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The main theme of this paper is to propose a novel switching control method for bridgeless PFC converter to improve the efficiency by reducing both switching and conduction losses. Comparing to the conventional method, the power device is always on (no switching loss) to provide a current path via the turn-on resistor of MOSFET to reduce conduction losses under light load condition. As the load increases,...
Gallium Nitride has shown its potential over traditional Silicon devices with low switching and conduction losses. However, fast switching transition poses great challenges in dynamic device characterization due to sensitivity to parasitics and high requirement in testing equipment. An accurate switching behavior characterization method is proposed in this paper with loop inductance minimization and...
In this work, a gate driver with multiple stages based on switched resistors is presented. The influence of the different stages on the turn-on and on the turn-off behaviour is investigated using experimental measurements conducted on a double pulse test bench. It is shown that, compared to a single-stage reference driver, switching loss improvements are possible while maintaining the same voltage...
In this paper, a comprehensive evaluation work on 1.7 kV SiC Super Junction Transistor (SJT) power module and 1.7 kV SiC MOSFET power modules is presented. Both device static and dynamic performance is extracted and compared at wide device current range and temperature range. The data presented in this paper can be used as input for medium voltage power conversion system power transistor selection,...
In this paper, an FPGA-based on-line switching loss measurement system for an advanced condition monitoring system is presented. For this purpose, an on-line measurement system for the semiconductor voltage and current transients integrated at the gate-driver voltage level is proposed. This system and the switching loss calculations are verified by experimental results.
Due to the limitation in circuit measurements using current and voltage probes, the conventional ways of measuring switching losses lack the physical insight of the complicated witching process in power devices such as the SiC power MOSFET. This paper seeks to have a better understanding of the dynamic turn-on and turn-off processes of the SiC power MOSFET. Using a detailed finite element simulation...
In this paper, we present a comprehensive evaluation of the latest 600 V class Gallium Nitride based Gate Injection Transistor (GaN-GIT) for high temperature and high efficiency applications. In this study, the Panasonic GITs are used as the reference for latest GaN-GIT technology. Static and dynamic testing was performed on the two GaN-GIT versions to extract critical static parameters and switching...
There is a growing need for motor drives with improved EMC in various automotive and industrial applications. An often referenced approach to reduce EME is to change the shape of the switching signal to reduce the EMI caused by the voltage and current transitions. This requires very precise gate control of the power MOSFET to achieve better switching behaviour and lower EME without a major increase...
In this paper the switching behaviour of SiC MOSFETs is regarded with respect to the influence of the free-wheeling diode. A double pulse test was performed using two silicon carbide Schottky barrier diodes (SBD) of different rated currents and the intrinsic body diode of a silicon carbide MOSFET. The switching losses of these three combinations are analysed to find the best combination of MOSFET...
Double pulse tester (DPT) is a widely accepted method to evaluate the switching behavior of power devices. Considering the high switching-speed capability of wide band-gap (WBG) devices, the test results become significantly sensitive to the alignment of voltage and current (V-I) measurement. Also, because of the shoot-through current induced by Cdv/dt, during the switching transient of one device,...
Soft-switching techniques are very attractive and often mandatory requirements in medium-voltage and medium-frequency applications such as solid-state transformers. The effectiveness of these soft-switching techniques is tightly related to the dynamic behavior of the internal stored charge in the utilized semiconductor devices. For this reason, this paper analyzes the behavior of the internal charge...
Device switching times and switching energy losses are required over a wide range of practical working conditions for successful design of insulated gate bipolar transistor (IGBT) based power converters. This paper presents a cost-effective experimental setup using a co-axial current transformer for measurement of IGBT switching characteristics and switching energy loss. Measurements are carried out...
This paper investigates the effect of the conducted EMI (Electromagnetic Interference) and the switching loss which occurs from the switching devices in the switching period of the unipolar and limited unipolar switching circuits. The three main sources of conducted EMI and switching loss in the unipolar and limited unipolar switching circuit come from the switching devices, the number of switching...
This paper presents simulation and measurement loss determination results for different switching schemes in a frequency converter using CoolMOS transistors. Different Space Vector Modulation (SVM) schemes has been investigated. The simulation and measurement results show a close correlation. The losses in the MOSFETs have been determined with temperature measurement resulting in high accuracy. It...
The power transistor (IGBT) is one of the most important components of the inverter of domestic induction cookers. For this application the maximum junction temperature (Tjmax) of the IGBT is one of the most critical design parameters because the cooker has to decrease the output power when the junction temperature is near to Tjmax of the device. The junction temperature (Tj) of the IGBT principally...
This paper presents a novel high performance generalized discontinuous pulse width modulation (GDPWM) algorithm for reduced current ripple without angle and sector estimation. The conventional space vector modulator with equal division of zero state vectors time is modified to generate different discontinuous modulating waves. A constant-variable mu ranging from 0 to 1 is used to generate infinite...
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