The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
This paper focuses on the programming operation optimization of a HfO2-based Resistive RAM (RRAM) memory array for low power consumption application. We will show how the resistance window (RW) depends on the write/erase energy, and we will give directives to minimize the operating energy cost. In particular, the advantage of short pulse over low current operation is demonstrated. We also link the...
ReRAM (Resistive Random Access Memory) is an emerging non-volatile memory technology that exhibits high cell density and low standby power. ReRAM crossbars, while having the smallest 4F2 cell size, suffer from large sneak leakage, which not only wastes dynamic energy but also degrades system performance significantly. In this paper, we propose V-ReRAM, a novel ReRAM crossbar design based on 1TnR cell...
Spin-transfer torque magnetic random access memory (STT-RAM) technology has emerged as a potential replacement of SRAM in cache design, especially for building large-scale and energy-efficient last level caches. Compared with singlelevel cell (SLC), multi-level cell (MLC) STT-RAM is expected to double cache capacity and increase system performance. However, the two-step read/write access schemes incur...
Dynamic Random Access Memory (DRAM) has been prevalent over the past few decades as main memory component. The demand of higher memory capacity is increasing continuously, while scaling of DRAM is reaching its boundaries. As we scale DRAM to smaller feature size, difficulties in fabrication, leakage power, and energy consumption become significant. Therefore, memory technologies, which have better...
Normally-off computing (NoC) is one of promising techniques that benefits microsystems with long sleep time. Because NoC can turn off power to achieve zero power consumption and can activate microsystems instantly. This study proposes a novel resistive random access memory (ReRAM)-based nonvolatile flip-flop (NVFF), fabricated using 90-nm CMOS technology and the ReRAM process of the Industrial Technology...
Modern computing machines are increasingly characterized by large scale parallelism in hardware (such as GPGPUs) and advent of large scale and innovative memory blocks. Parallelism enables expanded performance tradeoffs whereas memories enable reuse of computational work. To be effective, however, one needs to ensure energy efficiency with minimal reuse overheads. In this paper, we describe a resistive...
Spin-Transfer Torque Random Access Memory (STT-RAM) has been identified as an advantageous candidate for on-chip memory technology due to its high density and ultra low leakage power. Recent research progress in Magnetic Tunneling Junction (MTJ) devices has developed Multi-Level Cell (MLC) STT-RAM to further enhance cell density. To correct the write disturbance in MLC strategy, data stored in the...
With attractive advantages like high density and low leakage, Spin-Transfer Torque Magnetoresistive RAM (STT-MRAM) is a promising candidate to replace conventional SRAM technology to build large-size and low-power on-chip caches. Multi-level cell (MLC) STT-MRAM, with a higher density, further improves the on-chip cache capacity for chip multiprocessor (CMP) systems. However, the notorious high write...
Memory is an integral and important component of both general-purpose and embedded systems. It is widely acknowledged that energy of the memory structure is a major contributor in overall system energy. Recent advances with emerging non-volatile memory (NVM) technologies can potentially alleviate the issue of memory leakage power. However, they introduce new challenges and opportunities for dynamic...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.