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We present a study of Ti implanted Si layers with doses in the 1013-1016 cm-2 range that have been subsequently Pulsed-Laser Melted (PLM) at 0.8 J/cm-2. Recently, we have associated a rectifying electrical behavior found between the Ti implanted Si layers and the underlying substrate to the Intermediate Band (IB) formation in the Ti implanted Si layers with the highest doses. We analyze by means of...
The aim of this study is to optimize a low cost phosphorus diffusion process suitable for pn junction formation on extremely thin (<;100um) c-Si solar cells. The deposition of the doping layer has been carried out by spray coating of commercial and non-commercial precursors. There have been monitored sheet resistance, effective lifetime and oxygen content in the prepared emitters.
This paper reports on the preparation of nano-structured of MgxZn1-xO thin films by sol-gel spin coating method which will be used as a template layer to grow carbon nanotubes. The MgxZn1-xO films were deposited on Pt/Si (100) substrates. In this work, we focused on the effect of sol aging and Mg content on the film structure and resistivity. Sols with Mg content of x = 0.1, 0.3 and 0.5 were subjected...
Having known the fact that Silicon (Si) costs about 50% of the overall production costs of a crystalline Si (c-Si) PV module, an obvious alternative for cost reduction is to go for a thinner c-Si, in the order of less than 50μm. But, the major drawback of the thin film c-Si solar cell in this range is its relatively low efficiency compared to its bulk (300μm) c-Si counterpart. This is due to the fact...
An analytical model for high voltage Thin-film Silicon-On-Insulator (TSOI) lateral devices is proposed in this paper. A new Reduced SURface Field (RESURF) criterion is obtained for TSOI lateral devices with a lateral linear doping in the drift region. The optimum drift doping profile for TSOI lateral devices can be obtained from the new RESURF criterion. The analytical results are in good agreement...
This work presents the properties of nanocrystalline SiC(nc-SiC) films prepared by plasma enhanced chemical vapour deposition. A p-type silicon wafer with resistivity 2-7 Ωcm and (100) orientation was used as the substrate for the nc-SiC:H films. The concentration of species in the SiC films was determined by RBS and ERD. Chemical compositions were analyzed by IR spectroscopy. Film morphology was...
In0.53Ga0.47As has become a material of interest for the continuation of Moore's Law because of its high bulk electron mobility compared to Si. One problem associated with small effective-mass semiconductors such as InGaAs is the density-of-states bottleneck, or the loss of gate-capacitance due to the low density-of-states in the conduction band. The delta-doping profile is one way to reduce the effective...
Multi-layered Al:ZnO thin films, with wurtzite - type structure and thickness up to 120 nm, as determined by x-ray diffraction and HRTEM, were grown on Si-SiO2 and glass substrates by the sol-gel method. Fluorescence spectroscopy measurements show that 0.5 at.% Al doping determines a blue shift of the emission band observed at 387nm in the undoped material. The room temperature conductivity increases...
Applicability of SACVD for doping of 3-D structures was assessed on both flat substrates as well as patterned structures focusing on the optimization of dopant profile within the SACVD film. Boron and phosphorous doped ultra-shallow junctions of 6 and 10 nm respectively are obtained with surface concentration in excess of 1E21 at/cc for this intrinsically conformal and damage-free technique.
Si-doped AlSb polycrystalline films were grown on silex by magnetron co-sputtering. The conducting type, Hall mobility and carrier concentration of the films were determined. The films appear to be p-type indicating Si is shown to be predominantly an acceptor in AlSb, and holes as dominant charge carriers. Scanning electronic microscope (SEM) shows that prepared film is uniform and compact. The conductivity...
Silicon thin film with nanohole array decorated surface is systematically studied via simulation for solar energy harvesting and compared with nanopillar array textured one. It is found that nanohole array structures can significantly improve the light absorption of the silicon thin film with optimized structural dimensions. Moreover, for the same thickness and optimized structure dimensions, the...
The purpose of this paper is to study the heavily boron-doped effect on the etch rates of boron-doped <;111> single-crystal silicon in different TMAH solutions. The boron atoms were heavily doped in <;111> single-crystal silicon by using diffusion process. We change the pre-deposition time and annealing time of diffusion process to form different concentration distributions. The samples...
Polycrystalline germanium (poly-Ge) grown on amorphous Si (a-Si) by ultra-high vacuum chemical vapor deposition (UHVCVD) over oxide barriers at low temperatures (Tles450degC) exhibits a larger grain size and lower defect density than the as-grown poly-Ge next to the oxide barriers. Poly-Ge as deposited at 450degC is p-type, but the introduction of PH3 during Ge deposition gives n-type poly-Ge with...
The microwave plasma enhanced chemical vapor deposition technique has been employed to grow polycrystalline diamond films on p-doped Si (100) substrates starting from highly diluted (1% CH4 in H2) gas mixtures. Coplanar interdigitated Cr/Au contacts have been thermally evaporated on two samples about 8 mum thick having different grain size. Dark current-voltage (I-V) measurements and impedance characterization...
Radial pn junction wire array solar cells have a potential to reduce the material cost of PV devices. We present the fabrication process of Si nano-wire array solar cells using low temperature plasma processing techniques. Process schemes for fabrication of two new types of solar cells with radial p-n junction formed with low temperature thin film deposition process are described. In addition to the...
This paper reports experimental results and numerical simulations for the impact of n-type interface on the performance of n-i-p type a-Si based solar cells deposited on stainless steel (SS) foil substrate. Here the n-type interface includes the interfaces of n-a-Si layer with i-a-Si layer and SS substrate. The obtained results show that 1) the extra interfacial layer between SS and the n-a-Si layer...
In this paper, we present the electrical properties evolution, following a dry thermal oxidation, of LPCVD polycrystalline silicon layers. The polysilicon thin films deposited on monosilicon substrates, at different temperatures (Td = 520 to 605degC), are highly in situ boron doped (2times1020 cm-3). The thermal oxidation treatment was carried out under dry oxygen atmosphere at the temperatures Tox...
Polysilicon nanofilms (less than 100 nm in thickness) have been proved in our previous experiments to offer large gauge factor (>30) and stable temperature characteristics. This promotes their applications in piezoresistive sensing devices. In order to improve the resistance matching of sensors after fabrication, it is necessary to perform resistor trimming. The electrical trimming is an effective...
A global continuous channel potential solution is proposed for the modeling of symmetric double-gate (DG) MOSFETs. To obtain the channel potential, from accumulation to inversion regions, 1-D Poissonpsilas equation in the silicon film of the DG MOSFETs is solved physically. The extensive comparisons between the calculated results and numerical simulations illustrate that the analytical solution is...
The current density-voltage (J-V) and capacitance voltage (C-V) characteristics of a p-n heterojunction device are studied. The device was fabricated by depositing phosphorus (P) doped carbon (C) thin film on p-type silicon (Si) substrate by pulsed laser deposition (PLD) technique at room temperature. Camphor (C10H16O), a natural source, was used as the starting precursor for the carbon layer of the...
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