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Silicon carbide (SiC) MOSFETs benefiting from the wide bandgap materials offer a significant performance improvement compared with Silicon devices. However, the high switching speed makes the power switching to be a source of EMI. The suppression of the EMI generation can be achieved by shaping the switching transient to an “S-shape”. The active voltage control (AVC) strategy is a feasible method...
In this paper, a novel method for EMI (electromagnetic interference) level prediction is proposed. The method is based on the hierarchical structure of the generation of EMI. That is, the determination of EMI level can be divided into three levels, namely the functional level, the transient level and propagation level. The lower level provides parameter values for the higher level. That makes the...
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