state losses as well as limited maximum overshoot voltage...
Since the voltage blocking capability of a single insulated gate bipolar transistor (IGBT) is limited, series-connected IGBTs are used in power electronic converters to satisfy the requirements of high-power and high-voltage applications. However, due to the parameter differences of the series-connected IGBTs, it is difficult to ensure an equal voltage sharing between the devices during both transient...
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