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This work analyzes the self-rectifying behavior and the response under identical pulses of tri-layer RRAMs in crossbar arrays to implement the synapse function. Our finding shows that tri-layer RRAMs allow to achieve a stable Low Resistance State (LRS) without complete oxide breakdown. The first RRAM layer works as tunneling barrier allowing to achieve on-state half-bias nonlinearity. Thanks to LRS...
This paper focuses on the programming operation optimization of a HfO2-based Resistive RAM (RRAM) memory array for low power consumption application. We will show how the resistance window (RW) depends on the write/erase energy, and we will give directives to minimize the operating energy cost. In particular, the advantage of short pulse over low current operation is demonstrated. We also link the...
We present a novel study on the impact of the forming stage on RRAM reliability on multi-Kbit array. First we show how the forming stage dictates the CF radius and impacts on the Vset distribution even after long cycling. Then we show how the low frequency noise, and in particular the Random Telegraph Noise (RTN), is directly linked to the forming stage. We find that as the forming current decreases,...
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