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A two-die stacked silicon module with TSV has been developed in this work. Thermal-mechanical analysis has been performed and TSV interconnect design is optimized. Multiple chips representing different functional circuits are assembled using flip chip interconnection methods. Silicon carrier is fabricated using via-first approach, the burrier copper via is exposed by special backgrinding process....
Thermo-mechanical modeling has been done in a true-symmetry three-dimensional geometry for copper-pillar flip-chip packages to find out package warpage, stress and bump joint strain energy during temperature cycling. Lead-free solder materials, SnAg and SnAgCu were used in the bump joint at the substrate side. The strain energy due to both time-independent plastic and creep had been considered during...
The impact of Chip-Package Interaction (CPI) which is caused by the mismatch in the coefficient of thermal expansion (CTE) between substrate and chip in a Flip Chip Ball Grid Array (FCBGA) on the mechanical reliability of Cu/Ultra low-k in a larger die was investigated using Finite Element Analysis (FEA). In order to associate the deformation and thermal stresses in FCBGA with those in the Cu/Ultra...
Nowadays, the demand for the printed wiring board (PWB) of the environment harmony type is rising rapidly. We have developed a new halogen-free material with low coefficients of thermal expansion (CTE), which will be applied to the plastic packages such as FC-BGA and CSP. The original resin system and filler treatment technique named FICS (filler interphase control system) were applied to the material...
The low dielectric constant (low-K) material and copper (Cu) interconnection in chip enhance the electrical speed for microelectronic devices. The low-K materials generally show low mechanical strength, high coefficient of thermal expansion (CTE) and poor adhesion. Cu/low-K delamination becomes a failure cause during reliability test. Many papers have studied this failure and demonstrated the underfill...
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