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Abstract- There is a need to improve the performance of Si+ implant dopant source for several emerging high dose low energy precision material modification implant applications. Beam current and source life obtained from SiF4, the currently available dopant source is not able to meet either the beam current or the ion source life desired to enable the adoption of such applications. This paper presents...
In this paper the linear temperature coefficient of frequency in bulk-extensional MEMS resonators is reduced utilizing a relatively thin layer of sputtered Fluorine-doped silicon dioxide (SIOF). The Fluorine doping is achieved through addition of a Fluorine-containing gas in the Ar/O2 gas mixture of a typical SiO2 RF magnetron sputtering process. Our preliminary results indicate that the temperature...
The effect of a passivating buffer layer is studied in single-junction microcrystalline silicon (μc-Si:H:F) solar cells grown by PECVD from a SiF4/H2/Ar precursor mixture. We employ a variation of buffer layer thickness and absorber layer thickness in order to distinguish recombination processes occurring at the interfaces or within the bulk material. By introducing a thin amorphous i-n-layer stack...
Negative Bias Temperature Instability (NBTI) is one of the major issues related to p-channel metal-oxide-semiconductor (PMOS) reliability that has been discussed for more than 40 years. In this paper, we discussed the effect of fluorine (F) co-implant to the NBTI improvement, capacitance and silicon oxide (SiO2) thickness in term of F concentration, implant energy and also implant sequence at p+-region...
For each device sk Hynix produces, an eco-efficiency indicator is calculated which takes into account both the product value (performance, power consumption etc) and its environmental influence (material consumption, global warming emissions and regulation compliance). To reduce the environmental influence, a detailed analysis of the contribution of each gas used during manufacturing was carried out...
A new topography simulation method has been developed for SF6/O2/Si plasma etching of trench gates in IGBTs. This method calculates the ion and fluorine radical flux parameters required for the topography simulation from the etching rate and selectivity obtained from simple basic experiments. The O radical flux was assumed as a function of the operating conditions and the function form was determined...
Carbon, Fluorine, and Nitrogen are the co-implant species known for performing PMOS ultra-shallow junction. For the first time, it is demonstrated that the combination of the above three co-implant species could be most effective in suppressing boron diffusion for the continuous device performance improvement of sub-32 nm technology. Vth roll-off characteristics were dramatically improved and a DIBL...
Improvement of Fermi-level pinning (FLP) and relaxation of negative-bias-temperature-instability (NBTI) for CMOS without interfacial layers was achieved by fluorine incorporation into HfO2. The driving current capability was increased up to 48% and 45% for n-MOSFET and p-MOSFET, respectively. It's caused by the oxygen vacancy was blocked by the fluorine incorporated interface and resulted in the suppression...
The size of IC device has been reduced resulting from the advancement of silicon fabrication technology in reducing the transistor gate length. For wire bonded devices with high IO count, the final die size is principally determined by the size and layout configuration of the IO cells and wire bond pads. Traditional design of wire bond pads would consist of a top metal layer with no active circuitry...
Wafer direct bonding is a generic tool enabling realization of innovative structures. To expand the applications, an ideal bonding method is expect to achieve sufficient bonding strength at room temperature without requiring annealing, low-cost without high-vacuum system and facile treatment process. In this paper, a novel and simple wafer direct bonding process using fluorine containing plasma activation...
Owing to superior physical properties such as high electron saturation velocity and high electric breakdown field, GaN-based high electron mobility transistors (HEMTs) are capable of delivering superior performance in microwave amplifiers, high power switches, and high temperature integrated circuits (ICs). Compared to the conventional D-mode HEMTs with negative threshold voltages, enhancement-mode...
In this work, without employing any IPL, excellent electrical performances for the Ge MOS devices, i.e. MOSCAPs and MOSFETs, have been demonstrated using ultra high vacuum (UHV) deposited Ga2O3(Gd2O3) [GGO] directly on Ge (100) with the incorporation of fluorine. The GGO/Ge interface is atomically abrupt with negligible Ge inter-diffusion and highly thermodynamically stable withstanding high temperature...
In this paper, the reliability of the fluorinated hafnium oxide (HfO2) gate dielectric using novel and CMOS compatible fluorinated silicate glass (FSG) process has been studied comprehensively for the first time. Due to dangling bonds and oxygen vacancies recovery by the fluorine atoms, higher transconductance, smaller stress-induced threshold voltage and interface state degradation are therefore...
There is wide acceptance of the hypothesis that links health effects with the presence of atmospheric suspended particles. The goal of this paper was to study the elemental analysis of atmospheric particles in the Universiti Kebangsaan Malaysia (UKM) campus. Sampling was performed in one of UKM's students resident areas called college Zaa'ba. Samples were collected as PM10 for 24 h using high-volume...
In common agreement with Negative Bias Temperature instability (NBTI) as a serious Front-end reliability issue, great efforts were made in recent years to investigate NBTI mechanism, characterization techniques and performance improvement. In this work authors focused on device NBTI performance improvement from combined impact of multiple process steps integration relating to SiON/Si interface quality...
Nanoimprint lithography (NIL) has proven to be an exceptional lithographic technique for nanoscale features. The elimination of the adhesion of the imprinted polymer to the imprinter upon withdrawal of the imprinter is crucial for a reliable transfer of the nanoscale pattern. Previous work on thick (>100 nm) diamond-like carbon (DLC) layers indicates fluorinated diamond-like carbon (F-DLC) provides...
The cost of photovoltaic (PV) energy generation has been steadily reduced with the increase of solar cell power conversion efficiency and the drop of manufacturing cost. An effective way of lowering the cost of Si thin film solar cells is to increase the solar panel size by growing thin films on large area substrates, where it is important to maintain uniform film properties to ensure efficient and...
In this paper we report on the fabrication of amorphous silicon (a-Si:H)/microcrystalline silicon (μc-Si:H) p-i-n tandem solar cells on high haze fluorine-doped tin oxide (SnO2:F) transparent conductive oxide (TCO) thin films, type-HU. The HU-TCO has double texture morphology on its surface and shows high haze value through the whole optical region where the tandem solar cells are sensitive. We demonstrate...
We demonstrate for the first time a fluorine incorporated band- engineered (BE) tunnel oxide (SiO2/HfSiO/SiO2) TANOS with excellent program / erase (P/E) characteristics and endurance to 105 cycles. Incorporating fluorine in the tunnel dielectric improves Si/SiO2 interface resulting in excellent endurance of nearly constant over 3 V P/E window for at least 105 cycles. Fluorine also reduces interface...
F2 gas mixtures offer ideal properties to be employed as chamber cleaning gas: low dissociation energy and high reactivity, which leads to superior efficiency and ease of abatement. In this work, a new F2 gas mixture was used with a combination ratio of 10% Ar, 20% F2 and 70% N2 in order to obtain a maximum of 20% fluorine in inert gases. This novel Ar/N2/F2 gas mixture has been evaluated as a candidate...
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