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In this paper, a comprehensive evaluation work on 1.7 kV SiC Super Junction Transistor (SJT) power module and 1.7 kV SiC MOSFET power modules is presented. Both device static and dynamic performance is extracted and compared at wide device current range and temperature range. The data presented in this paper can be used as input for medium voltage power conversion system power transistor selection,...
In this paper, we present a comprehensive evaluation of the latest 600 V class Gallium Nitride based Gate Injection Transistor (GaN-GIT) for high temperature and high efficiency applications. In this study, the Panasonic GITs are used as the reference for latest GaN-GIT technology. Static and dynamic testing was performed on the two GaN-GIT versions to extract critical static parameters and switching...
Soft-switching techniques are very attractive and often mandatory requirements in medium-voltage and medium-frequency applications such as solid-state transformers. The effectiveness of these soft-switching techniques is tightly related to the dynamic behavior of the internal stored charge in the utilized semiconductor devices. For this reason, this paper analyzes the behavior of the internal charge...
This paper presents simulation and measurement loss determination results for different switching schemes in a frequency converter using CoolMOS transistors. Different Space Vector Modulation (SVM) schemes has been investigated. The simulation and measurement results show a close correlation. The losses in the MOSFETs have been determined with temperature measurement resulting in high accuracy. It...
The power transistor (IGBT) is one of the most important components of the inverter of domestic induction cookers. For this application the maximum junction temperature (Tjmax) of the IGBT is one of the most critical design parameters because the cooker has to decrease the output power when the junction temperature is near to Tjmax of the device. The junction temperature (Tj) of the IGBT principally...
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