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The recently emerging SiC devices provide a promising solution to improve power converter efficiency and power density. However the expensive cost limited the widely use of SiC device. The parallel connection of SiC MOSFET and Si IGBT is introduced in this paper to utilize the advantage of this two different kinds of devices and proposed corresponding switching strategies. The switching loss and current...
One of the major challenge with CMOS circuits with 22nm technology & beyond is to buried the issues of increasing in power dissipation of the circuits due to higher order effects & leakage current. The traditional transistor or MOSFET require significant amount of power so the circuit present on the chip will require a large amount of power due to presence of many transistors in the circuit...
A superjunction MOSFET (SJ-MOSFET) with a new fully close-packed hexagonal pattern for its superjunction (SJ) region is proposed. According to TCAD simulation, the proposed device can accommodate highly doped n-pillars with no significant degradation of its blocking voltage (BV), where its conventional counterpart, a SJ-MOSFET with a stripe-patterned SJ region is incapable of. In comparison with the...
A three-port DC/DC converter (TPC) having DC48V and DC12V ports, and an isolated DC port is designed and analyzed. The newly designed TPC integrates a non-isolated bi-directional DC-DC (NBC) converter and an isolated dual-active-bridge (DAB) converter using a coupling inductor technique, and DC power can be delivered multi-directionally among three DC ports. In the present study, a loss estimation...
As one of the most attractive post-silicon power semiconductor devices, SiC bipolar junction transistor (BJT) has been studied intensively and commercialized in the past few years. However, SiC BJT has not been widely accepted in the market because of high driver loss in the on-state, which is induced by a relatively large constant base current in order to ensure its fully turning on. In this paper,...
This paper presents an innovative surface mount bottom power ground device consisting of a dual gate driver and two optimized MOSFETs in a single package to produce a high efficiency DC-DC synchronous buck power stage. The paper illustrates the structure of the new technology, novel assembly method, characterization of device, and explains the benefits of packaging technology in a DC-DC converter...
Silicon carbide (SiC) MOSFETs are about to replace conventional silicon-based power switches. Due to their blocking, thermal, conducting and switching characteristics they represent a better solution for high power and high voltage applications, such as automotive motor drives in hybrid electric vehicle. Operating conditions and advantages of using SiC MOSFET in a typical automotive motor drive application...
Two new MOSFET structures are candidates for sub-20nm IC technologies according to International Technology Roadmap for Semiconductors. FinFET and UTB-SOI transistors are poised to replace today's MOSFETs and will provide much needed relief to ICs from their power and device variation predicaments.
Logic CMOS technology roadmap for dasia22 nm and beyondpsila is described with ITRS (International Technology Roadmap for Semiconductor) as a reference. In the ITRS 2008 Update published just recently, there has been some significant change in the trend of the gate length. The predicted trend has been amended to be less aggressive from the ITRS 2008 Update, resulting in the delay in the gate-length...
MOSFET scaling has served our industry well for several decades by providing significant improvements in performance, density and power, but traditional MOSFET scaling has run into hard roadblocks. Interconnect and patterning technologies have also run into significant limitations when trying to follow traditional scaling methods. The past few years have seen the introduction of new materials and...
The pseudo-MOS transistor (Psi-MOSFET) is a quick technique for monitoring SOI wafers. Based on Poisson numerical simulations, we derive updated models for the characterization of ultrathin films, accounting for the density of traps of passivated and nonpassivated surfaces. These analytical models match the experimental results and are useful for accurate parameter extraction.
This presentation will first summarize some of the most recent silicon innovations made for advanced CMOS transistors in the nanotechnology era for high-speed and energy-efficient VLSI digital applications. Through these Si nanotechnologies, it is expected that the CMOS scaling and improved performance trends will extend and continue well into the next decade. In addition, there has been good progress...
Bulk-Si ICs cannot operate over 150degC, due to the reverse bias leakage current of the p-n junction in MOSFETs or diode components. In this paper, we investigated a work function type temperature sensor on a SOI substrate, which generates voltage output by the work function difference and is superior to diode-type temperature sensors at high temperature. This SOI temperature sensor is operated up...
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