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High brightness light emitting diodes, LEDs are the latest generation of solid-state lighting devices. These LEDs portray good luminous efficiency and energy saving properties when compared with the conventional lights. Despite the advantages of the LEDs, it is important to dissipate the heat generated by the PN junction of the LED to enviroment as trapped heat in the LED package will degrade the...
In this paper the bond wire lift-off failure mechanism experienced in insulated gate bipolar transistor modules, under realistic operation conditions, is investigated theoretically. This failure type is generally believed to be due to thermally induced stress arising from a mismatch in the coefficients of thermal expansion of the materials constituting the module. The theoretical evaluation is based...
We present filament behavior of STI type DeNMOS devices using detailed Transient Interferometric Mapping experiments and 3D TCAD simulations. Device behavior at different TLP currents is discussed. The impact of localized base-push-out, power dissipation because of space charge build-up, regenerative NPN action and various events during the current filamentation are explored. By uniform turn-on of...
Hot carrier (HC) reliability of SOI LDMOS suppressing self-heating effect was investigated. We evaluated an appropriate HC degradation by controlling junction temperature (Tj) within the temperature range the circuit is actually operated of. A gate pulse HC evaluation system was used to suppress the self-heating effect during HC stress. Pulse HC stress shows that the drain current shift is three times...
Transconductance (gm) enhancement in n-type and p-type nanowire field-effect-transistors (nwFETs) is demonstrated by introducing controlled tensile strain into channel regions by pattern dependant oxidation (PADOX). Values of gm are enhanced relative to control devices by a factor of 1.5 in p-nwFETs and 3.0 in n-nwFETs. Strain distributions calculated by a three-dimensional molecular dynamics simulation...
Bipolar ESD protection devices subjected to low current long pulse stress can sustain a relatively long time during thermal second breakdown without any damage. The effect is related to a particular current filamentary behavior, which is observed optically by TIM and explained by device simulation. It is also shown that the second breakdown is initiated at the edges of the device when a moving current-tube...
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