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This study reports on a reliability investigation of AlGaN/GaN HEMTs submitted to life tests in High Temperature Operating (HTO) conditions at 150°C, 175°C, 275°C and 320°C. These life tests showed two different degradation steps of the drain current. One is occurring in the first tens of hour of the life test and characterized by a decrease of the drain current. The evolution of the electrical characteristics...
In this paper we compare methods to determine the life-time of AlGaN/GaN HEMTs by accelerated DC life-tests. They all base on monitoring of both, IDSS and IDQ during the life-test, either at room temperature of at the elevated ambient temperature. The goal is to investigate whether interruptions of the life test to measure IDSS at room temperature can be prevented and replaced by screening this parameter...
This paper reviews the main problems characterizing the past and present of GaN-based HEMT reliability. Some general considerations on the maturity of this technology and published lifetesting extrapolations are followed by a review of physical degradation mechanisms, subdivided between temperature-activated and electrical ones, the latter generally linked with the much-debated ldquocurrent collapserdquo...
The degradation mechanisms of 0.1 mum AlSb/InAs HEMTs subjected to elevated-temperature lifetesting at three temperatures in N2 atmosphere were investigated. Device degradation exhibits the increase of non-pinch-off drain current (IDS), the decrease of transconductance (gm) and the gate current (IG) increase. The IG increase was found to correlate with material degradation on the gate-recess and Al...
GaN-on-Si transistors are put through an extensive suite of reliability tests in order to accurately assess the drift characteristics of the technology. Data is presented on DC-HTOL, RF-HTOL, and 3-temperature DC tests. In all cases results are compared with the previous generation of technology and reveal improved results. Highlights include an increase in the activation energy from 1.7eV to 2.0eV...
Lasing operation up to 125 /spl deg/C of 1.3 /spl mu/m InP-based VCSELs with AlGaInAs/InP DBR has been demonstrated. A single mode power of 0.6 mW at 85 /spl deg/C, 10 Gbit/s transmission through 10 km and >2500 hours lifetime have been achieved.
A 200 h life test of nitride passivated AlInGaAs multimode lasers, with more than 20% aluminum, operating at 16 mW//spl mu/m, demonstrated a linear degradation rate of less than 0.1%/1000 h under stress conditions of 90 /spl deg/C QW temperature and 2500 A/cm/sup 2/ current density. No devices failed.
Recombination-enhanced-defect-reaction (REDR) (Kymerling, Solid State Electron. vol 21, pp. 1391-1401, 1978) has been recently proposed (Magistrali et al. 1997) as the driving mechanism for sudden failures in 980 nm SL SQW InGaAs pump laser diodes for active fiber optics. The proposal follows a set of observations on life-tested devices that coherently lead to link the ultimate catastrophic failure...
We report the degradation mode of a InP strained QW spot-size converted (SSC) laser. We succeed in suppressing a buried heterointerface degradation with a combination of MOVPE growth and dry etching techniques (2-inch wafer process). The far-field patterns and wide-temperature operation required for low-cost system application scarcely changed during degradation, and the device life is at least 10/sup...
The base current of AlGaAs/GaAs heterojunction bipolar transistor subjected to a long burn-in test often exhibits an abnormal characteristic with an ideality factor of about 3, rather than a normal ideality factor between 1 to 2, in the mid-voltage range. This paper develops an analytical model to investigate the physical mechanisms underlying such a characteristic. Our model calculations show that...
The reliability of doped-barrier AlGaAs/GaAs multi-quantum well avalanche photodiodes fabricated by MBE is investigated via accelerated life tests. Dark current and breakdown voltage were the parameters monitored. The activation energy of the degradation mechanism and median device lifetime were determined. Device failure probability as a function of time was computed using the lognormal model. Analysis...
New failure mechanisms induced by hot-electrons in AlGaAs/InGaAs pseudomorphic HEMTs have been identified by means of accelerated testing of commercial devices from four different suppliers. Different degradation modes have been observed, depending on the device type, namely: (a) recoverable increase of I/sub D/ and |V/sub T/|, which has been attributed to recombination of electrons trapped under...
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