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Electrical characterization results (e.g. softness, cosmic ray hardness, surge current) of a novel freewheeling diode with reduced thickness and copper metallization are shown.
Hydrogen-related donors can be advantageously used in IGBTs and power diodes with a view to creating field-stop layers and to optimising the electrical performance. In this work, the influence of hydrogen-related donors on the on-state plasma profile in field-stop IGBTs is analysed by means of free-carrier absorption measurements. For these investigations, dedicated IGBT test structures were used,...
Hydrogen-related donors can be formed by using only a moderate thermal budget, so that this process can be used to create field-stop layers in thin power devices. The electrical characteristics of 1200 V IGBTs and diodes provided with such field-stop layers are presented and compared with the characteristics of conventionally processed devices. Moreover, tailoring the field-stop distribution by multi-energy...
A novel power Cu front side chip metallization for insulated-gate bipolar transistors (IGBTs) and freewheeling diodes (FWDs) enabling thick Cu wire wedge bonding on active area is reported. In the continuing race to higher power density, main limitations of IGBT power modules are given by short circuit robustness requirements of the IGBT and power cycling capability of the front side Al wedge bond...
In the last ten years, the hardening of silicon high power devices against cosmic-radiation-induced failure gained decisive importance. A systematic improvement of the robustness against cosmic radiation requires a fundamental physical understanding of the microscopic mechanisms which lead to the failure or even destruction of power devices. We performed detailed 3D thermo-electrical device simulations...
In this work we will focus on the short circuit destruction of IGBTs after turn-off. Electro-thermal device simulations and experimental verifications have been carried out to study the failure mechanism and identify the improvement potential. Heat diffusion to the front and back side chip surfaces after the short circuit pulse causes temperature rises at the pn-junctions which in turn inject thermally...
A 6.5 kV controllable freewheeling diode (CFD) has been realized for the first time. A forward voltage VF up to 2.5 V (66 A/cm2) and a VF rising over 1.8 V between gate off state and gate on state at 125degC temperature was realized. A reduction of the recovery charge Qrr and consequently reverse recovery energy Erec of more than 35% have been achieved in comparison with a state of the art 6.5 kV...
Freewheeling diodes are one of the major components for modern IGBT modules and have to satisfy a number of demands. Especially in hard switching applications, such as inverters for industrial drives or UPS, a soft switching behavior of the diode is - besides low losses and high ruggedness - of major interest. A high softness reduces EMI problems and enables a faster turn-on of the IGBT. In this work,...
Reverse conducting IGBTs are fabricated in a large productive volume for soft switching applications, such as inductive heaters, microwave ovens or lamp ballast, since several years. To satisfy the requirements of hard switching applications, such as inverters in refrigerators, air conditioners or general purpose drives, the reverse recovery behavior of the integrated diode has to be optimized. Two...
The long term stability and special drift phenomena of different trench IGBT structures under multiple switching tests are experimentally evaluated. It can be confirmed that a state of the art trench IGBT structure shows a very stable dynamic performance, but another device structure with so called "unprotected" trenches undergoes a significant change in the switching behaviour within millions...
This paper presents Infineonpsilas latest 1200 V power semiconductor generation: IGBT4 and EmCon4 diode. The new technology comes as a family optimized for applications in three different power levels: low, medium, and high power. Each part is balanced accordingly in its dynamic and static losses, switching frequency, and softness. In this paper the new technology is introduced, the electrical and...
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